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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR8729TRPBF

Name: IRLR8729TRPBF
Brand: Infineon Technologies
SKU: IRLR8729TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR8729TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR8729TRPBF.pdf

Description:: MOSFET N-CH 30V 58A DPAK

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Product details

Overview

IRLR8729TRPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, rated for 30 V V_DS, 8.9 mΩ R_DS(on) at V_GS = 4.5 V, and 58 A continuous drain current at T_C = 25°C. It delivers ultra-low gate impedance (R_G = 1.6–2.7 Ω), 10 nC total gate charge, and is optimized for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IRLR8729TRPBF datasheet, IRLR8729TRPBF pinout, IRLR8729TRPBF application, or IRLR8729TRPBF equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, avalanche-rated ruggedness (E_AS = 250 mJ), low-output capacitance (C_oss = 280 pF), and thermal resistance of R_θJC = 2.73 °C/W - critical for compact, high-efficiency power stages in telecom and processor VRMs.

Technical Context

This MOSFET employs a planar silicon HEXFET structure with fully characterized unclamped inductive switching (UIS) capability and temperature-stable threshold voltage (V_GS(th) tempco = −6.2 mV/°C). Its low R_DS(on) and fast switching (t_r = 47 ns, t_f = 10 ns) enable high-efficiency operation above 500 kHz in synchronous buck topologies.

The device integrates a robust intrinsic body diode with t_rr = 16–24 ns and Q_rr = 19–29 nC, supporting zero-voltage switching (ZVS) transitions and minimizing commutation losses in phase-shifted full-bridge and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 12 V and 24 V input rails with margin for transient spikes in telecom and industrial DC-DC systems
R_DS(on) @ V_GS = 4.5 V	8.9 mΩ max - enables <1 W conduction loss at 30 A, reducing heatsink requirements in space-constrained VRMs
Q_g	10 nC typ - allows efficient 1–2 A gate driver sizing and minimizes switching energy loss at >1 MHz frequencies
t_r/t_f	47 ns / 10 ns - supports clean hard-switching up to 1.5 MHz without excessive EMI or shoot-through risk
R_θJC	2.73 °C/W - permits direct mounting to copper planes or heatsinks for thermal management in high-power density PCBs
E_AS	250 mJ - withstands single-pulse inductive energy during startup/fault conditions without failure in synchronous rectifier applications
C_oss	280 pF - reduces capacitive turn-off loss and improves light-load efficiency in resonant topologies

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for enhanced thermal and electrical performance. Standard 3-pin configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Control electrode	Accepts logic-level (≥4.5 V) gate drive; low input capacitance (C_iss = 1350 pF) eases driver design
D	High-current drain node	Connected to exposed metal tab - must be electrically tied to output rail and thermally coupled to PCB copper pour
S	Source reference and return path	Serves as common reference for gate drive and current sensing; low-inductance layout critical for stability

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS = 4.5 V (R_DS(on) ≤ 8.9 mΩ), eliminating need for level-shifting in 5 V or 3.3 V control systems
Fully characterized avalanche	Rated for 250 mJ single-pulse energy (E_AS) - enables reliable operation under inductive load faults without external snubbers
Ultra-low gate impedance	R_G = 1.6–2.7 Ω - suppresses gate oscillation and simplifies gate resistor selection for stable switching
Lead-free & RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) - suitable for standard reflow processes without baking

Applications

Server CPU Voltage Regulator

Telecom 48 V Input DC-DC Converter

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.8 V at up to 200 A to modern x86 processors.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side position, switching at 500 kHz–1 MHz with precise dead-time control.

Use Value: 8.9 mΩ R_DS(on) at 4.5 V gate drive reduces conduction loss by ≥35% vs. legacy 12 V gate devices, improving VR efficiency by 1.2–1.8% at full load.

Use Scenario: Isolated forward or active-clamp forward converter converting 36–75 V telecom input to 12 V intermediate bus.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating in continuous conduction mode (CCM) with ZVS-assisted turn-on.

Use Value: Low Q_rr (19–29 nC) and fast t_rr (16–24 ns) minimize reverse recovery loss and enable >94% secondary-side efficiency at 50 A output.

