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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLS3036TRRPBF

Name: IRLS3036TRRPBF
Brand: Infineon Technologies
SKU: IRLS3036TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLS3036TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRLS3036TRRPBF.pdf

Description:: MOSFET N-CH 60V 195A D2PAK

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Product details

Overview

IRLS3036TRRPBF from Infineon Technologies is a logic-level N-channel HEXFET Power MOSFET in D2PAK (TO-263) package, rated for 60 V V_DS, 2.4 mΩ max R_DS(on) at 4.5 V V_GS, and 195 A package-limited continuous drain current. It serves as a high-current synchronous rectifier or main switch in hard-switched DC-DC converters and UPS systems.

For engineers reviewing the IRLS3036TRRPBF datasheet, IRLS3036TRRPBF pinout, IRLS3036TRRPBF application, or IRLS3036TRRPBF equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 1.9 mΩ typical R_DS(on), 91 nC total gate charge, 1020 pF C_oss, and enhanced body diode dV/dt ruggedness for high-frequency SMPS designs.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve ultra-low on-resistance at low gate voltages. Its gate threshold voltage (1.0–2.5 V) and 2.0 Ω internal gate resistance support direct microcontroller drive without level-shifting.

The device integrates an intrinsic fast-recovery body diode characterized for 62 ns reverse recovery time (T_J = 25°C) and 310 nC Q_rr, enabling robust operation in synchronous rectification where diode conduction and commutation stress are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V bus systems and industrial 24–48 V input SMPS.
R_DS(on) max @ 4.5 V	2.4 mΩ - Enables <1.2 W conduction loss at 140 A, critical for high-efficiency synchronous rectifiers.
I_D (package-limited)	195 A - Determined by D2PAK thermal and bond-wire limits; defines maximum steady-state PCB-mount current.
Q_g	91 nC - Total gate charge value directly impacts switching loss and driver sizing in 100–500 kHz hard-switched topologies.
C_oss	1020 pF - Output capacitance affecting turn-off energy and resonant behavior during ZVS transitions.
V_SD max	1.3 V - Forward voltage of integrated body diode, influencing dead-time losses and shoot-through risk in half-bridge configurations.
E_AS	1100 mJ - Single-pulse avalanche energy rating supporting unclamped inductive switching in motor drive fault conditions.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal enhancement; 3-pin configuration (G-D-S) with drain connected to tab.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–16 V logic-level signals; 2.0 Ω internal resistance reduces ringing but requires ≥1 A peak driver capability for fast switching.
D (Drain)	High-side power terminal	Internally connected to metal tab; must be soldered to large copper pour for R_θJC = 0.40 °C/W thermal path.
S (Source)	Power return / reference node	Common return for gate drive and load current; low-inductance layout essential to minimize V_GS noise during dI/dt > 430 A/µs.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at 4.5 V V_GS, eliminating need for gate driver ICs in MCU-based 3.3 V/5 V control systems.
Enhanced body diode dV/dt immunity	Rated for >2.5 V/ns diode recovery dv/dt, preventing false turn-on during high-speed commutation in synchronous buck converters.
Optimized R × Q_g product	1.9 mΩ × 91 nC = 173 mΩ·nC - balances conduction and switching loss for 200–400 kHz SMPS operating points.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020D reflow profile; qualified for 260 °C peak temperature (10 s).
Characterized SOA and avalanche	Full Safe Operating Area curves provided up to 10 ms pulse width; avalanche tested per JEDEC JESD24-11 with 100% production screening.

Applications

DC Motor Drive

High-Efficiency Synchronous Rectification

Use Scenario: Brushless DC motor inverter stage for industrial automation, requiring bidirectional current handling and PWM switching at 20–50 kHz.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter leg, conducting up to 195 A peak phase current with minimal conduction loss.

Use Value: 2.4 mΩ R_DS(on) reduces I²R heating under stall conditions, while 1100 mJ E_AS withstands regenerative energy spikes during emergency stops.

Use Scenario: Secondary-side synchronous rectifier in 48 V input telecom DC-DC brick (e.g., 48 V to 12 V), operating at 300 kHz with tight thermal constraints.

IC Role / Device Role / Timing Role: High-current, low-V_F replacement for Schottky diodes, actively controlled to eliminate forward drop during conduction.

Use Value: 1.3 V V_SD and 62 ns t_rr minimize reverse recovery loss and enable shorter dead times, improving efficiency by 1.2–1.8% over discrete diode solutions.

