Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR8113TRPBF

Name: IRLR8113TRPBF
Brand: Infineon Technologies
SKU: IRLR8113TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLR8113TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR8113TRPBF.pdf

Description:: MOSFET N-CH 30V 94A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,471

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLR8113TRPBF from Infineon Technologies is a 30V, 12A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, featuring 4.8 mΩ R_DS(on) at V_GS = 4.5V, 22 nC total gate charge, and fully characterized avalanche capability. It serves as a high-efficiency synchronous rectifier or control FET in high-frequency DC-DC converters for CPU core power delivery.

For engineers reviewing the IRLR8113TRPBF datasheet, IRLR8113TRPBF pinout, IRLR8113TRPBF application, or IRLR8113TRPBF equivalent, key selection criteria include low R_DS(on) at 4.5V drive, ultra-low gate impedance, Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode reverse recovery performance (Q_rr = 30–45 nC), and thermal resistance R_θJC = 1.69°C/W.

Technical Context

This MOSFET employs planar silicon HEXFET architecture optimized for fast switching in synchronous buck topologies. Its gate threshold voltage (1.35–2.25 V) enables robust 4.5V logic-level drive, while the low Q_gd (6.8 nC) and Q_gd/Q_gs1 ratio minimize susceptibility to C_dv/dt turn-on during high-dV/dt node transitions.

The device integrates a monolithic body diode with t_rr = 33–49 ns and Q_rr = 30–45 nC, enabling efficient synchronous rectification without external Schottky diodes. Avalanche energy rating (E_AS = 700 mJ at T_J = 25°C) supports unclamped inductive switching reliability in telecom and industrial isolated DC-DC designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24V input rails and transient margin in telecom/industrial supplies.
R_DS(on) max @ 4.5V	6.0 mΩ - Enables <1W conduction loss at 12A RMS in high-current CPU VRMs.
Q_g	22 nC - Low gate drive energy reduces controller loading and improves efficiency at >500 kHz switching.
Q_gd	6.8 nC - Critical for minimizing Miller-induced shoot-through risk in synchronous FET position.
R_θJC	1.69 °C/W - Supports >70W power dissipation with modest heatsinking in D-Pak PCB mount.
t_rr	33–49 ns - Limits reverse recovery losses and EMI in hard-switched synchronous rectifiers.
E_AS	700 mJ - Rated single-pulse avalanche energy ensures robustness under load dump or startup faults.

Pinout & Package

IRLR8113TRPBF uses the surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package measures 6.73 × 6.22 × 2.39 mm and is lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 0–20V logic-level drive; low input capacitance (C_iss = 2920 pF) minimizes driver stress.
Pin 2 (D)	Drain	Main power output node; electrically and thermally connected to exposed copper pad; ties to switching node in buck converter.
Pin 3 (S)	Source	Power return path and reference for gate drive; connects to low-side shunt or controller ground plane.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	4.8 mΩ typ. - Eliminates need for gate boosters in 5V/3.3V controller systems.
Low Q_gd/Q_gs1 ratio	6.8 / 6.1 ≈ 1.12 - Reduces risk of parasitic turn-on during high dV/dt transitions in synchronous FET role.
Characterized avalanche capability	E_AS = 700 mJ (T_J = 25°C) - Validates ruggedness for unclamped inductive switching without external snubbers.
Fast body diode recovery	Q_rr = 30–45 nC - Low stored charge minimizes cross-conduction loss and EMI in synchronous rectification.
Thermally enhanced D-Pak	R_θJC = 1.69°C/W - Enables direct thermal coupling to PCB copper pour for >70W operation without heatsink.

Applications

Server CPU Voltage Regulator

Telecom Isolated DC-DC

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5V to x86 or ARM server processors at up to 200A per rail.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating in continuous conduction mode at 300–1000 kHz switching frequency.

Use Value: 4.8 mΩ R_DS(on) at 4.5V enables >95% efficiency at 12A per phase while eliminating Schottky losses and thermal derating.

Use Scenario: Secondary-side synchronous rectifier in 48V-to-12V isolated forward or LLC converter for 5G base station power modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with body diode conducting during dead time and MOSFET conducting during active period.

