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Infineon Technologies IRLR8726TRLPBF

Part No.:
IRLR8726TRLPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRLR8726TRLPBF.pdf
Description:
MOSFET N-CH 30V 86A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,468

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Product details

Overview

IRLR8726TRLPBF from Infineon Technologies is a 30V, 86A D-Pak N-channel HEXFET Power MOSFET optimized for high-frequency synchronous buck and isolated DC-DC converters. It delivers 4.0 mΩ RDS(on) at VGS = 10 V, 15 nC total gate charge, and 2.0 Ω gate resistance - enabling fast switching with low conduction loss in processor power and telecom rectification stages.

For engineers reviewing the IRLR8726TRLPBF datasheet, IRLR8726TRLPBF pinout, IRLR8726TRLPBF application, or IRLR8726TRLPBF equivalent, key selection criteria include its 30V VDS, ultra-low 4.0 mΩ on-resistance at 10V drive, 15nC Qg, avalanche-rated construction, and D-Pak thermal performance (RθJC = 2.0°C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with fully characterized unclamped inductive switching capability (EAS = 120 mJ at TJ = 25°C). Its gate threshold voltage (1.35–2.35 V) and negative temperature coefficient (−8.6 mV/°C) support stable parallel operation under thermal stress.

The device integrates a robust body diode with 24–36 ns reverse recovery time and 52–78 nC Qrr, enabling efficient synchronous rectification without external Schottky replacement in 1–2 MHz DC-DC topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum blocking voltage compatible with 24V input rails and transient overshoot in telecom/industrial supplies.
RDS(on) max @ 10V5.8 mΩ - Confirmed worst-case conduction loss at full rated current; typical value 4.0 mΩ enables <1.2W I²R loss at 25A DC.
Qg typ.15 nC - Low gate charge reduces driver power demand and supports >1 MHz switching with standard gate drivers.
ID @ TC = 25°C86 A - Continuous drain current rating defined at case temperature, validated for D-Pak mounting on 1-in² 2-oz copper.
RθJC2.0 °C/W - Junction-to-case thermal resistance enables direct heatsink attachment for high-power density designs.
EAS120 mJ - Single-pulse avalanche energy rating ensures robustness against inductive turn-off transients in synchronous rectifiers.

Pinout & Package

IRLR8726TRLPBF uses the industry-standard D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical performance. Pin assignment is verified per Infineon's official package drawing and datasheet Figure 1.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; connects to power ground plane; carries full load current in low-side switch configuration.
Pin 2 (Gate)Control inputHigh-impedance MOS gate requiring <15 nC charge; sensitive to ESD; routed away from noisy power traces.
Pin 3 (Drain)Power output / high-side returnExposed copper pad on bottom surface; electrically and thermally connected to PCB copper pour for heat dissipation and low-inductance current path.

Key Features

FeatureDesign Value
Ultra-low RDS(on) at 4.5V VGSEnables direct drive from 5V logic or PWM controllers without level-shifting; maintains <8 mΩ on-resistance in 5V-gate applications.
Fully characterized avalanche voltage/currentGuarantees safe operation under unclamped inductive switching events up to 120 mJ, eliminating need for external snubbers in synchronous rectifier designs.
Lead-free, RoHS-compliant constructionMeets IPC-J-STD-020 moisture sensitivity level 1 (MSL1); qualified for reflow up to 260°C peak, supporting automated SMT assembly.
Low gate impedance (2.0–3.5 Ω)Reduces gate ringing and EMI during hard switching; simplifies gate driver layout and damping resistor selection.

Applications

Server CPU VRMTelecom DC-DC Rectifier

Use Scenario: High-current, multi-phase 12V-to-1V buck converter supplying modern x86 processors in datacenter servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: 4.0 mΩ RDS(on) minimizes conduction loss at >60A per phase; 15nC Qg enables clean turn-on with minimal driver loss.

Use Scenario: Secondary-side synchronous rectification in 48V-to-12V isolated forward or LLC converters for 5G base station power supplies.

IC Role / Device Role / Timing Role: Fast-recovery power switch replacing Schottky diodes to improve efficiency above 200 kHz.

