Infineon Technologies IRLR9343TRLPBF
- Part No.:
- IRLR9343TRLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR9343TRLPBF.pdf
- Description:
- MOSFET P-CH 55V 20A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:5,844
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Product details
Overview
IRLR9343TRLPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET designed for high-efficiency Class-D audio amplifier output stages. It delivers 93 mΩ RDS(on) at VGS = −10 V, 31 nC total gate charge, and −55 V VDS, enabling low conduction loss and optimized switching performance in bridge-tied load (BTL) configurations.
For engineers reviewing the IRLR9343TRLPBF datasheet, IRLR9343TRLPBF pinout, IRLR9343TRLPBF application, or IRLR9343TRLPBF equivalent, key selection criteria include body-diode reverse recovery charge (Qrr = 120–180 nC), low Qg/Qsw for THD reduction, repetitive avalanche rating (EAS = 500 mJ), 175°C TJ rating, and D-Pak thermal resistance (RθJC = 1.9°C/W).
Technical Context
This MOSFET employs advanced trench-gate HEXFET® processing to minimize on-resistance per die area while optimizing gate charge distribution and internal gate resistance. Its low Qgd/Qgs ratio and controlled Crss (72 pF) reduce Miller-induced switching oscillation and EMI in high-frequency Class-D switching nodes.
The integrated body diode features fast reverse recovery (trr = 57–86 ns) and low forward voltage (VSD = −1.2 V), critical for minimizing shoot-through losses and crossover distortion in complementary half-bridge topologies operating up to 500 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −55 V - Supports rail voltages up to ±27.5 V in BTL amplifiers with margin against transient overvoltage |
| RDS(on) @ VGS = −10 V | 93 mΩ typ. - Enables ≤1.3 W conduction loss at 3.7 A RMS output current in 4 Ω load |
| Qg | 31 nC typ. - Reduces gate drive power and enables efficient operation with low-side gate drivers like IRS2092S |
| Qrr | 120–180 nC - Minimizes body-diode commutation loss and associated THD in hard-switched Class-D outputs |
| TJ max | 175°C - Allows sustained operation under high ambient conditions without derating in compact heatsink designs |
| RθJC | 1.9°C/W - Enables direct mounting to copper pour or heatsink for >40 W continuous power dissipation |
| EAS | 500 mJ - Withstands single-pulse inductive energy from speaker cable inductance during fault events |
Pinout & Package
IRLR9343TRLPBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package supports PCB-mounted thermal dissipation and is RoHS-compliant and lead-free (PbF).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Common return path for load current; tied to ground or negative rail in high-side switch configuration |
| Pin 2 (Gate) | Control input (G) | Receives PWM signal; requires <10 Ω series gate resistor to damp ringing due to low Qgd |
| Pin 3 (Drain) | Power output (D) | Connected to speaker load via LC filter; electrically and thermally coupled to exposed copper pad |
Key Features
| Feature | Design Value |
|---|---|
| Optimized Qg/Qsw ratio | Enables clean turn-on/turn-off transitions at 300–500 kHz, reducing THD+N below 0.05% in 100 W BTL amplifiers |
| Low Qrr and fast trr | Reduces diode recovery-induced voltage spikes and EMI emissions during dead-time intervals |
| 175°C rated junction temperature | Eliminates need for thermal derating in sealed enclosures with ambient up to 85°C |
| Repetitive avalanche capability | Withstands repeated inductive kickback from speaker loads without parameter shift or failure |
Applications
| High-Fidelity Home Audio Amplifiers | Automotive Subwoofer Modules |
|---|---|
Use Scenario: Dual-channel Class-D amplifier driving 4 Ω bookshelf speakers with 20 Hz–20 kHz bandwidth. IC Role / Device Role / Timing Role: Output stage high-side switch in half-bridge topology; switches at 350 kHz with 50 ns dead time. Use Value: 93 mΩ RDS(on) and 31 nC Qg enable >92% efficiency at 50 W output, reducing heatsink size by 40% vs. legacy MOSFETs. | Use Scenario: Compact 200 W subwoofer amplifier mounted behind vehicle rear seat with limited airflow. IC Role / Device Role / Timing Role: Low-side switch in BTL configuration; handles peak currents up to −60 A during bass transients. Use Value: 175°C TJ rating and 1.9°C/W RθJC allow full power operation at 85°C ambient without thermal shutdown. |
| Professional PA System Output Stages | Active Studio Monitor Power Sections |
