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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR8113TRLPBF

Name: IRLR8113TRLPBF
Brand: Infineon Technologies
SKU: IRLR8113TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR8113TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR8113TRLPBF.pdf

Description:: MOSFET N-CH 30V 94A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR8113TRLPBF from Infineon Technologies is an N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, rated for 30V V_DS, 4.8 mΩ R_DS(on) at V_GS = 4.5V, and 12A continuous drain current at T_C = 25°C. It features ultra-low gate charge (22 nC), fully characterized avalanche capability (700 mJ E_AS), and optimized for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IRLR8113TRLPBF datasheet, IRLR8113TRLPBF pinout, IRLR8113TRLPBF application, or IRLR8113TRLPBF equivalent, key selection criteria include R_DS(on) at 4.5V drive, Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 30–45 nC), and thermal resistance R_θJC = 1.69 °C/W for PCB-mounted thermal design.

Technical Context

This HEXFET device uses planar stripe cell structure with low gate-to-drain charge (Q_gd = 6.8 nC) and low output charge (Q_oss = 14 nC), enabling fast switching in hard-switched synchronous buck topologies. Its gate threshold voltage (V_GS(th) = 1.35–2.25 V) ensures robust turn-on with 3.3V/4.5V logic-level drivers.

The integrated body diode exhibits t_rr = 33–49 ns and Q_rr = 30–45 nC under dI/dt = 100 A/µs, supporting efficient synchronous rectification without external Schottky replacement in telecom and processor VRMs. Junction-to-case thermal resistance of 1.69 °C/W enables direct heatsinking via the exposed drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage in buck high-side or synchronous rectifier low-side position
R_DS(on) @ 4.5V	4.8 mΩ (max 6.0 mΩ) - Enables <1.5 W conduction loss at 12A in 12V input VRM stage
Q_g	22 nC (max 32 nC) - Supports >1 MHz switching with moderate gate driver strength (e.g., IR1167)
Q_gd	6.8 nC - Low ratio to Q_gs1 (6.1 nC) reduces risk of C_dv/dt induced shoot-through
E_AS	700 mJ - Withstands single-pulse inductive energy in unclamped flyback or synchronous FET failure modes
R_θJC	1.69 °C/W - Allows 40W power dissipation with ≤68°C case-to-junction rise at 25°C ambient
t_rr	33–49 ns - Limits reverse recovery loss in 300–600 kHz telecom isolated DC-DC converters

Pinout & Package

D-Pak (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection. Standard 3-pin surface-mount configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Accepts 3.3V/4.5V logic-level drive; requires <1 µs turn-on delay (t_d(on) = 9.2 ns) for MHz operation
Drain (D)	High-side switch node / Output return	Exposed metal tab electrically connected to drain; must be isolated from heatsink unless referenced to same potential
Source (S)	Reference node / Current return path	Connected to power ground or synchronous rectifier output rail; carries full load current and body diode reverse recovery charge

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	Enables use with 3.3V/4.5V PWM controllers (e.g., ISL6208, UCC27201) without level-shifting
Fully characterized avalanche rating	Supports robustness validation per JEDEC JESD22-A114 without derating in clamped inductive loads
Low Q_gd/Q_gs1 ratio	Reduces susceptibility to false turn-on during high dV/dt transitions in synchronous buck nodes
Optimized body diode Q_rr	Lowers cross-conduction loss and EMI in synchronous rectifier applications versus standard MOSFETs
Lead-free D-Pak packaging	Complies with RoHS 2011/65/EU and IPC/JEDEC J-STD-020D reflow profile for Pb-free assembly

Applications

Server CPU Voltage Regulator

Telecom Isolated DC-DC

Use Scenario: High-current, multi-phase 12V→0.8V buck converter supplying AMD/Intel processors.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in low-side position, switching at 300–600 kHz with 4.5V gate drive.

Use Value: 4.8 mΩ R_DS(on) at 4.5V reduces conduction loss by 35% vs. legacy 10 mΩ parts, improving VR efficiency by ≥1.2% at 100A load.

Use Scenario: Secondary-side synchronous rectifier in 48V→12V isolated forward converter for base station power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating with zero-voltage switching (ZVS) edge control.

Use Value: Q_rr = 30–45 nC and t_rr = 33–49 ns minimize reverse recovery loss and associated EMI, enabling compliance with EN55022 Class B.

