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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR8729TRLPBF

Name: IRLR8729TRLPBF
Brand: Infineon Technologies
SKU: IRLR8729TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR8729TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR8729TRLPBF.pdf

Description:: MOSFET N-CH 30V 58A D-PAK

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Product details

Overview

IRLR8729TRLPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, rated for 30 V V_DS, 58 A I_D @ T_C = 25°C, and 8.9 mΩ R_DS(on) at V_GS = 4.5 V. It delivers ultra-low gate impedance (R_G = 1.6–2.7 Ω), 10 nC total gate charge, and is optimized for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IRLR8729TRLPBF datasheet, IRLR8729TRLPBF pinout, IRLR8729TRLPBF application, or IRLR8729TRLPBF equivalent, key selection criteria include its 4.5 V logic-level drive capability, avalanche-rated ruggedness (E_AS = 250 mJ), low C_iss (1350 pF), and thermal resistance R_θJC = 2.73 °C/W - critical for compact, high-efficiency power stages in telecom and processor VRMs.

Technical Context

This MOSFET employs a planar silicon process with optimized cell pitch and trench-free structure to achieve low R_DS(on) while maintaining fast switching (t_r = 47 ns, t_f = 10 ns) and low Q_gd/Q_gs2 ratio (4.0 nC / 1.3 nC). Its gate threshold voltage (V_GS(th) = 1.35–2.35 V) ensures reliable turn-on with standard 3.3 V or 5 V controllers.

The integrated body diode exhibits low V_SD = 1.0 V max and fast reverse recovery (t_rr = 16–24 ns, Q_rr = 19–29 nC), enabling efficient synchronous rectification without external Schottky replacement in isolated flyback and forward topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 24 V input rails with 25 % margin for transient spikes in telecom and industrial DC-DC
R_DS(on) @ 4.5 V	8.9 mΩ max - enables <1 W conduction loss at 30 A in high-current VRM phases
Q_g	10 nC typ - reduces gate driver power demand and allows use of low-cost SOT-23 drivers
C_iss	1350 pF typ - minimizes Miller-induced shoot-through risk in hard-switched synchronous buck stages
E_AS	250 mJ single-pulse - withstands unclamped inductive energy during startup/fault in isolated converters
R_θJC	2.73 °C/W - enables direct heatsink mounting for >40 W continuous dissipation at T_C = 100°C
t_r/t_f	47 ns / 10 ns - supports >1 MHz switching without excessive switching loss penalty

Pinout & Package

IRLR8729TRLPBF uses the surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical performance. The three-terminal configuration supports high-current PCB routing and low-inductance source return paths.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 0–10 V logic-level signals; low R_G (1.6–2.7 Ω) reduces gate ringing and EMI
D	Drain	Main current path output; electrically connected to exposed copper pad for thermal conduction and low-inductance layout
S	Source	Reference node for gate drive and current sensing; tied to power ground plane with minimal loop area

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS = 4.5 V - eliminates need for level-shifters in 3.3 V controller designs
Ultra-low R_DS(on)	6.0 mΩ typ at V_GS = 10 V - cuts conduction loss by >30 % vs. legacy 12 V gate MOSFETs in same package
Fully characterized avalanche	Rated E_AS = 250 mJ - enables robust operation in non-clamped topologies like active clamp forward
Low Q_gd/Q_g ratio	4.0 nC / 10 nC = 0.4 - improves hard-switching efficiency and reduces gate drive losses
RoHS-compliant lead-free	Pb-free plating and halogen-free molding compound - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1)

Applications

Server VRM Phase Legs

Telecom Isolated DC-DC Rectifiers

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with 4.5 V gate drive from PWM controller.

Use Value: 8.9 mΩ R_DS(on) limits I²R loss to <5 W per phase at 40 A, enabling air-cooled 3U server chassis design.

Use Scenario: Secondary-side synchronous rectification in 48 V input, 12 V/50 A isolated forward converter for base station power supplies.

IC Role / Device Role / Timing Role: Main rectifying switch replacing Schottky diode; driven by transformer-coupled gate signal with dead-time control.

Use Value: 1.0 V V_SD and 24 ns t_rr reduce conduction and recovery losses by 40 % vs. 40 V Schottky, improving full-load efficiency from 92 % to 94.5 %.