Uninterruptible Power Supply

Hard-Switched High-Frequency Inverters

Use Scenario: Bidirectional DC link switch in online UPS systems converting battery DC to 230 V AC via full-bridge inverter, operating at 16–20 kHz.

IC Role / Device Role / Timing Role: Main power switch in H-bridge output stage, handling 195 A surge currents during load transients and short-circuit events.

Use Value: 195 A package-limited current and 0.40 °C/W R_θJC allow sustained operation at 150 A with ≤85 °C case temperature on standard 2 oz copper PCBs.

Use Scenario: Primary-side switch in LLC resonant converter for server PSUs, requiring fast switching with low Q_gd/Q_gs ratio to reduce Miller-induced turn-off delay.

IC Role / Device Role / Timing Role: High-frequency hard-switched transistor with 51 nC Q_gd and 31 nC Q_gs, enabling clean zero-voltage switching transitions up to 700 kHz.

Use Value: 51 nC Miller charge and 1880 pF C_oss(TR) support predictable turn-off timing and reduced voltage overshoot during high-dI/dt transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	60 V, 3.0 mΩ max R_DS(on) @ 4.5 V, TO-220 package, 140 A package limit	Limited to lower current density; lacks D2PAK thermal performance and avalanche rating	Choose only if through-hole mounting and lower cost outweigh thermal and ruggedness requirements.
STL220N6F7	60 V, 1.7 mΩ typ R_DS(on) @ 4.5 V, PowerFLAT 8x8 package, 160 A rating	Superior R_DS(on) but smaller thermal footprint; no specified E_AS or dV/dt rating	Select when board space is constrained and avalanche robustness is not required in final system design.

Compared with IRLS3036TRRPBF, IRL3803PbF trades higher R_DS(on) and lower current capacity for legacy package compatibility, while STL220N6F7 offers lower on-resistance in a compact footprint but omits documented avalanche and diode dV/dt specifications critical for UPS and motor drive reliability.

Availability

IRLS3036TRRPBF is available at Aetrix Electronics and suitable for DC motor drives, high-efficiency synchronous rectification in SMPS, and uninterruptible power supply systems requiring stable component supply and long-term industrial availability.

Supply support for IRLS3036TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the HEXFET® logic-level Power MOSFET product line, engineered for high-current, low-voltage switching in energy-efficient power conversion systems where gate drive simplicity and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for IRLS3036TRRPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 110 A, derived from linear derating of the 195 A rating at 25°C using the 1.1 W/°C derating factor. This value reflects package thermal limits-not silicon capability-and assumes proper PCB copper area and airflow per IR Application Note AN-994.

Does IRLS3036TRRPBF support gate drive from a 3.3 V microcontroller without a level shifter?

Yes-its gate threshold voltage range (1.0–2.5 V) and guaranteed R_DS(on) at 4.5 V V_GS ensure reliable enhancement with 3.3 V logic when paired with a low-impedance driver capable of delivering ≥1 A peak current. However, full 195 A conduction requires V_GS ≥ 4.5 V to achieve 2.4 mΩ R_DS(on).

How is the body diode performance characterized for synchronous rectification?

The body diode is fully characterized for reverse recovery: t_rr = 62 ns (T_J = 25°C), Q_rr = 310 nC, and I_RRM = 4.4 A. These values are measured at V_R = 51 V, I_F = 165 A, and di/dt = 100 A/µs, confirming suitability for high-frequency synchronous rectification with minimized recovery loss.

What thermal interface requirements apply to the D2PAK drain tab?

The exposed drain tab must be soldered to ≥4 cm² of 2 oz copper on the primary side of the PCB, with ≥6 thermal vias (0.3 mm diameter, filled) connecting to inner/secondary ground planes. This achieves the specified R_θJC = 0.40 °C/W; insufficient copper area increases junction temperature by >25°C at 150 A.

IRLS3036TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 165A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 11210 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 380W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRLS3036TRRPBF FAQ

1.How can I place an order for IRLS3036TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLS3036TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLS3036TRRPBF reliable?

The price and inventory of IRLS3036TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLS3036TRRPBF is usually 5 days.

3.What payment methods are accepted for IRLS3036TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLS3036TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLS3036TRRPBF?

IRLS3036TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLS3036TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLS3036TRRPBF?

For technical support, including IRLS3036TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLS3036TRRPBF requirements.

6.How does Aetrix verify that IRLS3036TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRLS3036TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLS3036TRRPBF meets industry standards.

7.What is the process for return or replacement of IRLS3036TRRPBF?

All IRLS3036TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLS3036TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLS3036TRRPBF part is unused and in its original packaging.

Return procedure for IRLS3036TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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