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Infineon Technologies IRLS4030PBF
- Part No.:
- IRLS4030PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRLS4030PBF.pdf
- Description:
- MOSFET N-CH 100V 180A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,558
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Product details
Overview
IRLS4030PBF from Infineon Technologies is a 100V, 180A N-channel logic-level HEXFET Power MOSFET in D²PAK (TO-262) package, optimized for 4.5V gate drive, featuring 3.4mΩ typ. RDS(on), 87nC total gate charge, and enhanced body diode dI/dt capability up to 1330A/µs. It serves as a high-current synchronous rectifier or hard-switched power switch in DC motor drives and uninterruptible power supplies.
For engineers reviewing the IRLS4030PBF datasheet, IRLS4030PBF pinout, IRLS4030PBF application, or IRLS4030PBF equivalent, key selection criteria include its low 4.5V-threshold on-resistance, avalanche-rated energy handling (730mJ), SOA-limited switching robustness, and thermal resistance of 0.40°C/W junction-to-case - critical for high-power SMPS and industrial motor control designs.
Technical Context
This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-assisted body diode design to achieve superior R×Qg trade-off at 4.5V VGS. Its gate threshold voltage (1.0–2.5V) enables direct interfacing with 3.3V/5V logic controllers without level-shifting.
The device integrates a fully characterized intrinsic body diode with 50ns reverse recovery time (TJ = 25°C, IF = 110A) and 88nC Qrr, supporting high-frequency synchronous rectification while maintaining dV/dt ruggedness up to 2.5V/ns under clamped inductive switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - supports bus voltages up to 85V DC with margin for transients in UPS and motor drive applications. |
| RDS(on) max | 4.3mΩ @ VGS = 4.5V - enables <1.0W conduction loss at 110A, critical for thermally constrained PCB layouts. |
| ID @ TC = 25°C | 180A - continuous current rating achievable only with heatsinked D²PAK mounting and ≤0.40°C/W thermal path. |
| Qg max | 130nC - determines gate driver power requirement; 87nC typical value allows efficient 1MHz-class switching with <2W driver dissipation. |
| EAS | 730mJ - single-pulse avalanche energy rating confirms reliability under unclamped inductive turn-off in motor H-bridges. |
| trr / Qrr | 50ns / 88nC - fast, low-charge body diode recovery reduces cross-conduction losses in synchronous buck converters. |
| RθJC | 0.40°C/W - defines minimum heatsink requirement: ΔT = 70°C rise at 175°C max TJ implies 175W max power with 70°C case temp. |
Pinout & Package
IRLS4030PBF uses the D²PAK (TO-262) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard G-D-S order (Gate-Drain-Source) on the leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Accepts 4.5V–16V logic-level drive; 2.1Ω internal gate resistance limits dv/dt-induced shoot-through during paralleling. |
| Drain (D) | High-side power terminal | Internally connected to exposed copper pad; must be soldered to large PCB copper area or heatsink for thermal management. |
| Source (S) | Power return and reference node | Serves as local ground reference for gate drive; low-inductance layout essential to maintain dI/dt stability during 1330A/µs switching. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Guaranteed turn-on at VGS = 4.5V (RDS(on) ≤ 4.3mΩ), eliminating need for gate boosters in 5V microcontroller-based systems. |
| Enhanced body diode dI/dt capability | Rated for 1330A/µs di/dt with VDD ≤ 100V and TJ ≤ 175°C - enables reliable freewheeling in high-current half-bridge motor phases. |
| Low R×Qg figure-of-merit | 3.4mΩ × 87nC = 296mΩ·nC - balances conduction and switching losses for optimal efficiency in 100kHz–500kHz SMPS topologies. |
| Full avalanche SOA characterization | Single-pulse EAS = 730mJ and repetitive EAR = 21mJ validated per Fig. 15 - supports robust operation in unclamped inductive loads. |
| Lead-free and RoHS-compliant construction | Meets JEDEC J-STD-020 reflow profile; qualified for 260°C peak temperature, enabling compatibility with standard SMT assembly lines. |
Applications
| DC Motor Drive | High-Efficiency SMPS |
|---|---|
|
Use Scenario: H-bridge phase-leg switch in 24–48V brushed DC motor controllers for robotics and industrial actuators. IC Role / Device Role / Timing Role: High-side and low-side power switch handling bidirectional 110A peak currents with <100ns dead-time tolerance. Use Value: 3.4mΩ RDS(on) reduces I²R heating by >35% vs. legacy 6.5mΩ MOSFETs, enabling smaller heatsinks and higher duty-cycle operation. |
