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Infineon Technologies IRLR8113TR
- Part No.:
- IRLR8113TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR8113TR.pdf
- Description:
- MOSFET N-CH 30V 94A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,488
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Product details
Overview
IRLR8113TR from Infineon Technologies is a 30V, 6.0mΩ (max) N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, optimized for high-frequency synchronous buck converters and isolated DC-DC converters with synchronous rectification. It delivers 94A continuous drain current at TC = 25°C, features ultra-low gate impedance (Qg = 22nC typ), and supports robust avalanche operation (EAS = 700mJ).
For engineers reviewing the IRLR8113TR datasheet, IRLR8113TR pinout, IRLR8113TR application, or IRLR8113TR equivalent, key selection criteria include RDS(on) at 4.5V VGS, Qgd/Qgs1 ratio for dv/dt immunity, body diode reverse recovery charge (Qrr = 30–45nC), and thermal resistance (RθJC = 1.69°C/W) in high-power-density server and telecom power supplies.
Technical Context
This MOSFET employs planar silicon HEXFET architecture with fully characterized unclamped inductive switching (UIS) capability and temperature-stable threshold voltage (VGS(th) = 1.35–2.25V, ΔVGS(th)/ΔTJ = −5.6mV/°C). Its low output charge (Qoss = 14nC) and reverse transfer capacitance (Crss = 260pF) minimize switching losses in hard-switched topologies.
The device integrates an intrinsic body diode with fast reverse recovery (trr = 33–49ns, Qrr = 30–45nC) and low forward voltage (VSD ≤ 1.0V at IS = 12A), enabling efficient synchronous rectification without external Schottky diodes in 48V-to-12V or 12V-to-1V DC-DC stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum blocking voltage compatible with 24V input rails and transient overvoltage margins in telecom and industrial DC-DC. |
| RDS(on) max @ VGS = 4.5V | 6.0mΩ - Enables <1W conduction loss at 40A RMS in high-current CPU core VRMs. |
| Qg typ | 22nC - Supports >1MHz switching with moderate gate driver strength (e.g., IR2110 or LM5113). |
| Qrr max | 45nC - Limits shoot-through risk and EMI during body-diode commutation in synchronous rectifiers. |
| RθJC | 1.69°C/W - Allows direct heatsink mounting to sustain 94A continuous current at TC ≤ 100°C. |
| EAS | 700mJ - Withstands single-pulse inductive energy in hot-swap and load-dump events without failure. |
| trr | 49ns - Ensures clean zero-voltage switching transitions in resonant LLC and phase-shifted full-bridge topologies. |
Pinout & Package
D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal requiring <22nC charge for full enhancement; sensitive to dv/dt-induced turn-on due to Qgd coupling. |
| Pin 2 (D) | Drain | Main high-side switching node; electrically and thermally connected to exposed copper pad on bottom of package. |
| Pin 3 (S) | Source | Power return path and gate reference; forms common source node in synchronous FET configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5V VGS | Enables direct drive from 5V PWM controllers (e.g., UCC2897A) without level-shifting, reducing BOM count. |
| Fully characterized avalanche rating | Guarantees survivability under unclamped inductive switching in point-of-load converters during fault conditions. |
| Low Qgd/Qgs1 ratio | Minimizes dv/dt-induced gate voltage spikes, preventing unintended turn-on when used as synchronous rectifier. |
| Optimized body diode recovery | Reduces cross-conduction losses and EMI in high-frequency synchronous rectification without snubbers. |
Applications
| Server CPU Voltage Regulator | Telecom 48V-to-12V Isolated DC-DC |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 1–2V/100A+ to modern x86 processors. IC Role / Device Role / Timing Role: Low-side synchronous FET handling continuous 94A conduction and rapid 1MHz switching transitions. Use Value: 6.0mΩ RDS(on) at 4.5V reduces conduction loss by >30% versus 10mΩ alternatives, improving VR efficiency above 90% at full load. | Use Scenario: Secondary-side synchronous rectifier in forward or LLC converter delivering 12V/20A from 48V bus. IC Role / Device Role / Timing Role: Fast-recovery body diode replaces Schottky rectifier; gate driven by transformer-coupled or active clamp signal. Use Value: Qrr = 45nC and trr = 49ns limit reverse recovery energy dissipation, enabling >95% secondary-side efficiency at 500kHz. |
| Industrial PLC Power Module | Automotive ADAS Domain Controller Supply |