Industrial PLC Power Modules

Automotive ADAS Domain Controllers

Use Scenario: 24 V input, 5 V/15 A point-of-load regulator powering FPGA and I/O banks in programmable logic controllers.

IC Role / Device Role / Timing Role: High-side or low-side switch in compact synchronous buck stage; thermally coupled to metal-core PCB.

Use Value: R_θJC = 2.73 °C/W allows 100 % load operation at 70°C ambient without heatsink, reducing BOM cost and footprint.

Use Scenario: 12 V battery-fed 3.3 V/8 A power rail for radar sensor SoCs in autonomous driving ECUs.

IC Role / Device Role / Timing Role: Input-stage MOSFET in automotive-grade buck converter meeting AEC-Q101 stress requirements.

Use Value: Avalanche rating (E_AS = 250 mJ) protects against load dump transients and inductive kickback from solenoid drivers sharing same 12 V bus.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3103TRLPBF	R_DS(on) = 12 mΩ @ 4.5 V; Q_g = 12 nC; V_DS = 30 V	Higher conduction loss at >25 A; slower switching due to higher C_iss (1600 pF)	Preferred where cost sensitivity outweighs efficiency; suitable for <300 kHz operation
SI7850DP-T1-GE3	R_DS(on) = 7.5 mΩ @ 4.5 V; Q_g = 14 nC; SO-8 package (no exposed drain)	Lower R_DS(on) but higher gate charge increases driver loss; limited thermal performance (R_θJA = 62 °C/W)	Best for space-constrained low-power designs (<15 A); not recommended for >50 W continuous dissipation

Compared with IRLR3103TRLPBF and SI7850DP-T1-GE3, the IRLR8729TRLPBF offers optimal balance of low R_DS(on), moderate Q_g, and superior thermal management via D-Pak's exposed drain - making it the preferred choice for high-current, high-reliability 30 V synchronous rectifiers.

Availability

IRLR8729TRLPBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial PLC power modules, and automotive ADAS domain controllers requiring stable component supply and long-term lifecycle support.

Supply support for IRLR8729TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in computing, telecom, and industrial systems - emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for IRLR8729TRLPBF at 100°C case temperature?

The maximum continuous drain current is 41 A at T_C = 100°C with V_GS = 10 V, derated linearly from 58 A at 25°C using the specified 0.37 W/°C derating factor. This reflects real thermal limits under sustained high-power operation on a properly designed PCB with copper pour and thermal vias.

Does IRLR8729TRLPBF require a gate resistor for stability in high-frequency buck converters?

Yes - a 1.8 Ω gate resistor is recommended per IR's switching time test circuit (Fig. 14a) to dampen ringing caused by PCB inductance and MOSFET C_iss/C_rss interaction. Omitting it risks shoot-through and EMI above 300 kHz, especially with high di/dt (>100 A/µs) in multiphase VRMs.

Can IRLR8729TRLPBF be used in avalanche mode for clamping inductive loads?

Yes - it is fully characterized for unclamped inductive switching with E_AS = 250 mJ at T_J = 25°C and I_AR = 20 A. However, repetitive avalanche requires strict thermal management and pulse-width limitation (≤60 µs) to avoid cumulative junction temperature rise beyond 175°C.

Is the body diode suitable for freewheeling in non-synchronous configurations?

It is usable but suboptimal: V_SD = 1.0 V max and t_rr = 24 ns result in higher conduction loss and reverse recovery loss than discrete Schottky diodes. For non-synchronous designs above 10 A, pairing with a 40 V/30 A Schottky (e.g., SS3040) improves efficiency by 1.2–1.8 % at full load.

IRLR8729TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 55W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR8729TRLPBF FAQ

1.How can I place an order for IRLR8729TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8729TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8729TRLPBF reliable?

The price and inventory of IRLR8729TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8729TRLPBF is usually 5 days.

3.What payment methods are accepted for IRLR8729TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8729TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR8729TRLPBF?

IRLR8729TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8729TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8729TRLPBF?

For technical support, including IRLR8729TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8729TRLPBF requirements.

6.How does Aetrix verify that IRLR8729TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRLR8729TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8729TRLPBF meets industry standards.

7.What is the process for return or replacement of IRLR8729TRLPBF?

All IRLR8729TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8729TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8729TRLPBF part is unused and in its original packaging.

Return procedure for IRLR8729TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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