Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLS3034PBF

Name: IRLS3034PBF
Brand: Infineon Technologies
SKU: IRLS3034PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLS3034PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRLS3034PBF.pdf

Description:: MOSFET N-CH 40V 195A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,137

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLS3034PBF from Infineon Technologies is a logic-level N-channel HEXFET Power MOSFET in D2PAK (TO-262) package, rated for 40V V_DSS, 1.4 mΩ typical R_DS(on) at V_GS = 4.5V, and 195A package-limited continuous drain current. It serves as a high-current synchronous rectifier or hard-switched power switch in DC motor drives and uninterruptible power supplies.

For engineers reviewing the IRLS3034PBF datasheet, IRLS3034PBF pinout, IRLS3034PBF application, or IRLS3034PBF equivalent, key selection criteria include its 1.4 mΩ on-resistance at 4.5V gate drive, 108 nC total gate charge, 195A package-limited current, enhanced body diode dV/dt ruggedness, and SOA-validated avalanche capability up to 255 mJ.

Technical Context

This MOSFET employs planar silicon-gate technology optimized for low-voltage, high-current switching with logic-level gate compatibility. Its internal gate resistance is 2.1 Ω, and it features fully characterized C_iss (10,315 pF), C_oss (1980 pF), and C_rss (935 pF) for accurate hard-switching loss modeling.

The device integrates an intrinsic fast-recovery body diode with t_rr = 39 ns (T_J = 25°C), Q_rr = 39 nC, and dI/dt capability up to 841 A/µs - enabling robust operation in synchronous rectification and unclamped inductive switching circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche onset; suitable for 36V nominal bus systems.
R_DS(on) @ 4.5V	1.4 mΩ typ. - Enables <1.3 W conduction loss at 195A, critical for high-efficiency SMPS output stages.
I_D (Package)	195 A - Thermal and mechanical limit defined by D2PAK copper tab and solder joint reliability.
Q_g	108 nC - Gate drive energy requirement determines driver sizing and switching loss at 100–500 kHz.
E_AS	255 mJ - Single-pulse avalanche energy rating supports reliable operation under inductive fault conditions.
t_rr	39 ns - Fast reverse recovery minimizes commutation losses and ringing in synchronous rectifiers.
R_θJC	0.4 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for high-power dissipation.

Pinout & Package

IRLS3034PBF uses the D2PAK (TO-262) surface-mount package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in standard S-D-G configuration: Source (pins 1–3), Drain (tab), Gate (pin 4).

Pin/Terminal	Circuit Role	Design Meaning
Source (Pins 1–3)	Power return path and reference node	Low-inductance parallel connection reduces source inductance and improves switching stability.
Drain (Exposed Pad)	Main current-carrying terminal and thermal interface	Directly soldered to PCB copper pour or heatsink; carries full load current and dissipates >95% of heat.
Gate (Pin 4)	Control input for channel conduction	Logic-compatible threshold (1.0–2.5 V); requires <110 nC charge for full enhancement at 4.5 V.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS = 4.5 V, compatible with 3.3 V and 5 V microcontrollers without level-shifting.
Ultra-low R_DS(on)	1.4 mΩ typ. at 4.5 V enables <1.3 W conduction loss at 195 A, reducing thermal design burden.
Enhanced body diode ruggedness	Rated for dV/dt ≥ 2.5 V/ns and dI/dt ≤ 841 A/µs - supports reliable hard-commutation in LLC and phase-shifted topologies.
SOA-characterized avalanche	255 mJ single-pulse E_AS validated per JEDEC JESD24-1; allows safe operation during transient overcurrent events.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1; suitable for lead-free reflow assembly.

Applications

DC Motor Drive

High-Efficiency Synchronous Rectification

Use Scenario: Bidirectional 24–48V brushed DC motor control in industrial actuators and robotic joints.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling peak currents up to 195A with <100 ns switching transitions.

Use Value: 1.4 mΩ R_DS(on) reduces I²R losses by >40% versus comparable 2.5 mΩ MOSFETs, extending battery runtime and lowering heatsink mass.

Use Scenario: Secondary-side synchronous rectifier in 48V-output telecom and server SMPS with 300–500 kHz switching frequency.

IC Role / Device Role / Timing Role: Low-V_F active rectifier replacing Schottky diodes; body diode conducts during dead-time, channel conducts during active period.

Use Value: 39 ns t_rr and 39 nC Q_rr minimize reverse recovery loss and EMI generation, improving efficiency by 0.8–1.2% at full load.

Uninterruptible Power Supply (UPS)

Hard-Switched High-Frequency Inverter

Use Scenario: Output H-bridge stage in online double-conversion UPS delivering 1–5 kVA at 50/60 Hz with battery backup.

