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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR8726PBF

Name: IRLR8726PBF
Brand: Infineon Technologies
SKU: IRLR8726PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR8726PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR8726PBF.pdf

Description:: MOSFET N-CH 30V 86A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR8726PBF from Infineon Technologies is a 30V, 86A D-Pak N-channel HEXFET Power MOSFET optimized for high-frequency synchronous buck converters and isolated DC-DC rectification. It delivers 4.0 mΩ R_DS(on) at V_GS = 10 V, 15 nC total gate charge, and 2.0 Ω gate resistance-enabling fast switching with low conduction loss in CPU VRM and telecom power supplies.

For engineers reviewing the IRLR8726PBF datasheet, IRLR8726PBF pinout, IRLR8726PBF application, or IRLR8726PBF equivalent, key selection criteria include its 30V V_DS, ultra-low 4.0 mΩ on-resistance at 10V drive, 15nC Q_g, 2.0°C/W R_θJC, and fully characterized avalanche capability up to 120 mJ at T_J = 25°C.

Technical Context

This MOSFET employs a trench-gate HEXFET structure with optimized cell pitch and reduced gate-drain charge (Q_gd = 5.7 nC) to minimize switching losses in hard-switched topologies. Its 1.8V–2.35V gate threshold voltage ensures robust noise immunity while enabling 4.5V logic-level drive compatibility.

The integrated body diode exhibits 24 ns reverse recovery time (t_rr) and 52 nC Q_rr at I_F = 20 A, supporting efficient synchronous rectification. Thermal design is enabled by a low 2.0°C/W junction-to-case resistance and validated unclamped inductive switching performance up to 20 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24V input rails and transient margin in telecom/industrial DC-DC stages.
R_DS(on) max	5.8 mΩ @ V_GS = 10 V - Enables <1W conduction loss at 40A continuous drain current in thermally constrained PCB layouts.
Q_g typ.	15 nC - Reduces gate driver power demand and enables >1 MHz switching in synchronous buck controllers.
I_D @ T_C = 25°C	86 A - Supports high-current CPU core power delivery without external parallel devices.
R_θJC	2.0 °C/W - Allows direct heatsinking to chassis or copper pour for thermal management in high-power density modules.
E_AS	120 mJ - Validates robustness against inductive energy spikes during hard-switching transitions in non-isolated converters.
t_rr	24 ns - Minimizes body diode reverse recovery loss during dead-time conduction in synchronous rectifiers.

Pinout & Package

D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. Standard 3-pin surface-mount outline: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Receives PWM signal; 2.0 Ω internal gate resistance limits dV/dt-induced shoot-through risk.
D	Drain output node	Connected to high-side switch node or transformer secondary; electrically tied to exposed metal tab for thermal path.
S	Source reference node	Return path for load current; used as common reference for gate drive and current sensing in low-side configurations.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V V_GS	6.8 mΩ - Enables direct interface with 3.3V/5V microcontroller GPIOs without level-shifting in auxiliary power stages.
Fully characterized avalanche rating	120 mJ single-pulse E_AS - Eliminates need for external snubbers in flyback or forward converter primary switches.
Lead-free and RoHS compliant	Meets IPC-J-STD-020C reflow profile - supports lead-free assembly in industrial and telecom manufacturing lines.
Low Q_gd/Q_g ratio	5.7 nC / 15 nC = 0.38 - Improves Miller immunity and reduces risk of false turn-on during high dv/dt commutation events.

Applications

Server CPU Voltage Regulator

Telecom Isolated DC-DC

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.8V to x86 server processors under dynamic load transients up to 300A.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: 4.0 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 8mΩ parts, lowering thermal stress on 6-layer PCBs.

Use Scenario: Secondary-side synchronous rectifier in 48V-to-12V isolated DC-DC converters for 5G base station power systems.

IC Role / Device Role / Timing Role: Fast-recovery N-channel switch replacing Schottky diodes in forward/flyback topologies.

Use Value: 24 ns t_rr and 52 nC Q_rr cut body diode recovery loss by 60% compared to standard 40 ns diodes, improving efficiency at full load.

