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Infineon Technologies IRLR8721TRPBF
- Part No.:
- IRLR8721TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR8721TRPBF.pdf
- Description:
- MOSFET N-CH 30V 65A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,518
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Product details
Overview
IRLR8721TRPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, rated for 30V VDS, 6.3 mΩ RDS(on) at VGS = 4.5V, and 8.5 nC total gate charge. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters for server VRMs and telecom power supplies.
For engineers reviewing the IRLR8721TRPBF datasheet, IRLR8721TRPBF pinout, IRLR8721TRPBF application, or IRLR8721TRPBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5V logic-level), ultra-low conduction loss at high current density, avalanche ruggedness for unclamped inductive switching, and thermal performance under PCB-mounted conditions.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for high-frequency operation up to 1 MHz in synchronous buck topologies. Its 6.3 mΩ on-resistance at 4.5V gate drive enables efficient 12V-to-1V conversion with minimal I²R loss at 20A continuous drain current.
The device features fully characterized unclamped inductive switching (UIS) capability with 93 mJ single-pulse avalanche energy and 20A rated avalanche current. Its 1030 pF input capacitance and 3.4 nC gate-to-drain charge support fast, controlled turn-on/turn-off transitions with low EMI generation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12V-input power stages with margin against transients |
| RDS(on) @ 4.5V | 6.3 mΩ max - Enables ≤1.26 W conduction loss at 20A, critical for thermally constrained VRM designs |
| Qg | 8.5 nC - Low gate charge reduces driver power demand and supports >500 kHz switching without excessive gate drive loss |
| ID @ TC=25°C | 65 A - Continuous current rating achievable with adequate heatsinking on 2 oz copper PCB |
| EAS | 93 mJ - Confirmed single-pulse avalanche energy ensures robustness during load dump or short-circuit events |
| RθJA (PCB mount) | 50 °C/W - Thermal resistance measured on standard JEDEC 2S2P test board, enabling accurate junction temp estimation |
Pinout & Package
D-Pak (TO-252) surface-mount package with exposed drain pad for enhanced thermal conduction to PCB copper. Standard 3-pin configuration: Gate (G), Drain (D), Source (S).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control terminal | Accepts 0–10 V logic-level drive; threshold voltage 1.35–2.35 V enables direct microcontroller interface |
| D | Drain connection | High-current output node tied to PCB thermal pad; electrically connected to package backside metal |
| S | Source reference | Common return path for load current and gate drive loop; forms low-inductance source node in synchronous rectifier layout |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5V | 6.3 mΩ enables <1.3 W conduction loss at 20A, reducing thermal stress in compact VRMs |
| Fully characterized UIS | 93 mJ EAS and 20A IAR validated per JEDEC JESD24-1, eliminating need for external snubbers |
| Low Qgd/Qg ratio | 3.4 nC / 8.5 nC = 0.4 - Minimizes Miller-induced shoot-through risk in high-side synchronous switching |
| Optimized body diode | 17 ns trr and 24 nC Qrr reduce reverse recovery losses when used as freewheeling device |
Applications
| Server Voltage Regulator Modules | Telecom DC-DC Converters |
|---|---|
Use Scenario: High-current, multi-phase 12V-to-1V buck converters powering Intel Xeon or AMD EPYC processors. IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position, switching at 300–600 kHz with precise dead-time control. Use Value: 6.3 mΩ RDS(on) at 4.5V reduces conduction loss by 35% vs. legacy 12V gate-drive MOSFETs, improving full-load efficiency by ≥1.2%. | Use Scenario: Isolated forward or LLC converters delivering 48V-to-12V/5V outputs in 48V telecom systems. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating in hard-switched or resonant mode with zero-voltage switching assist. Use Value: 17 ns reverse recovery time and low Qrr minimize body-diode conduction loss during transition, increasing converter efficiency by 0.8–1.1% at 50% load. |
| Industrial Motor Drive Inverters | Automotive ADAS Power Supplies |
