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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR8743PBF

Name: IRLR8743PBF
Brand: Infineon Technologies
SKU: IRLR8743PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR8743PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR8743PBF.pdf

Description:: MOSFET N-CH 30V 160A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR8743PBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, designed as a synchronous rectifier or control FET in high-frequency DC-DC converters. It delivers 30V V_DSS, 2.4 mΩ typical R_DS(on) at V_GS = 4.5V, 39 nC total gate charge, and 640 A pulsed drain current - enabling efficient operation in computer VRMs and telecom isolated converters.

For engineers reviewing the IRLR8743PBF datasheet, IRLR8743PBF pinout, IRLR8743PBF application, or IRLR8743PBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5V logic-level), ultra-low Q_gd/Q_gs1 ratio for C_dv/dt immunity, fully characterized avalanche energy (13.5 mJ), and junction-to-case thermal resistance of 1.11°C/W for thermally constrained PCB layouts.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted channel geometry to achieve sub-3 mΩ on-resistance at 4.5 V gate drive while maintaining robust unclamped inductive switching capability. Its gate charge profile shows 10 nC pre-threshold (Q_gs1) and 13 nC gate-to-drain (Q_gd) components, supporting fast, controlled turn-on/turn-off in synchronous buck topologies operating above 500 kHz.

The integrated body diode exhibits 18–27 ns reverse recovery time (t_rr) and 32–48 nC reverse recovery charge (Q_rr) at I_F = 20 A, enabling low-loss freewheeling in hard-switched converters. Thermal design is supported by validated transient impedance curves (Z_thJC) and linear derating factor of 1.11 W/°C above 100°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - supports 12 V and 24 V input rails with margin against voltage transients
R_DS(on) @ 4.5 V	2.4 mΩ typ - enables <1.2 W conduction loss at 20 A RMS in VRM output stages
Q_g	39 nC - determines gate driver current requirement and switching loss scaling
Q_gd	13 nC - critical for C_dv/dt immunity; low ratio to Q_gs1 suppresses false turn-on
E_AS	13.5 mJ - ensures reliable operation under unclamped inductive load conditions
R_θJC	1.11 °C/W - allows direct heatsinking to copper pour or external thermal pad for 60+ W power handling
t_rr	18–27 ns - minimizes body diode switching loss and cross-conduction risk in synchronous rectification

Pinout & Package

D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection; standard 3-pin surface-mount configuration.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; accepts 0–20 V logic-level drive; requires low-impedance gate driver due to 0.85 Ω intrinsic gate resistance
D	Drain	Main power output node; electrically and thermally connected to exposed copper pad; ties to switching node in buck topology
S	Source	Power return path and reference for gate drive; connects to low-side switch source or ground plane in synchronous rectifier configuration

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	2.4 mΩ typ - eliminates need for gate boosting in 5 V or 3.3 V controller designs
Low Q_gd/Q_gs1 ratio	1.3 - reduces susceptibility to parasitic turn-on during high dV/dt transitions at switching node
Characterized avalanche performance	13.5 mJ single-pulse E_AS - enables robustness without external snubbers in non-isolated converters
Fast body diode recovery	27 ns max t_rr - limits reverse recovery losses and prevents shoot-through in synchronous rectifiers
Lead-free and RoHS-compliant	Pb-free plating and halogen-free molding compound - meets IPC-J-STD-020 moisture sensitivity level 1

Applications

Server CPU Voltage Regulator

Telecom 48 V Input DC-DC Converter

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.8 V to x86 processors at up to 200 A per rail.

IC Role / Device Role: Low-side synchronous rectifier FET, replacing Schottky diodes to reduce conduction loss and improve efficiency.

Use Value: 2.4 mΩ R_DS(on) at 4.5 V enables >92% efficiency at 100 A load, reducing thermal stress on PCB copper layers.

Use Scenario: Isolated forward or LLC converter with secondary-side synchronous rectification for 48 V telecom systems.

IC Role / Device Role: Secondary-side power switch in active rectification stage, driven by transformer-coupled or digital gate signals.

Use Value: 13.5 mJ avalanche rating supports safe operation during output short-circuit events without clamping circuitry.