Industrial Motor Drive Inverter

Automotive ADAS Power Supply

Use Scenario: Half-bridge leg in 24V BLDC motor controller for HVAC blowers and pump drivers requiring >100k-hour reliability.

IC Role / Device Role / Timing Role: High-side switching element with integrated avalanche ruggedness for inductive kick protection.

Use Value: 120 mJ E_AS withstands repeated inductive energy dumps without derating, eliminating external TVS components.

Use Scenario: Input-stage high-side switch in 12V-to-5V/3.3V PMIC for radar and camera modules with strict EMC requirements.

IC Role / Device Role / Timing Role: Load switch with controlled turn-on slew rate and low R_DS(on) to minimize voltage drop during cold-cranking.

Use Value: 5.8 mΩ R_DS(on) limits dropout to <0.5V at 8A peak, preserving downstream regulator headroom during battery dips.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8721PBF	Same D-Pak package; higher R_DS(on) (7.0 mΩ @ 10V) and lower I_D (72A)	Lower current handling; suitable only for ≤60A loads with relaxed thermal margins	Select when cost sensitivity outweighs efficiency gain and board space allows larger thermal pads.
STL220N3LLH6	30V, 220A, 2.2 mΩ; H2PAK-2 package with dual die; higher Q_g (39 nC)	Requires higher gate drive strength; better for parallel operation but incompatible pinout	Choose for ultra-high-current designs where paralleling is impractical and layout permits larger footprint.

Compared with IRLR8726PBF, the IRLR8721PBF trades 17% higher conduction loss for lower gate charge (12 nC), while STL220N3LLH6 delivers 45% lower R_DS(on) at the cost of 2.6× higher Q_g and non-drop-in packaging-making IRLR8726PBF optimal for balanced high-frequency, medium-current applications.

Availability

IRLR8726PBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom isolated DC-DC converters, and industrial motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for IRLR8726PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation.

The HEXFET Power MOSFET product line targets high-efficiency, high-reliability power conversion in computing, telecom, and industrial systems-designed for minimal switching and conduction loss in hard-switched topologies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR8726PBF supports 38 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and requires adequate copper area or heatsinking to maintain safe junction temperatures below 175°C.

Does this MOSFET support 4.5V gate drive for full enhancement?

Yes-IRLR8726PBF achieves 6.8 mΩ R_DS(on) at V_GS = 4.5 V, confirming full enhancement at logic-level drive. Its gate threshold voltage range (1.35–2.35 V) ensures reliable turn-on with 3.3V or 5V controllers without risk of partial conduction.

Is the body diode suitable for synchronous rectification without external Schottky replacement?

Yes-the integrated body diode has 24 ns t_rr and 52 nC Q_rr at I_F = 20 A, making it viable for synchronous rectification in 300–1000 kHz DC-DC converters. However, for >1 MHz operation or ultra-low-loss requirements, discrete Schottky diodes may still offer marginal improvement.

What is the recommended PCB layout practice for thermal management?

Use ≥25 mm² of 2-oz copper connected directly to the exposed drain pad via ≥4 thermal vias (0.3mm diameter, filled or plated). Maintain ≥0.5 mm clearance between gate trace and high-dv/dt nodes to suppress capacitive coupling, and route source return paths wide and short to minimize loop inductance.

IRLR8726PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 86A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2150 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR8726PBF FAQ

1.How can I place an order for IRLR8726PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8726PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8726PBF reliable?

The price and inventory of IRLR8726PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8726PBF is usually 5 days.

3.What payment methods are accepted for IRLR8726PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8726PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR8726PBF?

IRLR8726PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8726PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8726PBF?

For technical support, including IRLR8726PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8726PBF requirements.

6.How does Aetrix verify that IRLR8726PBF is sourced from the original manufacturer or authorized distributors?

All IRLR8726PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8726PBF meets industry standards.

7.What is the process for return or replacement of IRLR8726PBF?

All IRLR8726PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8726PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8726PBF part is unused and in its original packaging.

Return procedure for IRLR8726PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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