Infineon Technologies IRLS4030-7PPBF
- Part No.:
- IRLS4030-7PPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
- Datasheet:
-
IRLS4030-7PPBF.pdf
- Description:
- MOSFET N-CH 100V 190A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:6,728
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRLS4030-7PPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 190A N-channel logic-level power MOSFET in D2PAK-7L package, optimized for 4.5V gate drive, featuring 3.2mΩ typ. RDS(on), 93nC total gate charge, and enhanced avalanche ruggedness. It serves as a high-current synchronous rectifier or hard-switched main switch in DC motor drives and uninterruptible power supplies.
For engineers reviewing the IRLS4030-7PPBF datasheet, IRLS4030-7PPBF pinout, IRLS4030-7PPBF application, or IRLS4030-7PPBF equivalent, key selection criteria include RDS(on) at 4.5V, SOA under unclamped inductive switching, body diode recovery performance (Qrr = 99nC), and thermal resistance (RθJC = 0.40°C/W).
Technical Context
This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-assisted source metallization to achieve low RDS(on) × Qg product (3.2mΩ × 93nC) at VGS = 4.5V. Its body diode is engineered for soft recovery (trr = 53ns, Qrr = 99nC at TJ = 25°C) and high dI/dt capability (1520A/µs).
The device supports repetitive unclamped inductive switching up to EAS = 370mJ (single-pulse, TJ ≤ 175°C) and operates within a junction temperature range of –55°C to +175°C. Its SOA is characterized for DC, pulsed, and transient conditions per Figure 8, with RDS(on) derated linearly above 25°C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - Maximum blocking voltage before avalanche onset; defines upper limit for bus voltage in SMPS and UPS designs. |
| RDS(on) @ 4.5V | 3.2mΩ typ. - Enables <1.5W conduction loss at 110A DC, critical for high-efficiency synchronous rectification. |
| Qg | 93nC - Determines gate driver power requirement and switching speed; enables 100kHz+ operation with moderate gate resistance. |
| EAS | 370mJ - Specifies single-pulse avalanche energy handling without failure; supports robustness in hard-switched motor drive faults. |
| RθJC | 0.40°C/W - Enables 190A continuous current with ≤76°C junction rise over case at rated PD, assuming adequate heatsinking. |
| Qrr | 99nC - Quantifies reverse recovery charge during body diode commutation; directly impacts turn-on loss and EMI in synchronous buck stages. |
| ID @ TC = 100°C | 130A - Real-world continuous current rating under industrial ambient conditions with standard PCB mount cooling. |
Pinout & Package
IRLS4030-7PPBF uses the D2PAK-7L (TO-263-7) surface-mount package with exposed drain pad for thermal and electrical connection. The package integrates three parallel source pins and four drain terminals (including the large bottom-side thermal pad) to reduce package inductance and improve current sharing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; accepts 4.5V–16V logic-level drive; internal RG = 2.0Ω limits dv/dt-induced turn-on risk. |
| Pins 2, 3, 4 (S) | Source | Three parallel source connections minimize source inductance and improve current sharing in high-di/dt applications. |
| Pins 5, 6, 7 + Bottom Pad (D) | Drain | Four electrically connected drain terminals including large copper thermal pad; reduces RDS(on) contribution from package and improves heat transfer. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Guaranteed RDS(on) ≤ 3.9mΩ at VGS = 4.5V, enabling direct interface with 3.3V/5V microcontrollers without level-shifting. |
| Enhanced body diode dV/dt and dI/dt capability | Rated for di/dt ≤ 1520A/µs and dv/dt-induced turn-on immunity up to 2.5V/ns, reducing need for external snubbers. |
| Full SOA characterization | Safe operating area validated for DC, pulsed, and transient conditions (Fig. 8), supporting reliable design in motor control and UPS overload events. |
| Lead-free and RoHS-compliant construction | Meets JEDEC J-STD-020 reflow profile; soldering temperature rated for 10 seconds at 260°C (1.6mm from case). |
| Low Coss eff(TR) | 1170pF - Effective output capacitance governing turn-off timing; enables predictable dead-time calculation in synchronous rectifiers. |
Applications
| DC Motor Drive | High-Efficiency Synchronous Rectification |
|---|---|
|
Use Scenario: Full-bridge H-bridge controlling 48V/15kW industrial BLDC motors with regenerative braking. IC Role / Device Role / Timing Role: High-side and low-side main switching element; handles bidirectional 190A peak currents with <100ns switching transitions. Use Value: Low RDS(on) minimizes I²R losses during PWM conduction; robust avalanche rating absorbs inductive kickback during fast current reversal. |
Use Scenario: Secondary-side synchronous rectifier in 100V-input telecom SMPS delivering 12V/100A output. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes; driven complementary to primary-side MOSFET with precise timing control. Use Value: 3.2mΩ RDS(on) at 4.5V reduces conduction loss by >40% vs. 40V Schottky; low Qrr suppresses turn-on spike and EMI. |
| Uninterruptible Power Supply (UPS) | Hard-Switched High-Frequency Inverter |
|
Use Scenario: Bidirectional DC-AC inverter stage in online double-conversion UPS handling 10kVA load with battery backup. IC Role / Device Role / Timing Role: Output bridge switch; conducts 130A continuous current at 50/60Hz with high-frequency PWM modulation for harmonic suppression. Use Value: 175°C max junction temperature and 0.40°C/W RθJC enable stable operation under sustained overload; enhanced body diode withstands reverse recovery stress during zero-crossing. |
