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Infineon Technologies IRLR8721PBF
- Part No.:
- IRLR8721PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR8721PBF.pdf
- Description:
- MOSFET N-CH 30V 65A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,765
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Product details
Overview
IRLR8721PBF from Infineon Technologies is a 30V, 65A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency synchronous buck converters and isolated DC-DC converters with synchronous rectification. It delivers 6.3 mΩ RDS(on) at VGS = 10 V, 8.5 nC total gate charge, and fully characterized avalanche capability up to 93 mJ - enabling efficient, robust switching in server CPU VRMs and telecom power supplies.
For engineers reviewing the IRLR8721PBF datasheet, IRLR8721PBF pinout, IRLR8721PBF application, or IRLR8721PBF equivalent, key selection criteria include its ultra-low gate impedance (2.3 Ω), 17 ns reverse recovery time, 1.0 V body diode forward voltage, and thermal resistance of 2.3 °C/W junction-to-case - critical for high-density, thermally constrained power stages.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) and fast switching with minimal gate drive loss. Its gate threshold voltage (1.35–2.35 V) enables reliable 4.5 V logic-level drive, while the 3.4 nC gate-to-drain charge (Qgd) supports stable operation under high dv/dt conditions in synchronous rectifier topologies.
The device integrates a robust intrinsic body diode with 24–36 nC reverse recovery charge (Qrr) and 17–26 ns trr, validated for unclamped inductive switching. Its 1030 pF input capacitance (Ciss) and 110 pF reverse transfer capacitance (Crss) are specified at VDS = 15 V, supporting precise gate driver sizing for <10 ns turn-on delay and 6.5 ns fall time.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient overvoltage margins in telecom/industrial DC-DC. |
| RDS(on) max @ VGS = 10 V | 8.4 mΩ - Enables ≤1.3 W conduction loss at 65 A continuous drain current, reducing thermal load in compact PCB layouts. |
| Qg | 8.5 nC - Low gate charge allows efficient driving with standard 1–2 A peak gate drivers, minimizing switching loss at >500 kHz frequencies. |
| ID @ TC = 25°C | 65 A - Continuous current rating defined at case temperature, supporting high-current single-phase buck stages without forced airflow. |
| RθJC | 2.3 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for thermal management in high-power density designs. |
| EAS | 93 mJ - Single-pulse avalanche energy rating validates robustness against inductive switching stress without external snubbers. |
| trr | 17 ns - Fast reverse recovery minimizes cross-conduction loss during synchronous rectification in hard-switched topologies. |
Pinout & Package
IRLR8721PBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical performance. The three-terminal configuration supports high-current PCB routing and low-inductance layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives logic-level gate drive (1.35–2.35 V threshold); low 2.3 Ω gate resistance reduces ringing and EMI risk. |
| D (Drain) | High-side switch output | Connected to PCB copper pour or heatsink via exposed pad; carries full load current and withstands 30 V blocking. |
| S (Source) | Reference node / return path | Serves as local ground reference for gate driver; ties to power ground plane to minimize common-source inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V VGS | Enables direct interface with 3.3 V/5 V microcontrollers and PWM controllers without level-shifting circuitry. |
| Fully characterized avalanche performance | Validated 93 mJ single-pulse energy ensures reliability in unclamped inductive switching events typical in VRM phase nodes. |
| Low Qgd/Qg ratio (0.4) | Improves Miller immunity and reduces risk of false turn-on during high dv/dt transitions in half-bridge configurations. |
| Optimized body diode recovery | 24–36 nC Qrr and soft recovery behavior minimize voltage overshoot and EMI in synchronous rectifier applications. |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), supporting standard reflow profiles without baking requirements. |
Applications
| Server CPU Voltage Regulator | Telecom Isolated DC-DC Converter |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.8 V to modern x86 processors at up to 200 A per rail. IC Role / Device Role / Timing Role: Primary high-side switching element in each phase leg, operating at 300–1000 kHz with synchronous rectification. Use Value: 6.3 mΩ RDS(on) and 8.5 nC Qg reduce both conduction and switching losses, improving efficiency by ≥1.2% versus legacy 12 V gate-drive MOSFETs. |
Use Scenario: Secondary-side synchronous rectifier in 48 V input, 12 V output isolated flyback or forward converter for base station power modules. IC Role / Device Role / Timing Role: Low-voltage-side rectifying switch replacing Schottky diodes, driven by transformer-coupled or active gate control. Use Value: 1.0 V VSD and 17 ns trr cut conduction loss by 40% and reduce voltage spike-induced stress on primary-side FETs. |