Industrial PLC Power Module

Automotive ADAS Camera Power Supply

Use Scenario: Compact 24 V input, 5 V/12 V dual-output DC-DC module powering I/O and communication interfaces.

IC Role / Device Role: Control FET in primary-side synchronous buck regulator, operating at 300–600 kHz switching frequency.

Use Value: 39 nC total gate charge balances switching speed and driver power consumption, enabling use with low-cost gate drivers.

Use Scenario: 12 V automotive input, 3.3 V output buck converter powering image sensor and ISP in rear-view camera modules.

IC Role / Device Role: High-efficiency power switch meeting AEC-Q101 stress test requirements for under-hood environments.

Use Value: -55°C to +175°C operating range and 1.11°C/W R_θJC support stable performance across extended temperature cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3714PBF	Higher R_DS(on) (4.5 mΩ @ 4.5 V), lower Q_g (29 nC), same D-Pak package	Better suited for lower-current (<40 A) applications where gate drive power is constrained	Select when prioritizing gate drive efficiency over conduction loss in space-limited designs
SI7850DP-T1-GE3	Lower R_DS(on) (1.8 mΩ @ 4.5 V), higher Q_g (52 nC), same footprint but different pinout (G-D-S vs G-S-D)	Requires PCB layout revision; superior conduction loss but demands stronger gate driver	Choose only if board redesign is feasible and conduction loss dominates system thermal budget

Compared with IRLR3714PBF and SI7850DP-T1-GE3, the IRLR8743PBF offers optimal balance of low R_DS(on), moderate gate charge, and proven avalanche ruggedness - making it preferred for high-reliability, medium-to-high current synchronous rectification without layout changes.

Availability

IRLR8743PBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom 48 V DC-DC converters, and industrial PLC power modules requiring stable component supply and long-term production continuity.

Supply support for IRLR8743PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The HEXFET Power MOSFET product line targets high-efficiency, high-frequency power conversion in computing, telecom, and industrial applications - emphasizing low gate charge, avalanche ruggedness, and thermal performance in surface-mount packages.

FAQ

Is IRLR8743PBF suitable for 3.3 V gate drive?

No - the gate threshold voltage (V_GS(th)) ranges from 1.35 V to 2.35 V, but full enhancement requires ≥4.5 V for specified R_DS(on). At 3.3 V, R_DS(on) rises significantly (>10 mΩ), increasing conduction loss and thermal stress. It is rated for logic-level drive at 4.5 V and above, not true 3.3 V operation.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies 68 A continuous drain current (I_D) at T_C = 100°C and V_GS = 10 V. Derating follows the linear factor of 1.11 W/°C above 100°C, and actual usable current depends on PCB copper area, airflow, and thermal interface to heatsink or ground plane.

Does IRLR8743PBF have a built-in ESD protection diode on the gate?

No - the device does not integrate gate ESD protection. The absolute maximum V_GS rating is ±20 V, and gate oxide is susceptible to damage from static discharge. External gate protection (e.g., 12 V Zener clamp between gate and source) is recommended in handling and PCB layout per IRF application note AN-994.

Can IRLR8743PBF replace IRLU8743PBF in a design?

Yes - both share identical die and electrical specs, differing only in package: IRLR8743PBF uses D-Pak (TO-252) with drain-connected tab, while IRLU8743PBF uses I-Pak (TO-251) with isolated tab. Mechanical mounting and thermal path differ; PCB footprint and solder stencil must be updated, but no circuit or layout redesign is needed beyond pad adaptation.

IRLR8743PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4880 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 135W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR8743PBF FAQ

1.How can I place an order for IRLR8743PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8743PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8743PBF reliable?

The price and inventory of IRLR8743PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8743PBF is usually 5 days.

3.What payment methods are accepted for IRLR8743PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8743PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR8743PBF?

IRLR8743PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8743PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8743PBF?

For technical support, including IRLR8743PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8743PBF requirements.

6.How does Aetrix verify that IRLR8743PBF is sourced from the original manufacturer or authorized distributors?

All IRLR8743PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8743PBF meets industry standards.

7.What is the process for return or replacement of IRLR8743PBF?

All IRLR8743PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8743PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8743PBF part is unused and in its original packaging.

Return procedure for IRLR8743PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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