Use Scenario: 500 W Class-D module in line-array loudspeaker with forced-air cooling. IC Role / Device Role / Timing Role: High-current output device in paralleled dual-MOSFET configuration; driven by IRS20957S gate driver. Use Value: Repetitive avalanche rating ensures reliability during clipping events and short-circuit testing per IEC 60268-5. | Use Scenario: Bi-amplified near-field monitor with separate 100 W LF and 50 W HF channels. IC Role / Device Role / Timing Role: P-channel device used in complementary output pair with N-channel IRLR8726PBF for symmetrical slew rate. Use Value: Matched Qrr and trr between complementary devices minimizes crossover distortion and improves IMD performance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel Class-D audio MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR9342PBF | RDS(on) = 110 mΩ @ −10 V; Qg = 27 nC; lower avalanche energy (EAS = 350 mJ) | Suitable for <100 W designs where thermal margin is less constrained | Select when lower gate charge outweighs need for higher current handling |
| STP12PF06 | RDS(on) = 120 mΩ @ −10 V; Qrr = 220 nC; no specified repetitive avalanche rating | Better cost-performance for non-critical consumer audio; higher THD risk above 200 W | Prefer for cost-sensitive mass-market receivers where EMI filtering budget allows |
Compared with IRLR9343TRLPBF, IRLR9342PBF trades 15% higher conduction loss for slightly faster switching, while STP12PF06 lacks documented avalanche robustness-making IRLR9343TRLPBF the preferred choice for professional-grade, thermally constrained, or high-reliability Class-D outputs.
Availability
IRLR9343TRLPBF is available at Aetrix Electronics and suitable for high-fidelity home audio amplifiers, automotive subwoofer modules, and professional PA system output stages requiring stable component supply and long-term production continuity.
Supply support for IRLR9343TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.
The HEXFET® product line was engineered specifically for high-efficiency, high-reliability power conversion-including Class-D audio, motor drives, and DC-DC converters-emphasizing low RDS(on), controlled switching behavior, and rugged thermal design.
FAQ
What is the maximum continuous drain current for IRLR9343TRLPBF at 100°C case temperature?
The maximum continuous drain current is −39 A at TC = 100°C with VGS = −10 V, as specified in the Absolute Maximum Ratings table. This value assumes adequate PCB copper area for thermal conduction and accounts for RDS(on) increase with junction temperature.
Does IRLR9343TRLPBF require a negative gate drive voltage?
Yes-this is a P-channel MOSFET requiring a gate-to-source voltage (VGS) more negative than the source to turn on. For full enhancement, VGS ≤ −10 V is recommended; logic-level operation begins at VGS(th) = −1.0 V typical, but RDS(on) remains high below −4.5 V.
Can IRLR9343TRLPBF be used in synchronous rectification applications?
No-it is not optimized for synchronous rectification. Its body diode has relatively high VSD (−1.2 V) and Qrr, and its gate charge profile favors Class-D switching rather than low-loss bidirectional conduction. Use dedicated SR controllers with N-channel MOSFETs instead.
Is the D-Pak package of IRLR9343TRLPBF compatible with standard reflow profiles for lead-free assembly?
Yes-the part is RoHS-compliant and lead-free (PbF), qualified for JEDEC J-STD-020D reflow profiles with peak temperature up to 260°C. The exposed drain pad must be soldered to ≥100 mm² of 2-oz copper for thermal compliance and mechanical reliability.
IRLR9343TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 105mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 660 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 79W (Tc)
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR9343TRLPBF FAQ
1.How can I place an order for IRLR9343TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR9343TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR9343TRLPBF reliable?
The price and inventory of IRLR9343TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR9343TRLPBF is usually 5 days.
3.What payment methods are accepted for IRLR9343TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR9343TRLPBF transactions.
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4.How is shipping managed for IRLR9343TRLPBF?
IRLR9343TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR9343TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR9343TRLPBF?
For technical support, including IRLR9343TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR9343TRLPBF requirements.
6.How does Aetrix verify that IRLR9343TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRLR9343TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR9343TRLPBF meets industry standards.
7.What is the process for return or replacement of IRLR9343TRLPBF?
All IRLR9343TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR9343TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR9343TRLPBF part is unused and in its original packaging.
Return procedure for IRLR9343TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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