Infineon Technologies IRLS3034-7PPBF

Overview

IRLS3034-7PPBF from Infineon Technologies is a logic-level N-channel HEXFET Power MOSFET in D2PAK-7L package, rated for 40V V_DSS, 1.0 mΩ typical R_DS(on) at 4.5V V_GS, and 240A package-limited continuous drain current. It serves as a high-current synchronous rectifier or primary-side switch in hard-switched DC-DC converters and UPS inverters.

For engineers reviewing the IRLS3034-7PPBF datasheet, IRLS3034-7PPBF pinout, IRLS3034-7PPBF application, or IRLS3034-7PPBF equivalent, key selection criteria include its 1.0 mΩ on-resistance at logic-level gate drive, 120 nC total gate charge, 2030 pF output capacitance, robust 250 mJ single-pulse avalanche energy, and validated body diode recovery (t_rr = 46 ns at 25°C).

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted source metallization to achieve ultra-low R_DS(on) while maintaining high dV/dt immunity (≥2.5 V/ns) and enhanced body diode ruggedness. Its gate threshold voltage (1.0–2.5 V) ensures reliable turn-on with 3.3V/5V microcontroller outputs.

The device features fully characterized SOA curves up to 10 ms, C_{oss eff}(TR) = 3060 pF for switching loss modeling, and thermally limited EAS = 250 mJ at T_J = 25°C - enabling use in unclamped inductive switching without external snubbers.

Key Specifications

Pinout & Package

IRLS3034-7PPBF uses the D2PAK-7L (TO-263-7) surface-mount package with exposed drain pad for thermal performance. The 7-pin configuration integrates dual-source terminals and Kelvin source sensing for accurate gate control under high di/dt.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Compared with IRLS3034-7PPBF, IRL1404ZPBF trades off on-resistance and thermal capability for lower gate charge and cost, while IPB180N04S4-02 offers integrated sensing at the expense of higher conduction loss - making IRLS3034-7PPBF optimal for highest-efficiency, high-current logic-driven switching where Kelvin source accuracy is critical.

Availability

IRLS3034-7PPBF is available at Aetrix Electronics and suitable for DC motor drives, high-efficiency synchronous rectifiers, and uninterruptible power supplies requiring stable component supply across long production lifecycles.

Supply support for IRLS3034-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® logic-level Power MOSFET product line, engineered specifically for high-current, high-frequency switching in server PSUs, telecom infrastructure, and industrial motor drives where low gate drive voltage and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current for IRLS3034-7PPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 270 A (silicon-limited) per the Absolute Maximum Ratings table. However, the package-limited rating remains 240 A regardless of temperature, as bond wire current capacity does not improve with cooling. Derating curves in Figure 9 confirm this limit holds across the full operating range.

Does IRLS3034-7PPBF support Kelvin source connection, and how is it implemented physically?

Yes - pin 7 is the dedicated Kelvin source terminal, electrically isolated from the main source (pin 6) and internally connected only to the gate driver reference node. It is routed separately on the die to avoid IR drop from high-current paths, enabling precise gate-to-source voltage control during high di/dt switching events.

How is the 250 mJ single-pulse avalanche energy (E_AS) tested and what circuit conditions apply?

E_AS is measured per JEDEC JESD24-1 using an unclamped inductive test circuit (Fig. 22a/b): L = 0.010 mH, R_G = 25 Ω, I_AS = 220 A, V_GS = 10 V, starting T_J = 25°C. The energy is calculated as ∫v(t)·i(t)dt during the avalanche event, with failure defined as permanent parametric shift exceeding limits after stress.

Can IRLS3034-7PPBF be used in parallel configurations, and what layout considerations are critical?

Yes - its positive temperature coefficient of R_DS(on) (see Fig. 4) enables stable current sharing. Critical layout requirements include symmetrical gate trace lengths with individual 2.7 Ω gate resistors, mirrored source/drain copper pours, and Kelvin source routing separate from power source to prevent oscillation. Thermal coupling via shared heatsink is recommended.