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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR8259PBF

Name: IRLR8259PBF
Brand: Infineon Technologies
SKU: IRLR8259PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR8259PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR8259PBF.pdf

Description:: MOSFET N-CH 25V 57A DPAK

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Product details

Overview

IRLR8259PBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, rated for 25V V_DSS, 8.7mΩ R_DS(on) at V_GS = 4.5V, and 6.8nC total gate charge. It serves as a high-efficiency synchronous rectifier or main switch in high-frequency DC-DC converters for CPU core power and telecom systems.

For engineers reviewing the IRLR8259PBF datasheet, IRLR8259PBF pinout, IRLR8259PBF application, or IRLR8259PBF equivalent, key selection criteria include low R_DS(on) at 4.5V drive, ultra-low gate impedance (2.2–3.6Ω), fully characterized avalanche capability (67mJ E_AS), and RoHS-compliant lead-free construction.

Technical Context

This MOSFET employs planar silicon process with optimized cell geometry to achieve sub-10mΩ on-resistance at logic-level 4.5V gate drive-enabling direct interface with PWM controllers without level-shifting. Its gate charge profile (Q_gs2 = 1.1nC, Q_gd = 2.4nC) supports fast switching with minimal overlap loss in hard-switched topologies.

The device integrates a robust body diode with 17A continuous source current rating, 1.0V forward voltage at 17A, and 17–26ns reverse recovery time (Q_rr = 15–23nC), making it suitable for synchronous rectification where diode conduction and recovery behavior directly impact efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25V - Maximum drain-source blocking voltage; sets upper limit for input/output rail compatibility in 12V/19V systems.
R_DS(on) @ 4.5V	8.7mΩ max - Enables <1W conduction loss at 15A DC, critical for high-current CPU VRMs.
Q_g	6.8nC typ - Low gate charge reduces driver power demand and enables >1MHz switching in compact converters.
I_D @ T_C=25°C	24A - Continuous current rating under ideal heatsinking; defines PCB copper area and thermal pad design.
E_AS	67mJ - Single-pulse avalanche energy rating confirms ruggedness during inductive turn-off transients.
R_θJC	3.15°C/W - Junction-to-case thermal resistance enables accurate junction temperature estimation from measured case temp.

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; standard 3-pin layout optimized for high-current PCB routing and thermal dissipation.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Accepts 0–20V logic-level signal; low input capacitance (C_iss = 900pF) minimizes driver loading.
Drain (D)	High-side power terminal	Connected to exposed metal tab; carries full load current and requires thermal pad soldering to PCB ground plane.
Source (S)	Reference node	Serves as return path for channel current and gate drive reference; low-inductance layout essential for stable switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	Enables direct drive from 3.3V/5V microcontrollers and PWM ICs without gate drivers in low-voltage, high-current applications.
Fully characterized avalanche	Guarantees reliable operation under unclamped inductive switching stress up to 67mJ, eliminating need for external snubbers in many designs.
Low gate charge & impedance	Reduces switching losses and gate drive power consumption; supports efficient operation at >500kHz in synchronous buck stages.
Optimized body diode	17A continuous source current and 15–23nC Q_rr enable effective synchronous rectification with minimal reverse recovery loss.

Applications

Server CPU Voltage Regulator Modules

Telecom DC-DC Isolated Converters

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5V to modern x86 processors at up to 200A per rail.

IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position; switches at 300–1000kHz with precise dead-time control.

Use Value: 8.7mΩ R_DS(on) at 4.5V ensures <0.5W conduction loss per phase at 30A, directly improving VRM efficiency and thermal margin.

Use Scenario: Secondary-side synchronous rectifier in 48V-to-12V isolated flyback or forward converter for base station power supplies.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes; driven by transformer-coupled or auxiliary winding signals.

Use Value: 1.0V V_SD and 17ns t_rr reduce forward and recovery losses versus 40V Schottky, enabling >92% full-load efficiency.

Industrial Motor Control Gate Drivers

Automotive ADAS Power Management

Use Scenario: Half-bridge high-side switch in 24V BLDC motor gate driver IC auxiliary supply stage.

