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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLS3813TRLPBF

Name: IRLS3813TRLPBF
Brand: Infineon Technologies
SKU: IRLS3813TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLS3813TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRLS3813TRLPBF.pdf

Description:: MOSFET N-CH 30V 160A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLS3813TRLPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 1.60 mΩ typ. N-channel HEXFET® Power MOSFET in D2Pak (TO-263AB) package, rated for 160A continuous drain current (package-limited) and 850A pulsed current. It features enhanced body diode dV/dt (2.2 V/ns) and dI/dt capability, fully characterized avalanche energy (177 mJ), and RoHS-compliant lead-free construction. Used in high-current synchronous rectification and BLDC motor drive half-bridge legs.

For engineers reviewing the IRLS3813TRLPBF datasheet, IRLS3813TRLPBF pinout, IRLS3813TRLPBF application, or IRLS3813TRLPBF equivalent, key selection criteria include R_DS(on) at 148A/10V, gate charge (55 nC typ.), thermal resistance (0.64 °C/W J-C), avalanche robustness, and D2Pak mounting compatibility with high-power PCB layouts.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-frequency DC/DC converters and motor control inverters. Its body diode is engineered for soft recovery (Q_rr = 24 nC, t_rr = 32 ns) and high dv/dt immunity (2.2 V/ns at T_J = 150°C), enabling reliable operation in hard-switched and resonant topologies without external snubbers.

The device operates across –55°C to +150°C junction temperature range with ±20V gate rating and 1.35–2.35V threshold voltage. Its SOA is fully characterized up to 100 µs pulses, and avalanche performance is validated under unclamped inductive switching (IAS = 148A, L = 16 µH, RG = 50 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage in off-state; defines use in ≤24V nominal bus systems with margin.
R_DS(on) typ.	1.60 mΩ @ V_GS = 10 V, I_D = 148 A - Enables <150 mW conduction loss at 120 A, critical for thermally constrained 100+ A power stages.
I_D (Package)	160 A @ T_C = 25°C - Real-world continuous current limit dictated by D2Pak thermal path and bond wire capacity.
E_AS	177 mJ - Single-pulse avalanche energy rating ensures survivability during load dump or inductive turn-off faults.
Q_g	55 nC typ. - Low total gate charge reduces driver power demand and enables efficient 100–500 kHz switching in high-side synchronous rectifiers.
R_θJC	0.64 °C/W - Junction-to-case thermal resistance confirms direct heatsink mounting capability for >150 W dissipation with <100°C ΔT.
t_r/t_f	202 ns / 102 ns - Fast switching transitions minimize overlap loss in bridge configurations operating above 100 kHz.

Pinout & Package

D2Pak (TO-263AB) package with exposed drain pad on underside for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Standard pin assignment viewed from top side (marking side): Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives 10 V logic-level signal to fully enhance channel; 0.9 Ω internal gate resistance limits ringing.
Drain (D)	High-side power node	Connected to exposed copper tab; carries full load current and requires direct thermal interface to heatsink.
Source (S)	Power return / reference	Common return path for drain current and gate drive loop; low-inductance layout essential for EMI control.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	2.2 V/ns at T_J = 150°C - Prevents spurious turn-on during fast voltage transients in half-bridge freewheeling.
Characterized avalanche SOA	177 mJ single-pulse energy - Eliminates need for external clamping in unregulated inductive loads like solenoids or motor windings.
Low C_oss eff. (ER)	1560 pF - Reduces capacitive switching loss and improves light-load efficiency in resonant LLC converters.
Thermally robust D2Pak	0.64 °C/W R_θJC - Supports >195 W continuous dissipation with forced-air heatsink, enabling compact 1–3 kW designs.
Lead-free & RoHS compliant	Pb-free plating and halogen-free mold compound - Meets IPC-J-STD-609A Class 1 and EU RoHS Directive 2011/65/EU.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: High-current H-bridge for cordless power tools with 18–24V battery supply and peak loads >100A.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase half-bridge configuration, handling bidirectional current with body diode commutation.

Use Value: 1.60 mΩ R_DS(on) minimizes I²R heating during stall conditions; 850A pulsed rating withstands startup surges without derating.

Use Scenario: 3-phase inverter stage in e-bike controller, operating at 20 kHz PWM with field-oriented control.

IC Role / Device Role / Timing Role: Upper-leg synchronous rectifier in each phase leg, requiring fast turn-off and low Q_gd/Q_g ratio for clean commutation.