Use Scenario: Half-bridge gate drivers controlling BLDC motors in HVAC blowers or servo amplifiers. IC Role / Device Role / Timing Role: Low-side switch in 24V–48V H-bridge, handling pulsed currents up to 260A peak. Use Value: 260A pulsed drain current rating and 2.3 °C/W RθJC allow reliable operation under intermittent overload without thermal shutdown. | Use Scenario: Compact 12V-to-3.3V/1.8V point-of-load regulators supplying radar SoCs and camera ISPs in ADAS ECUs. IC Role / Device Role / Timing Role: Primary-side switch in monolithic or discrete buck regulator, driven directly by automotive-grade PWM controller. Use Value: ±20V gate rating and -55°C to +175°C operating range ensure functional safety compliance under automotive temperature cycling and load dump conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR8726PbF | RDS(on) = 4.5 mΩ @ 4.5V; higher gate charge (11.5 nC); same D-Pak package | Better conduction loss but slower switching; suited for lower-frequency, higher-current apps | Select when thermal budget dominates over switching loss, e.g., <300 kHz VRMs |
| SI7850DP-T1-GE3 | RDS(on) = 5.2 mΩ @ 4.5V; 7.8 nC Qg; PowerPAK SO-8 package | Smaller footprint but higher RθJA (62 °C/W); limited to ≤40A continuous | Choose for space-constrained designs where PCB area is premium and current <40A |
Compared with IRLR8721TRPBF, the IRLR8726PbF trades higher gate drive loss for lower conduction loss, while the SI7850DP-T1-GE3 offers smaller size at the cost of thermal derating-making the IRLR8721TRPBF optimal for balanced high-frequency, high-current, thermally managed applications.
Availability
IRLR8721TRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply across long production lifecycles.
Supply support for IRLR8721TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRLR8721TRPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure.
FAQ
Is IRLR8721TRPBF suitable for 3.3V gate drive?
No. The device has a gate threshold voltage range of 1.35–2.35 V and is characterized for stable operation down to 4.5V VGS. At 3.3V, RDS(on) increases significantly (>25 mΩ), causing excessive conduction loss and thermal runaway risk. It requires minimum 4.5V logic-level drive for specified performance.
What is the maximum recommended PCB copper area for thermal performance?
For optimal thermal performance, Infineon recommends a minimum 400 mm² (20 mm × 20 mm) of 2 oz copper connected to the exposed drain pad via ≥6 thermal vias (0.3 mm diameter, spaced ≤2 mm apart). This achieves the published RθJA = 50 °C/W under JEDEC 2S2P test conditions.
Does IRLR8721TRPBF have integrated ESD protection?
No. The device does not incorporate on-die ESD protection structures. External gate protection (e.g., 10 Ω series resistor + 12 V Zener clamp to source) is required during handling and PCB assembly to prevent damage from human-body-model (HBM) discharges exceeding ±2 kV.
Can it replace IRLR8721PbF in existing designs?
Yes. IRLR8721TRPBF is the tape-and-reel packaging variant of the same die and package as IRLR8721PbF (tube version). Electrical specifications, thermal characteristics, and pinout are identical; only packaging format and reel orientation differ-no design or layout changes are needed.
IRLR8721TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1030 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 65W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR8721TRPBF FAQ
1.How can I place an order for IRLR8721TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR8721TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR8721TRPBF reliable?
The price and inventory of IRLR8721TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8721TRPBF is usually 5 days.
3.What payment methods are accepted for IRLR8721TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8721TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR8721TRPBF?
IRLR8721TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR8721TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR8721TRPBF?
For technical support, including IRLR8721TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8721TRPBF requirements.
6.How does Aetrix verify that IRLR8721TRPBF is sourced from the original manufacturer or authorized distributors?
All IRLR8721TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8721TRPBF meets industry standards.
7.What is the process for return or replacement of IRLR8721TRPBF?
All IRLR8721TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8721TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR8721TRPBF part is unused and in its original packaging.
Return procedure for IRLR8721TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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