| Industrial Motor Drive Half-Bridge | Automotive ADAS Power Supply |
Use Scenario: 24 V input H-bridge stage controlling 12–48 V BLDC motor windings in factory automation actuators. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutated at 20–100 kHz with dead-time control. Use Value: 260 A pulsed current rating and 2.3 °C/W RθJC support short-duration torque bursts without thermal derating or derating penalties. |
Use Scenario: Compact 5 V/3 A auxiliary supply for radar sensors and camera ECUs in automotive ADAS domain controllers. IC Role / Device Role / Timing Role: Main switch in high-efficiency buck regulator meeting AEC-Q101 stress requirements and ISO 7637-2 pulse immunity. Use Value: Fully characterized -55°C to +175°C operation and 93 mJ EAS ensure robustness against load dump transients and cold-cranking conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR3714PBF | Higher RDS(on) (12.5 mΩ @ 10 V), lower ID (42 A), same D-Pak package | Lower current handling limits use to ≤30 A loads; less suitable for high-phase-count VRMs | Select when cost sensitivity outweighs efficiency targets and thermal margin is ample. |
| SI2308DS-T1-E3 | Smaller SOT-23 package, lower current (4.3 A), higher RDS(on) (35 mΩ @ 4.5 V) | Only viable for low-power auxiliary rails (<5 W); not a drop-in replacement for main power stages | Choose only for space-constrained bias supplies where 65 A capability is unnecessary. |
Compared with IRLR8721PBF, IRLR3714PBF trades 33% higher conduction loss for lower unit cost, while SI2308DS-T1-E3 sacrifices 93% of current capacity and thermal capability - making IRLR8721PBF the optimal choice for high-efficiency, high-current synchronous rectification where board area and thermal design allow D-Pak mounting.
Availability
IRLR8721PBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom isolated DC-DC converters, and industrial motor drive half-bridges requiring stable component supply and long-term production continuity.
Supply support for IRLR8721PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.
The IRLR8721PBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing, communications, and industrial power systems.
FAQ
Is IRLR8721PBF suitable for 3.3 V gate drive?
Yes - its gate threshold voltage range (1.35–2.35 V) and guaranteed RDS(on) of 8.4 mΩ at VGS = 4.5 V make it fully compatible with 3.3 V logic outputs. However, for lowest RDS(on), a 5 V or higher gate drive is recommended to ensure full enhancement and minimize conduction loss.
What is the maximum safe operating frequency for IRLR8721PBF in a synchronous buck converter?
Based on its 8.5 nC Qg, 3.4 nC Qgd, and 6.5 ns fall time, the IRLR8721PBF supports stable operation up to 1 MHz in well-designed layouts with low-inductance gate loops and appropriate gate resistor selection (typically 1–5 Ω). Efficiency peaks between 300–700 kHz for most 24–48 V input applications.
Does IRLR8721PBF require a gate resistor for stability?
Yes - a series gate resistor (1.8–5.6 Ω) is required to dampen ringing caused by gate loop inductance and MOSFET input capacitance. The datasheet specifies RG = 1.8 Ω for switching characterization, and omitting this resistor risks shoot-through, EMI, and gate oxide stress in hard-switched topologies.
Can IRLR8721PBF be used in parallel configurations?
Yes - its positive temperature coefficient for RDS(on) (see Fig 4) enables inherent current sharing when paralleled. Successful implementation requires matched gate drive paths, symmetrical PCB layout, and thermal coupling via shared heatsink or copper pour to maintain uniform junction temperature across devices.
IRLR8721PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1030 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 65W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR8721PBF FAQ
1.How can I place an order for IRLR8721PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR8721PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR8721PBF reliable?
The price and inventory of IRLR8721PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8721PBF is usually 5 days.
3.What payment methods are accepted for IRLR8721PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8721PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR8721PBF?
IRLR8721PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR8721PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR8721PBF?
For technical support, including IRLR8721PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8721PBF requirements.
6.How does Aetrix verify that IRLR8721PBF is sourced from the original manufacturer or authorized distributors?
All IRLR8721PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8721PBF meets industry standards.
7.What is the process for return or replacement of IRLR8721PBF?
All IRLR8721PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8721PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR8721PBF part is unused and in its original packaging.
Return procedure for IRLR8721PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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