Industrial Motor Drive Inverter

Automotive ADAS Power Supply

Use Scenario: Half-bridge high-frequency inverter driving 24V BLDC motor in factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase bridge, driven by isolated gate driver (e.g., Si823Hx).

Use Value: 700 mJ E_AS rating withstands inductive kickback during fault conditions without snubber, simplifying protection circuitry.

Use Scenario: Compact 12V→3.3V/5V buck converter powering radar sensor SoCs in automotive ADAS modules.

IC Role / Device Role / Timing Role: Primary power switch in high-efficiency, space-constrained point-of-load regulator.

Use Value: D-Pak footprint and R_θJC = 1.69 °C/W allow direct mounting to metal-core PCB, eliminating discrete heatsink while maintaining T_J < 125°C at 8A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8721PbF	R_DS(on) = 3.3 mΩ @ 4.5V, Q_g = 25 nC, V_DS = 30V, same D-Pak	Lower R_DS(on) improves conduction loss but higher Q_g increases switching loss above 500 kHz	Select when peak efficiency at medium load dominates; verify gate driver capability for 25 nC charge
SI2308DS-T1-GE3	R_DS(on) = 28 mΩ @ 4.5V, Q_g = 5.2 nC, SOT-23 package, V_DS = 30V	Smaller footprint but 5× higher R_DS(on); limited to ≤3A continuous current	Select only for space-constrained, low-power (<5W) auxiliary rails where thermal margin permits

Compared with IRLR8113TRLPBF, IRLR8721PbF offers lower conduction loss but demands stronger gate drive, while SI2308DS-T1-GE3 trades performance for miniaturization-neither matches its balanced 12A/4.5V/22nC specification set in D-Pak.

Availability

IRLR8113TRLPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom isolated DC-DC converters, and industrial motor drive inverters requiring stable component supply across extended production lifecycles.

Supply support for IRLR8113TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The HEXFET® Power MOSFET product line delivers logic-level, low-R_DS(on), and avalanche-rated devices specifically engineered for high-efficiency DC-DC conversion in computing, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR8113TRLPBF supports 30 A continuous drain current at T_C = 25°C, derating linearly to 13 A at T_C = 100°C per the Absolute Maximum Ratings table. This reflects thermal limitation of the D-Pak package, not silicon capability, and assumes proper PCB copper area (≥1 in² 2 oz Cu) for heat spreading.

Does this MOSFET require a gate resistor for stability in high-frequency operation?

Yes-a 2.2–10 Ω gate resistor is recommended between driver output and gate terminal to dampen ringing caused by L_g–C_iss resonance. The device's C_iss = 2920 pF and low gate impedance make it susceptible to oscillation without controlled gate loop inductance, especially above 500 kHz.

Can IRLR8113TRLPBF replace IRLR8113PbF in existing designs?

Yes-IRLR8113TRLPBF is the tape-and-reel packaged version of IRLR8113PbF, sharing identical electrical specifications, thermal characteristics, and D-Pak mechanical dimensions. The "T" suffix denotes tape-and-reel delivery; no layout or schematic changes are required for drop-in replacement.

Is the body diode suitable for freewheeling in non-synchronous applications?

Yes-the intrinsic body diode has V_SD = 1.0 V max at 12A and t_rr = 33–49 ns, making it usable for freewheeling in low-frequency (<100 kHz) non-synchronous buck or flyback converters. However, its Q_rr is higher than discrete Schottky diodes, so efficiency loss increases significantly above 200 kHz.

IRLR8113TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 94A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2920 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 89W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR8113TRLPBF FAQ

1.How can I place an order for IRLR8113TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8113TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8113TRLPBF reliable?

The price and inventory of IRLR8113TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8113TRLPBF is usually 5 days.

3.What payment methods are accepted for IRLR8113TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8113TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR8113TRLPBF?

IRLR8113TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8113TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8113TRLPBF?

For technical support, including IRLR8113TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8113TRLPBF requirements.

6.How does Aetrix verify that IRLR8113TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRLR8113TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8113TRLPBF meets industry standards.

7.What is the process for return or replacement of IRLR8113TRLPBF?

All IRLR8113TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8113TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8113TRLPBF part is unused and in its original packaging.

Return procedure for IRLR8113TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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