Use Value: 33–49 ns t_rr and 30–45 nC Q_rr reduce reverse recovery spikes and improve light-load efficiency over discrete diodes.

Industrial PLC Power Supply

Automotive ADAS Domain Controller

Use Scenario: Input-stage hot-swap or load switch in 24V industrial PLC backplane power distribution with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by microcontroller GPIO with integrated current sensing.

Use Value: Fully characterized avalanche rating (700 mJ) withstands inductive kickback from solenoid/relay loads without external clamping.

Use Scenario: Core power delivery for radar or camera domain controllers requiring AEC-Q101-compliant components and extended temperature operation.

IC Role / Device Role / Timing Role: Control FET in compact 5V/3.3V point-of-load regulator supporting ASIL-B functional safety requirements.

Use Value: Stable R_DS(on) over -55°C to +175°C (normalized to 1.5× at 150°C) ensures predictable conduction loss across automotive ambient range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8721PbF	R_DS(on) = 3.3 mΩ @ 4.5V (lower), Q_g = 27 nC (higher), same D-Pak package	Better conduction loss but higher switching loss; requires stronger gate driver	Prefer when conduction loss dominates (e.g., high-duty-cycle, low-freq operation)
SI2308DS-T1-GE3	R_DS(on) = 28 mΩ @ 4.5V (higher), Q_g = 5.5 nC (much lower), SOT-23 package, 20V rating	Lower voltage rating and higher R_DS(on); unsuitable for 24V input or high-current apps	Only suitable for low-power (<3A), low-voltage (<12V) portable or sensor supply rails

Compared with IRLR8113TRPBF, IRLR8721PbF trades higher gate charge for significantly lower on-resistance, making it better for conduction-limited designs, while SI2308DS-T1-GE3 offers minimal gate drive demand but lacks the voltage rating and current capacity for server or telecom use cases.

Availability

IRLR8113TRPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom isolated DC-DC converters, and industrial PLC power distribution requiring stable component supply and long-term lifecycle support.

Supply support for IRLR8113TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching in computing, telecom, and industrial power conversion systems.

FAQ

Is IRLR8113TRPBF suitable for 5V logic-level gate drive?

Yes. With a gate threshold voltage range of 1.35–2.25 V and guaranteed R_DS(on) ≤ 6.0 mΩ at V_GS = 4.5V, IRLR8113TRPBF is explicitly designed for direct drive from 5V or 3.3V microcontrollers and PWM controllers without level-shifting circuitry.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies 30 A continuous drain current at T_C = 25°C and 13 A at T_C = 100°C with V_GS = 10V. Derating follows the linear factor of 0.59 W/°C above 25°C, limiting practical continuous current to ~12A at T_C = 100°C under typical PCB thermal conditions.

Does IRLR8113TRPBF have an integrated body diode, and is it suitable for synchronous rectification?

Yes. It features a monolithic source-drain body diode with t_rr = 33–49 ns and Q_rr = 30–45 nC, fully characterized for synchronous rectification. Its low Q_gd/Q_gs1 ratio and fast recovery make it appropriate for secondary-side FETs in forward, flyback, and LLC converters.

How does the avalanche rating impact real-world reliability?

The rated single-pulse avalanche energy of 700 mJ (at T_J = 25°C) validates robustness against unclamped inductive transients-such as those from relay/solenoid turn-off or transformer leakage in isolated topologies-without requiring external avalanche-rated snubbers or TVS devices.

IRLR8113TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 94A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2920 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 89W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR8113TRPBF FAQ

1.How can I place an order for IRLR8113TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8113TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8113TRPBF reliable?

The price and inventory of IRLR8113TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8113TRPBF is usually 5 days.

3.What payment methods are accepted for IRLR8113TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8113TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR8113TRPBF?

IRLR8113TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8113TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8113TRPBF?

For technical support, including IRLR8113TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8113TRPBF requirements.

6.How does Aetrix verify that IRLR8113TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR8113TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8113TRPBF meets industry standards.

7.What is the process for return or replacement of IRLR8113TRPBF?

All IRLR8113TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8113TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8113TRPBF part is unused and in its original packaging.

Return procedure for IRLR8113TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.