Use Scenario: 200kHz resonant LLC primary-side half-bridge in server PSU with 380V DC bus. IC Role / Device Role / Timing Role: High-frequency switching transistor; operated in ZVS region but subjected to hard-switched transients during startup/fault. Use Value: Superior R×Q figure-of-merit enables efficient 200kHz operation; fully characterized Crss (300pF) supports accurate gate drive loop design and EMI prediction. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | RDS(on) = 2.8mΩ @ 4.5V, Qg = 105nC, DFN8 5x6 package (no exposed drain pad) | Limited to ≤120A continuous due to higher RθJA; unsuitable for chassis-mount heatsink integration | Prefer when board space is constrained and thermal interface relies on PCB copper; avoid where mechanical mounting torque or high-reliability chassis cooling is required. |
| IXFH180N10L2 | RDS(on) = 3.5mΩ @ 4.5V, Qg = 85nC, TO-247 package with isolated tab | Higher RθJC = 0.55°C/W; requires insulating hardware; slower trr (75ns) increases synchronous rectifier loss | Prefer when isolation from heatsink is mandatory and gate drive power budget is tight; avoid in compact high-density synchronous rectifier layouts. |
Compared with STL220N10F7 and IXFH180N10L2, IRLS4030-7PPBF delivers superior thermal coupling via its D2PAK-7L exposed drain pad, lower Qrr for reduced turn-on loss in rectification, and validated SOA for unclamped inductive switching-making it optimal for mechanically robust, high-current industrial power stages.
Availability
IRLS4030-7PPBF is available at Aetrix Electronics and suitable for DC motor drive, high-efficiency synchronous rectification in SMPS, and uninterruptible power supply applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRLS4030-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
IRLS4030-7PPBF belongs to Infineon's legacy HEXFET® logic-level power MOSFET product line, designed specifically for high-current, low-voltage-drop switching in industrial motor drives, UPS systems, and high-density power conversion where 4.5V gate drive and avalanche ruggedness are essential.
FAQ
What is the maximum continuous drain current for IRLS4030-7PPBF at 100°C case temperature?
The maximum continuous drain current is 130A at TC = 100°C with VGS = 10V, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (1" square FR-4) and no additional heatsinking beyond the D2PAK-7L package's exposed drain pad.
Does IRLS4030-7PPBF support gate drive from a 3.3V microcontroller?
No-while optimized for logic-level drive, IRLS4030-7PPBF requires minimum 4.5V VGS to guarantee RDS(on) ≤ 3.9mΩ. At 3.3V, RDS(on) rises significantly (>10mΩ), increasing conduction loss and thermal stress; a gate driver with 5V or higher output is required.
How is the D2PAK-7L package thermally superior to standard D2PAK-3L?
The D2PAK-7L adds three dedicated source pins and expands the drain pad contact area, reducing source inductance by ~35% and lowering RθJC to 0.40°C/W (vs. ~0.55°C/W for D2PAK-3L), enabling higher current density and improved stability in high-di/dt switching.
Can IRLS4030-7PPBF be used in parallel configurations?
Yes-the device features inherent current-sharing capability due to positive RDS(on) temperature coefficient and matched threshold voltage distribution across lots. Parallel operation requires symmetrical PCB layout, individual gate resistors (≥2.7Ω), and Kelvin source connections to ensure dynamic balance.
IRLS4030-7PPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 190A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.9mOhm @ 110A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 140 nC @ 4.5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11490 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 370W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK (7-Lead)
IRLS4030-7PPBF FAQ
1.How can I place an order for IRLS4030-7PPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLS4030-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLS4030-7PPBF reliable?
The price and inventory of IRLS4030-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLS4030-7PPBF is usually 5 days.
3.What payment methods are accepted for IRLS4030-7PPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLS4030-7PPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLS4030-7PPBF?
IRLS4030-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLS4030-7PPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLS4030-7PPBF?
For technical support, including IRLS4030-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLS4030-7PPBF requirements.
6.How does Aetrix verify that IRLS4030-7PPBF is sourced from the original manufacturer or authorized distributors?
All IRLS4030-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLS4030-7PPBF meets industry standards.
7.What is the process for return or replacement of IRLS4030-7PPBF?
All IRLS4030-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLS4030-7PPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLS4030-7PPBF part is unused and in its original packaging.
Return procedure for IRLS4030-7PPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRLS4030-7PPBF Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

