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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLS3813PBF

Name: IRLS3813PBF
Brand: Infineon Technologies
SKU: IRLS3813PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLS3813PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRLS3813PBF.pdf

Description:: MOSFET N-CH 30V 160A D2PAK

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Product details

Overview

IRLS3813PBF from Infineon Technologies (formerly International Rectifier) is a 30V, 1.60 mΩ typ. N-channel enhancement-mode Power MOSFET in D2Pak (TO-263AB) package, rated for 160A continuous drain current (package-limited) and 247A silicon-limited operation at TC = 25°C. It features fully characterized avalanche SOA, enhanced body diode dV/dt (2.2 V/ns) and dI/dt capability, and is optimized for high-efficiency synchronous rectification and motor drive applications.

For engineers reviewing the IRLS3813PBF datasheet, IRLS3813PBF pinout, IRLS3813PBF application, or IRLS3813PBF equivalent, key selection criteria include its ultra-low R_DS(on), robust unclamped inductive switching performance (E_AS = 177 mJ), fast switching dynamics (Q_g = 55 nC typ.), and thermal resistance of 0.64 °C/W (junction-to-case).

Technical Context

This MOSFET employs planar HEXFET® technology with optimized gate oxide and source bonding to achieve sub-2 mΩ on-resistance while maintaining high pulsed current capability (I_DM = 850 A) and thermally stable avalanche performance. Its body diode is engineered for soft recovery (t_rr = 32 ns, Q_rr = 24 nC at T_J = 25°C) and high dv/dt immunity.

The device operates with a gate threshold voltage range of 1.35–2.35 V and exhibits low gate resistance (R_G = 0.9 Ω typ.), enabling fast turn-on/turn-off (t_d(on) = 32 ns, t_f = 102 ns) under standard 4.5 Ω gate drive. Its C_iss = 8020 pF and C_oss = 1250 pF support high-frequency switching in resonant and hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche onset; enables use in 24V battery systems and 12V/24V DC/DC converters.
R_DS(on) typ.	1.60 mΩ @ V_GS = 10 V, I_D = 148 A - Delivers <1.5 W conduction loss at 148 A, critical for high-current synchronous rectifiers.
I_D (Package Limited)	160 A @ T_C = 25°C - Determined by leadframe and bond-wire thermal limits; defines practical continuous current in PCB-mounted designs.
E_AS	177 mJ - Single-pulse avalanche energy (L = 16 µH, I_AS = 148 A); supports reliable operation in unclamped inductive switching (e.g., motor freewheeling).
Q_g	55 nC typ. - Total gate charge required for full enhancement; determines gate driver power and switching speed in high-frequency PWM stages.
t_r/t_f	202 ns / 102 ns - Rise/fall times at I_D = 148 A, R_G = 4.5 Ω; enables efficient operation up to ~200 kHz in hard-switched converters.
V_SD	1.3 V @ I_S = 148 A, T_J = 25°C - Forward voltage of integrated body diode; impacts conduction loss during dead-time conduction in half-bridge configurations.

Pinout & Package

IRLS3813PBF uses the D2Pak (TO-263AB) surface-mount package with exposed drain pad for thermal and electrical connection. The package features three leads: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the large copper tab on the backside.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current output terminal; tied to PCB copper pour	Primary heat path to PCB; must be soldered to ≥1"² FR-4 copper area for R_θJA = 40 °C/W rating.
Source	Reference node for gate drive and current return path	Connected to power ground plane; low-inductance layout essential to minimize switching overshoot and EMI.
Gate	Control input for channel modulation	High-impedance MOS input requiring <55 nC charge; sensitive to ringing-requires local 10–100 nF decoupling and controlled trace routing.

Key Features

Feature	Design Value
Fully characterized avalanche SOA	177 mJ single-pulse energy with validated safe operating area curves-enables robust design without external snubbers in motor drive flyback paths.
Enhanced body diode dV/dt capability	2.2 V/ns at T_J = 150°C-prevents spurious turn-on during high-speed commutation in BLDC and inverter half-bridges.
Ultra-low R_DS(on) with silicon/package de-rating clarity	1.60 mΩ typ. + explicit 160A package limit-allows accurate thermal modeling and eliminates ambiguity in current derating rules.
Lead-free, RoHS-compliant construction	Pb-free plating and halogen-free molding compound-meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) and industrial environmental compliance requirements.
Optimized dynamic parameters for high-frequency switching	Q_gd/Q_gs ratio of ~0.39 and C_oss = 1250 pF-reduces Miller effect and improves controllability in >100 kHz resonant LLC and ZVS topologies.

Applications

Brushed Motor Drive

BLDC Motor Drive

Use Scenario: High-current H-bridge control for cordless power tools and automotive window lifters.

IC Role / Device Role / Timing Role: Low-side and high-side switching element handling bidirectional 100–160A peak currents with <100 ns dead-time control.

Use Value: Sub-2 mΩ R_DS(on) reduces I²R losses by >30% vs. legacy 3.5 mΩ MOSFETs, extending battery runtime and limiting junction temperature rise to <125°C at 150A.