Use Value: 11 nC Q_gd and 55 nC Q_g enable crisp edge control; 2.2 V/ns dV/dt rating prevents shoot-through during high dv/dt cross-conduction.

Synchronous Rectification

OR-ing Power Switch

Use Scenario: Secondary-side switch in isolated 48V→12V telecom DC/DC converter delivering 120A output.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, driven by transformer-coupled gate signal.

Use Value: 1.3 V V_SD body diode forward drop and 1.60 mΩ channel resistance cut conduction loss by >40% vs. 40V Schottky, improving full-load efficiency to >95%.

Use Scenario: Redundant 24V power supply OR-ing in industrial PLC backplane with hot-swap capability.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode with reverse current blocking and low forward drop.

Use Value: 177 mJ avalanche rating absorbs transient reverse voltage during supply switchover; 160A continuous rating supports parallel 200A system designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3813PbF	Same die, legacy TO-220AB package; R_θJA = 40 °C/W (vs. 0.64 °C/W J-C in D2Pak); no exposed drain tab.	Limited to ≤50A continuous due to higher thermal resistance; unsuitable for PCB-mounted heatsink integration.	Select only when mechanical constraints prohibit D2Pak footprint or when lower-cost through-hole assembly is required.
IPB017N04LG	40V-rated OptiMOS™, R_DS(on) = 1.7 mΩ @ 10V but lower Q_g (42 nC); different gate threshold (1.2–2.2 V).	Better suited for 36V systems; slightly faster switching but reduced avalanche margin (E_AS = 120 mJ).	Prefer for new 36V designs needing tighter gate drive timing; avoid where 30V bus fault tolerance or 177 mJ avalanche is mandatory.

Compared with IRL3813PbF and IPB017N04LG, the IRLS3813TRLPBF delivers superior thermal performance via D2Pak's 0.64 °C/W R_θJC, verified avalanche robustness for safety-critical motor drives, and optimized body diode dynamics for high-dv/dt environments-making it the preferred choice for 24V/100+A synchronous rectification and BLDC inverter legs.

Availability

IRLS3813TRLPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC motor inverters, and synchronous rectification circuits requiring stable component supply, long-term industrial lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IRLS3813TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line was originally developed by International Rectifier and continues under Infineon to deliver high-current, low-R_DS(on) discrete switches for motor control, power conversion, and battery protection systems.

FAQ

What is the maximum continuous drain current for IRLS3813TRLPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 156 A (silicon-limited), per the Absolute Maximum Ratings table. This value reflects thermal derating from the 160 A rating at 25°C case temperature, based on the device's R_θJC = 0.64 °C/W and maximum T_J = 150°C limit.

Does IRLS3813TRLPBF support logic-level gate drive?

Yes - its gate threshold voltage (V_GS(th)) ranges from 1.35 V to 2.35 V, and it achieves full enhancement (R_DS(on) = 1.60 mΩ typ.) at V_GS = 10 V. It is compatible with standard 3.3 V and 5 V microcontroller outputs when used with appropriate gate drivers for high-current switching.

How is the D2Pak drain tab electrically connected internally?

The exposed drain tab in the D2Pak (TO-263AB) package is directly bonded to the MOSFET's drain region and forms the primary drain terminal. It must be soldered to a large copper pour or heatsink, which serves both thermal dissipation and electrical connection - no separate drain pin is provided.

Can IRLS3813TRLPBF replace IRL3813PbF in an existing TO-220 design?

No - IRLS3813TRLPBF uses the surface-mount D2Pak footprint, while IRL3813PbF uses through-hole TO-220AB. Mechanical, thermal, and layout changes are required. Electrical specs are identical, but thermal performance improves significantly with proper D2Pak heatsinking.

IRLS3813TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.95mOhm @ 148A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 83 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 195W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263AB (D2PAK)

IRLS3813TRLPBF FAQ

1.How can I place an order for IRLS3813TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLS3813TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLS3813TRLPBF reliable?

The price and inventory of IRLS3813TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLS3813TRLPBF is usually 5 days.

3.What payment methods are accepted for IRLS3813TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLS3813TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLS3813TRLPBF?

IRLS3813TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLS3813TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLS3813TRLPBF?

For technical support, including IRLS3813TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLS3813TRLPBF requirements.

6.How does Aetrix verify that IRLS3813TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRLS3813TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLS3813TRLPBF meets industry standards.

7.What is the process for return or replacement of IRLS3813TRLPBF?

All IRLS3813TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLS3813TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLS3813TRLPBF part is unused and in its original packaging.

Return procedure for IRLS3813TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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