Use Scenario: Input-stage 24V-to-5V/3.3V buck converter powering I/O and communication ICs in harsh environments. IC Role / Device Role / Timing Role: Primary switching FET operating at 300–500kHz with guaranteed 175°C junction temperature rating. Use Value: RθJC = 1.69°C/W allows direct heatsink attachment, sustaining 60A continuous current without derating in sealed enclosures. | Use Scenario: Compact 12V-to-1.2V VRM for radar SoC in automotive domain controller with ASIL-B functional safety requirements. IC Role / Device Role / Timing Role: High-efficiency low-side switch in multiphase topology with integrated current sensing and thermal monitoring. Use Value: EAS = 700mJ ensures robustness against load dump transients up to ISO 7637-2 Pulse 5a, eliminating need for external TVS clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR8726PBF | RDS(on) = 4.0mΩ @ 10V (vs. 4.8mΩ), Qg = 24nC (vs. 22nC), same D-Pak package | Better conduction loss at 10V gate drive; slightly higher gate charge increases driver loss at 4.5V | Prefer when gate drive ≥10V available; avoid if using 5V logic-level controllers |
| STL110N3LLH6 | RDS(on) = 3.3mΩ @ 10V, Qg = 32nC, TSD = −55°C to +175°C (same), but in PowerFLAT 5x6 package | Lower RDS(on) but higher Qg and different footprint; no exposed drain pad for thermal relief | Choose only if board redesign accommodates PowerFLAT layout and thermal vias are added |
Compared with IRLR8113TR, IRLR8726PBF trades marginally lower RDS(on) for increased Qg sensitivity to gate drive voltage, while STL110N3LLH6 offers superior conduction performance at the cost of gate drive overhead and incompatible thermal mounting-making IRLR8113TR optimal for 4.5V-driven, space-constrained synchronous rectifier designs.
Availability
IRLR8113TR is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom isolated DC-DC converters, industrial PLC power modules, and automotive ADAS domain controller supplies requiring stable component supply across extended production lifecycles.
Supply support for IRLR8113TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The HEXFET Power MOSFET product line targets high-efficiency, high-frequency power conversion in computing, telecom, and industrial applications-designed specifically for synchronous rectification, DC-DC conversion, and motor control where low RDS(on), fast switching, and ruggedness are critical.
FAQ
Is IRLR8113TR suitable for 5V gate drive in synchronous buck converters?
Yes. IRLR8113TR is specified for RDS(on) ≤6.0mΩ at VGS = 4.5V and delivers 94A ID at TC = 25°C under that condition. Its gate threshold voltage (1.35–2.25V) and low Qg (22nC) ensure full enhancement with standard 5V PWM controllers, making it ideal for logic-level synchronous FET applications without gate drivers.
What is the maximum recommended case temperature for continuous operation?
The absolute maximum case temperature is 175°C, but continuous operation should be limited to TC ≤ 100°C to maintain 94A ID rating and ensure long-term reliability. Derating begins above 25°C at 0.59W/°C, and thermal design must account for RθJC = 1.69°C/W with adequate PCB copper area and thermal vias beneath the exposed drain pad.
Does IRLR8113TR have avalanche energy rating, and how is it tested?
Yes. IRLR8113TR is fully characterized for unclamped inductive switching (UIS) with EAS = 700mJ (single-pulse, TJ = 25°C). Testing follows JEDEC JESD24-11 using clamped inductive load circuits per Fig. 12a–c in the datasheet, verifying ruggedness under worst-case short-circuit or overload conditions in DC-DC power stages.
Can IRLR8113TR replace IRLU8113 in existing designs?
Yes, with mechanical adaptation. Both share identical electrical specs and die, but IRLR8113 uses D-Pak (TO-252) while IRLU8113 uses I-Pak (TO-251). The D-Pak's larger exposed drain pad improves thermal performance, and PCB layout must be updated to accommodate the wider lead spacing and different mounting hole pattern-no circuit changes are required.
IRLR8113TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 94A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2920 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 89W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR8113TR FAQ
1.How can I place an order for IRLR8113TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR8113TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR8113TR reliable?
The price and inventory of IRLR8113TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8113TR is usually 5 days.
3.What payment methods are accepted for IRLR8113TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8113TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR8113TR?
IRLR8113TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR8113TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR8113TR?
For technical support, including IRLR8113TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8113TR requirements.
6.How does Aetrix verify that IRLR8113TR is sourced from the original manufacturer or authorized distributors?
All IRLR8113TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8113TR meets industry standards.
7.What is the process for return or replacement of IRLR8113TR?
All IRLR8113TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8113TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR8113TR part is unused and in its original packaging.
Return procedure for IRLR8113TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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