Industrial PLC Power Module

Automotive ADAS Camera Power Supply

Use Scenario: Compact 24 V input buck converter powering FPGA, I/O, and communication interfaces in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary-side high-side switch in non-isolated buck regulator with integrated controller.

Use Value: Rugged UIS rating and −55°C to +175°C T_J range ensure reliability across wide ambient temperatures and load transients in factory environments.

Use Scenario: 12 V automotive input buck converter delivering 3.3 V/2 A to image sensor and ISP in surround-view camera modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 2 MHz fixed-frequency converter with tight EMI constraints.

Use Value: Low C_oss (280 pF) and fast t_f (10 ns) reduce high-frequency ringing and simplify EMI filter design to meet CISPR-25 Class 5 limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8726PbF	R_DS(on) = 6.7 mΩ @ 4.5 V, Q_g = 12 nC, same D-Pak package	Higher conduction loss margin but slower switching due to higher gate charge	Preferred where thermal headroom is limited but switching frequency ≤300 kHz
SiR872DP-T1-GE3	R_DS(on) = 7.2 mΩ @ 4.5 V, Q_g = 11.5 nC, same footprint, Vishay Gen. IV trench MOSFET	Lower C_oss (220 pF) and improved FOM (Q_g × R_DS(on) = 83), but lower E_AS rating (180 mJ)	Better for ultra-high-frequency designs (>1 MHz) where avalanche stress is minimal

Compared with IRLR8729TRPBF, the IRLR8726PbF trades faster switching for lower on-resistance, while the SiR872DP-T1-GE3 offers superior high-frequency figure-of-merit but reduced ruggedness - selection depends on whether thermal, switching, or fault robustness dominates the design priority.

Availability

IRLR8729TRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial PLC power supplies, and automotive ADAS camera modules requiring stable component supply and long-term manufacturability.

Supply support for IRLR8729TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation and manufacturing excellence.

The HEXFET Power MOSFET product line was engineered for high-efficiency, high-reliability power conversion in computing, telecom, and industrial systems - emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

Is IRLR8729TRPBF suitable for 3.3 V gate drive?

No - while it conducts at V_GS = 3.3 V, its R_DS(on) is not specified below 4.5 V. At 3.3 V, typical R_DS(on) rises to ~15–20 mΩ, increasing conduction loss significantly. It is validated and guaranteed for stable operation only at V_GS ≥ 4.5 V per datasheet Fig. 3 and absolute maximum ratings.

What is the maximum recommended PCB copper area for thermal relief?

For optimal R_θJC = 2.73 °C/W, the D-Pak drain pad must be soldered to ≥400 mm² (20 mm × 20 mm) of 2 oz copper on the primary layer, with ≥4 thermal vias (0.3 mm diameter, filled or plated) connecting to inner/ground planes. Smaller areas increase junction temperature by 15–40°C at 50 A continuous current.

Does IRLR8729TRPBF have integrated ESD protection?

No - it lacks on-chip ESD protection diodes. Gate-source breakdown is rated at ±20 V, and handling requires strict adherence to J-STD-001 and IPC-A-610 standards. External 10 kΩ gate resistors and TVS clamps are recommended in automated assembly and field-replaceable modules to prevent electrostatic damage.

Can it replace IRLR8721PbF in existing designs?

Yes - both are D-Pak N-channel MOSFETs with identical pinout and 30 V rating, but IRLR8729TRPBF has 25% lower R_DS(on) (8.9 mΩ vs. 12 mΩ @ 4.5 V) and 17% lower Q_g (10 nC vs. 12 nC). Layout and gate drive remain compatible; thermal design margin improves, allowing higher current or lower temperature rise in the same footprint.

IRLR8729TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 55W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR8729TRPBF FAQ

1.How can I place an order for IRLR8729TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8729TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8729TRPBF reliable?

The price and inventory of IRLR8729TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8729TRPBF is usually 5 days.

3.What payment methods are accepted for IRLR8729TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8729TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR8729TRPBF?

IRLR8729TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8729TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8729TRPBF?

For technical support, including IRLR8729TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8729TRPBF requirements.

6.How does Aetrix verify that IRLR8729TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR8729TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8729TRPBF meets industry standards.

7.What is the process for return or replacement of IRLR8729TRPBF?

All IRLR8729TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8729TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8729TRPBF part is unused and in its original packaging.

Return procedure for IRLR8729TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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