Use Value: Body diode trr = 24–36 ns and Qrr = 52–78 nC reduce switching loss and voltage spikes during commutation.

Industrial PLC Power ModuleAutomotive ADAS Camera Power

Use Scenario: Compact 24V-input DC-DC module delivering 5V/3A to programmable logic controllers with strict thermal limits.

IC Role / Device Role / Timing Role: Primary-side high-frequency switch in non-isolated buck regulator with 100% duty-cycle capability.

Use Value: RθJC = 2.0°C/W allows direct heatsink mounting on limited PCB area; 30V VDS accommodates 24V rail transients.

Use Scenario: Point-of-load converter powering image sensor and ISP in automotive rear-view or surround-view camera modules.

IC Role / Device Role / Timing Role: Low-noise, low-EMI power switch operating in constant-on-time (COT) mode at 2 MHz.

Use Value: Ultra-low Qg and Ciss = 2150 pF enable stable high-frequency regulation with minimal input capacitance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR8721PbFSame D-Pak package; higher RDS(on) (6.8 mΩ typ. @ 10V); lower ID (75A @ 25°C)Suitable for lower-current (<60A) or cost-sensitive designs where 1.0 mΩ higher on-resistance is acceptableSelect when thermal margin exists and gate drive is constrained - same footprint but reduced performance headroom
STL220N3LLH630V, 220A, PowerFLAT 5x6; RDS(on) = 1.8 mΩ @ 10V; Qg = 39 nC; different package and pinoutRequires PCB redesign; suited for higher-current, lower-loss systems where space permits larger thermal padChoose only if upgrading to higher current density and accepting higher gate drive demand and layout change

Compared with IRLR8726TRLPBF, IRLR8721PbF trades 1.8 mΩ higher RDS(on) for identical form factor, while STL220N3LLH6 offers half the on-resistance but doubles gate charge and mandates new layout - making IRLR8726TRLPBF optimal for balanced 80–100A D-Pak applications.

Availability

IRLR8726TRLPBF is available at Aetrix Electronics and suitable for server CPU VRMs, telecom DC-DC rectifiers, and industrial PLC power modules requiring stable component supply across extended production lifecycles.

Supply support for IRLR8726TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRLR8726TRLPBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure.

FAQ

Is IRLR8726TRLPBF suitable for 5V gate drive applications?

Yes. The device specifies RDS(on) ≤ 8.0 mΩ at VGS = 4.5 V and has a gate threshold voltage range of 1.35–2.35 V, ensuring reliable enhancement-mode operation with standard 5V logic-level drivers without requiring gate boosting.

What is the maximum continuous drain current at 100°C case temperature?

Per the Absolute Maximum Ratings table, ID @ TC = 100°C is 38 A. This derated value reflects thermal limitations of the D-Pak package under sustained high-temperature operation and must be validated with actual board-level thermal design.

Does IRLR8726TRLPBF include integrated ESD protection?

No. The device does not integrate dedicated ESD protection circuitry. Gate oxide is rated for ±20 V VGS, and handling requires standard MOSFET ESD precautions - including grounded workstations, ionized air, and gate-series resistors in production circuits.

Can IRLR8726TRLPBF replace IRLR8721PbF in existing designs?

Yes - it is a direct drop-in replacement with identical D-Pak footprint and pinout. IRLR8726TRLPBF offers lower RDS(on) (4.0 vs. 6.8 mΩ), higher ID (86 vs. 75 A), and identical gate characteristics, enabling immediate efficiency improvement without layout changes.

IRLR8726TRLPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
86A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2150 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
75W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRLR8726TRLPBF FAQ

1.How can I place an order for IRLR8726TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8726TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8726TRLPBF reliable?

The price and inventory of IRLR8726TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8726TRLPBF is usually 5 days.

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IRLR8726TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8726TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8726TRLPBF?

For technical support, including IRLR8726TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8726TRLPBF requirements.

6.How does Aetrix verify that IRLR8726TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRLR8726TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8726TRLPBF meets industry standards.

7.What is the process for return or replacement of IRLR8726TRLPBF?

All IRLR8726TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8726TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8726TRLPBF part is unused and in its original packaging.

Return procedure for IRLR8726TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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