Use Scenario: Six-step commutation in 3-phase BLDC inverters for e-bikes and HVAC blowers.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switching device in each leg, operating at 10–25 kHz PWM with precise gate timing.

Use Value: Fast t_f = 102 ns and low Q_gd enable clean zero-voltage switching transitions, reducing EMI and improving efficiency above 96% at 1 kW output.

Synchronous Rectification

OR-ing / Redundant Power

Use Scenario: Secondary-side rectification in isolated 48V→12V DC/DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Body-diode replacement in forward and LLC converters, driven synchronously with primary-side controller timing signals.

Use Value: V_SD = 1.3 V and soft-recovery t_rr = 32 ns minimize reverse recovery losses and cross-conduction risk, increasing conversion efficiency by 1.2–1.8% over Schottky solutions.

Use Scenario: Hot-swap and redundancy management in 12V/24V distributed power architectures for industrial PLCs and datacom equipment.

IC Role / Device Role / Timing Role: Ideal diode replacement in OR-ing FET configurations, controlled by dedicated load-share ICs or discrete comparators.

Use Value: R_DS(on) = 1.60 mΩ cuts forward voltage drop to <240 mV at 150 A, reducing power dissipation by >85% versus 40V Schottky diodes and eliminating thermal runaway risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 3.5 mΩ (higher), I_D = 160 A, same D2Pak package, lower Q_g = 42 nC	Lower switching loss but higher conduction loss; suitable where thermal margin exists but gate drive is constrained	Select when gate driver output current is limited (<2 A peak) and average current ≤100 A.
STL220N3LLH6	R_DS(on) = 1.4 mΩ (lower), 30V, 220A, TO-220FP package, no avalanche rating published	Higher current capability but larger footprint and no documented E_AS; requires external avalanche protection in inductive loads	Select for space-constrained TO-220 layouts where avalanche stress is absent and peak current exceeds 160 A.

Compared with IRLS3813PBF, IRL1404ZPBF trades conduction efficiency for gate drive simplicity, while STL220N3LLH6 offers lower R_DS(on) in a non-thermally optimized package without verified avalanche ruggedness-making IRLS3813PBF the balanced choice for high-reliability motor and converter designs demanding both low loss and proven unclamped inductive robustness.

Availability

IRLS3813PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across production lifecycles and volume ramp phases.

Supply support for IRLS3813PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® Power MOSFET portfolio, emphasizing high-power efficiency, ruggedness, and automotive-grade reliability.

The IRLS3813PBF belongs to the low-voltage, high-current HEXFET® series designed specifically for battery-powered and high-efficiency DC/DC conversion applications where ultra-low R_DS(on), fast switching, and body-diode performance are critical.

FAQ

What is the maximum continuous drain current for IRLS3813PBF at 100°C case temperature?

The datasheet specifies ID @ TC = 100°C (silicon-limited) as 156 A at VGS = 10 V. This value reflects thermal derating due to junction temperature limits and assumes adequate heatsinking. It is not package-limited-actual usable current at 100°C case depends on PCB copper area and ambient conditions, but 156 A represents the silicon's intrinsic capability under those thermal constraints.

Does IRLS3813PBF have a specified avalanche current rating?

No standalone avalanche current rating is provided; instead, it specifies single-pulse avalanche energy EAS = 177 mJ under defined test conditions (L = 16 µH, IAS = 148 A, VGS = 10 V). This energy rating, combined with SOA curves in Figure 8, allows designers to calculate allowable avalanche current for given pulse widths and starting junction temperatures.

Can IRLS3813PBF be used in parallel configurations?

Yes-its positive RDS(on) temperature coefficient (RDS(on) increases with TJ) provides inherent current sharing stability. However, layout symmetry (matched gate and source inductance), individual gate resistors (≥4.7 Ω), and thermal coupling via shared copper pour are mandatory to ensure balanced conduction and avoid thermal runaway.

What is the recommended PCB footprint and thermal pad layout for D2Pak mounting?

Per IR Application Note AN-994, the recommended footprint uses a 1" square (25.4 mm × 25.4 mm) FR-4 copper area connected to the drain tab via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch). The pad should be solder-mask defined with 0.2 mm solder mask opening beyond copper edges to maximize solder fillet strength and thermal transfer.

IRLS3813PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.95mOhm @ 148A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 83 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 195W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRLS3813PBF FAQ

1.How can I place an order for IRLS3813PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLS3813PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLS3813PBF reliable?

The price and inventory of IRLS3813PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLS3813PBF is usually 5 days.

3.What payment methods are accepted for IRLS3813PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLS3813PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLS3813PBF?

IRLS3813PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLS3813PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLS3813PBF?

For technical support, including IRLS3813PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLS3813PBF requirements.

6.How does Aetrix verify that IRLS3813PBF is sourced from the original manufacturer or authorized distributors?

All IRLS3813PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLS3813PBF meets industry standards.

7.What is the process for return or replacement of IRLS3813PBF?

All IRLS3813PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLS3813PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLS3813PBF part is unused and in its original packaging.

Return procedure for IRLS3813PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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