IC Role / Device Role / Timing Role: Bidirectional power switch supporting both AC line and battery-fed inverter operation with bidirectional current flow.

Use Value: Enhanced body diode dI/dt rating (841 A/µs) ensures reliable freewheeling during zero-crossing transitions without oscillation or latch-up.

Use Scenario: Full-bridge primary switch in high-frequency resonant inverters for induction heating and plasma generation (100–300 kHz).

IC Role / Device Role / Timing Role: Fast-turning, avalanche-rated switch managing high dv/dt stress and unclamped inductive energy during ZVS/ZCS transitions.

Use Value: 255 mJ E_AS and 0.4 °C/W R_θJC allow sustained operation under repetitive partial avalanche conditions without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 3.7 mΩ @ 4.5V; I_D = 160A; smaller TO-220 package; lower Q_g (62 nC)	Limited to ≤120A continuous due to thermal resistance; unsuitable for 195A synchronous rectifier legs	Select when board space is constrained and peak current stays below 140A; avoid where R_DS(on) < 2.0 mΩ is required.
STL220N4F7AG	R_DS(on) = 1.25 mΩ @ 4.5V; I_D = 220A; D²PAK package; higher Q_g (135 nC); no published E_AS rating	Superior conduction loss but lacks validated avalanche SOA data; body diode t_rr not specified	Prefer for pure conduction-limited designs with robust gate drivers; avoid in unclamped inductive or fault-prone environments.

Compared with IRLS3034PBF, IRL1404ZPBF trades conduction efficiency for compactness and lower gate drive demand, while STL220N4F7AG offers lower R_DS(on) but lacks documented avalanche ruggedness - making IRLS3034PBF the balanced choice for mission-critical high-current switching with fault tolerance.

Availability

IRLS3034PBF is available at Aetrix Electronics and suitable for DC motor drives, high-efficiency synchronous rectification in SMPS, and uninterruptible power supply output stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRLS3034PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRLS3034PBF belongs to Infineon's logic-level HEXFET Power MOSFET product line, engineered for high-current, low-voltage switching in space-constrained and thermally demanding applications such as motor drives and server power supplies.

FAQ

What is the maximum continuous drain current for IRLS3034PBF at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 243 A (silicon-limited) per the Absolute Maximum Ratings table. However, the package-limited rating remains 195 A across all temperatures - this is the practical upper limit dictated by thermal resistance and solder joint reliability, not silicon capability.

Does IRLS3034PBF have a specified avalanche current rating (I_AR)?

Yes - the datasheet specifies I_AR = 375 A for repetitive avalanche under defined test conditions: L = 0.013 mH, R_G = 25 Ω, V_GS = 10 V, and T_J starting at 25°C. This rating is tied to the 255 mJ single-pulse E_AS and must be applied with strict duty-cycle and thermal management controls.

Can IRLS3034PBF be used with 3.3 V microcontroller GPIOs without a gate driver?

Yes - its V_GS(th) range is 1.0–2.5 V, and R_DS(on) is fully specified at 4.5 V. While it will conduct at 3.3 V, R_DS(on) rises to ~2.0 mΩ (extrapolated from Fig. 4), increasing conduction loss by ~40%. For optimal efficiency, a 5 V gate driver is recommended; for space-constrained low-power use, direct 3.3 V drive is functional but suboptimal.

What is the recommended PCB layout for thermal performance of IRLS3034PBF?

Mount the D2PAK drain pad directly to ≥2 in² of 2-oz copper on an inner layer, using ≥8 thermal vias (0.3 mm diameter) connecting to solid ground or power planes. Maintain ≥1.5 mm clearance between gate trace and high-dv/dt nodes. Follow IR Application Note AN-994 for footprint dimensions, solder mask opening, and reflow profile - especially critical for void-free solder joint formation under the exposed pad.

IRLS3034PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 195A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 162 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10315 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRLS3034PBF FAQ

1.How can I place an order for IRLS3034PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLS3034PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLS3034PBF reliable?

The price and inventory of IRLS3034PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLS3034PBF is usually 5 days.

3.What payment methods are accepted for IRLS3034PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLS3034PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLS3034PBF?

IRLS3034PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLS3034PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLS3034PBF?

For technical support, including IRLS3034PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLS3034PBF requirements.

6.How does Aetrix verify that IRLS3034PBF is sourced from the original manufacturer or authorized distributors?

All IRLS3034PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLS3034PBF meets industry standards.

7.What is the process for return or replacement of IRLS3034PBF?

All IRLS3034PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLS3034PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLS3034PBF part is unused and in its original packaging.

Return procedure for IRLS3034PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…