IC Role / Device Role / Timing Role: Main switch regulating 5V/3.3V bias rails for gate driver ICs and sensors; operates at 200–500kHz.

Use Value: 25V V_DSS and 67mJ E_AS withstand bus transients and inductive kickback during fault conditions.

Use Scenario: Power switch in 12V input DC-DC module for radar sensor or camera ECU requiring AEC-Q101 stress compliance.

IC Role / Device Role / Timing Role: Input protection and sequencing switch; controlled via MCU GPIO with soft-start functionality.

Use Value: Lead-free RoHS construction and -55°C to +175°C T_J rating support automotive qualification requirements without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8729PBF	25V V_DSS, 5.8mΩ R_DS(on) @ 4.5V, 10.2nC Q_g	Higher conduction efficiency but increased switching loss due to higher gate charge	Preferred when conduction loss dominates (e.g., high-Duty-cycle, low-freq operation); requires stronger gate driver.
SI7157DP-T1-GE3	30V V_DSS, 7.5mΩ R_DS(on) @ 4.5V, 7.5nC Q_g, PowerPAK SO-8 package	Higher voltage rating and different footprint; no exposed drain pad	Selected when board space is constrained and thermal pad attachment is impractical; lower avalanche rating (35mJ).

Compared with IRLR8259PBF, IRLR8729PBF offers lower R_DS(on) at cost of higher Q_g, while SI7157DP trades D-Pak thermal performance for smaller footprint and reduced voltage margin-requiring careful evaluation of system transient stress and thermal constraints.

Availability

IRLR8259PBF is available at Aetrix Electronics and suitable for server CPU voltage regulator modules, telecom DC-DC converters, industrial motor control gate drivers, and automotive ADAS power management systems requiring stable component supply and long-term lifecycle support.

Supply support for IRLR8259PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon MOSFET and IGBT technologies.

The IRLR series targets high-efficiency, high-frequency power conversion applications requiring logic-level gate drive and rugged avalanche performance-designed specifically for synchronous rectification and primary-side switching in compact DC-DC solutions.

FAQ

What is the maximum continuous drain current for IRLR8259PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 12.9A, derated from 24A at 25°C using the linear derating factor of 0.32W/°C and R_θJC = 3.15°C/W. This value assumes proper PCB copper area and thermal vias under the exposed drain pad.

Does IRLR8259PBF require a gate resistor for stability in high-frequency switching?

Yes-a gate resistor (typically 1–10Ω) is recommended to dampen ringing caused by PCB trace inductance interacting with C_iss (900pF) and gate driver output impedance. The device's 2.2–3.6Ω intrinsic gate resistance alone is insufficient to suppress oscillation above 500kHz without external damping.

Can IRLR8259PBF be used in avalanche mode for clamping applications?

Yes-it is fully characterized for single-pulse avalanche with E_AS = 67mJ at T_J = 25°C. However, repetitive avalanche is not rated; sustained operation in avalanche requires careful thermal analysis and pulse-width/duty-cycle limits per Fig. 12c in the datasheet.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

The integrated body diode delivers 1.0V forward drop at 17A and 17–26ns reverse recovery time-comparable to 40V Schottky diodes in conduction loss but with higher Q_rr. Its advantage lies in monolithic integration, eliminating parasitic inductance from discrete placement and enabling tighter timing control in synchronous gate drive schemes.

IRLR8259PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.7mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR8259PBF FAQ

1.How can I place an order for IRLR8259PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8259PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8259PBF reliable?

The price and inventory of IRLR8259PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8259PBF is usually 5 days.

3.What payment methods are accepted for IRLR8259PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8259PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR8259PBF?

IRLR8259PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8259PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8259PBF?

For technical support, including IRLR8259PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8259PBF requirements.

6.How does Aetrix verify that IRLR8259PBF is sourced from the original manufacturer or authorized distributors?

All IRLR8259PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8259PBF meets industry standards.

7.What is the process for return or replacement of IRLR8259PBF?

All IRLR8259PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8259PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8259PBF part is unused and in its original packaging.

Return procedure for IRLR8259PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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