Infineon Technologies IRLS3036PBF

Overview

IRLS3036PBF from Infineon Technologies is a logic-level N-channel HEXFET Power MOSFET in D²PAK (TO-262) package, rated for 60 V V_DS, 2.4 mΩ max R_DS(on) at 4.5 V V_GS, and 195 A package-limited continuous drain current. It integrates an optimized body diode for synchronous rectification and is used in high-current DC motor drives and hard-switched SMPS outputs.

For engineers reviewing the IRLS3036PBF datasheet, IRLS3036PBF pinout, IRLS3036PBF application, or IRLS3036PBF equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 1.9 mΩ typical R_DS(on), 91 nC total gate charge, avalanche-rated 1100 mJ E_AS, and D²PAK thermal performance with 0.40 °C/W R_θJC.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted source metallization to achieve ultra-low R_DS(on) while maintaining robust dV/dt immunity (>2.5 V/ns) and enhanced body diode dI/dt capability (up to 430 A/µs). Its gate threshold voltage (1.0–2.5 V) ensures reliable turn-on with standard 3.3 V or 4.5 V controllers.

The device features fully characterized C_iss (11,210 pF), C_oss (1020 pF), and C_rss (500 pF) with energy-related C_{oss eff.(ER)} = 1430 pF - critical for ZVS/ZCS design in high-frequency SMPS. Avalanche SOA is thermally validated up to 165 A and 1100 mJ single-pulse energy at T_J = 25°C.

Key Specifications

Pinout & Package

IRLS3036PBF uses the D²PAK (TO-262) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 10.16 × 15.88 mm (0.400 × 0.625 in) and requires minimum 1.6 mm clearance from case for soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Compared with IRLS3036PBF, IRL1404ZPBF trades 42% higher conduction loss for lower cost and simpler mounting, while STL220N6F7 improves R_DS(on) by 11% but demands advanced PCB thermal design - making IRLS3036PBF optimal for medium-to-high-power D²PAK-based platforms balancing performance, serviceability, and thermal reliability.

Availability

IRLS3036PBF is available at Aetrix Electronics and suitable for DC motor drives, high-efficiency synchronous rectification in SMPS, and uninterruptible power supply (UPS) inverters requiring stable component supply across production lifecycles.

Supply support for IRLS3036PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRLS3036PBF belongs to Infineon's HEXFET® logic-level power MOSFET product line, engineered specifically for high-current, low-voltage switching applications demanding minimal gate drive voltage and superior ruggedness in harsh electrical environments.

FAQ

Is IRLS3036PBF suitable for 3.3 V microcontroller gate drive?

Yes - its gate threshold voltage range (1.0–2.5 V) and guaranteed R_DS(on) at 4.5 V V_GS ensure robust enhancement with 3.3 V logic when paired with a gate driver buffer or low-impedance trace. However, full 195 A current capability requires ≥4.5 V to achieve specified 2.4 mΩ on-resistance.

What is the maximum recommended PCB copper area for the D²PAK drain pad?

Infineon recommends ≥400 mm² (0.62 in²) of 2-oz copper connected via ≥9 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner ground planes. This achieves the rated 0.40 °C/W R_θJC; smaller areas increase junction temperature and reduce safe operating current.

Does IRLS3036PBF require external gate resistors in hard-switched circuits?

Yes - a series gate resistor (2.1 Ω typical) is required to control dv/dt, suppress oscillation, and limit peak gate current. Without it, parasitic inductance can cause gate ringing exceeding ±16 V absolute maximum, risking gate oxide damage during fast switching.

Can IRLS3036PBF replace IRL3036 in existing designs?

No - IRL3036 is obsolete and packaged in TO-220, whereas IRLS3036PBF uses D²PAK with different thermal and mechanical interfaces. While electrically similar, the package change requires PCB layout revision, thermal validation, and gate drive impedance recalculation due to lower gate resistance and higher current capability.