Use Scenario: Synchronous rectifier in secondary side of isolated full-bridge DC/DC converter for telecom power systems. IC Role / Device Role / Timing Role: Body-diode-replacement switch operating at 300kHz with zero-voltage switching (ZVS) assist. Use Value: 50ns trr and 88nC Qrr minimize reverse recovery losses, improving system efficiency by 1.2% at 1.5kW output compared to Schottky alternatives. |
| Uninterruptible Power Supply | Hard-Switched Inverters |
|
Use Scenario: Bidirectional battery interface switch in online UPS systems requiring seamless transfer between AC line and battery backup. IC Role / Device Role / Timing Role: Low-loss power path selector with integrated body diode supporting reverse current during battery charging. Use Value: 1330A/µs dI/dt rating ensures stable commutation during 10ms transfer events without parasitic oscillation or latch-up. |
Use Scenario: Main switching element in 100V-class resonant LLC inverters for solar microinverters and EV auxiliary power units. IC Role / Device Role / Timing Role: Primary-side high-frequency switch subjected to 100V bus transients and 180A pulsed currents. Use Value: 730mJ EAS withstands worst-case inductive kickback during fault conditions, eliminating need for external snubbers in Class A designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL1404PBF | Lower voltage rating (40V), higher RDS(on) (4.8mΩ), lower ID (160A), TO-220 package. | Not suitable for 100V bus applications; limited to 36V automotive or low-voltage industrial systems. | Select only when board space permits TO-220 and system voltage remains ≤40V. |
| STL220N10F7 | 100V rating, 2.2mΩ RDS(on) @ 10V, but requires 10V gate drive; no 4.5V characterization; PowerFLAT 5x6 package. | Lacks logic-level capability - mandates gate driver IC; unsuitable for direct MCU GPIO drive. | Prefer only when gate drive circuitry already includes level-shifting and thermal constraints allow smaller footprint. |
Compared with IRLS4030PBF, IRL1404PBF trades voltage headroom for cost and availability in low-voltage designs, while STL220N10F7 offers lower on-resistance but forfeits 4.5V logic compatibility - making IRLS4030PBF uniquely balanced for 100V systems needing direct microcontroller control and high pulse-current capability.
Availability
IRLS4030PBF is available at Aetrix Electronics and suitable for DC motor drive, high-efficiency synchronous rectification in SMPS, and uninterruptible power supply applications requiring stable component supply across extended production lifecycles.
Supply support for IRLS4030PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The IRLS4030PBF belongs to Infineon's logic-level HEXFET Power MOSFET product line, engineered specifically for high-current, low-voltage-drop switching in space-constrained industrial and computing power systems where gate drive simplicity and thermal performance are critical.
FAQ
Is IRLS4030PBF suitable for paralleling multiple devices?
Yes - its positive temperature coefficient of RDS(on) (Fig. 4) ensures current sharing stability across parallel units. Designers must match gate loop inductance and use Kelvin source connections to avoid oscillation; IRF application note AN-994 specifies recommended PCB layout and soldering techniques for D²PAK paralleling.
What is the maximum safe operating frequency for IRLS4030PBF in hard-switched applications?
Based on dynamic parameters (td(on) = 74ns, tr = 330ns, Qg = 87nC), the practical upper limit is ~500kHz for continuous operation with adequate gate drive strength (>2A peak) and thermal management. Above this, switching losses dominate and junction temperature exceeds 175°C unless derated.
Does IRLS4030PBF require a gate resistor for EMI suppression?
A gate resistor (typically 2.7–10Ω) is recommended to dampen ringing caused by stray inductance in the gate loop, especially at high dI/dt. The internal 2.1Ω gate resistance alone is insufficient; external resistance controls turn-on/turn-off speed and reduces radiated emissions per CISPR 22 Class B requirements.
Can IRLS4030PBF replace IRLB4030PBF in existing designs?
Yes - both share identical electrical specifications, pinout, and D²PAK package. IRLS4030PBF is the surface-mount variant with enhanced thermal performance (lower RθJC) and updated RoHS compliance; no layout or firmware changes are required for drop-in replacement in new production runs.
IRLS4030PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.3mOhm @ 110A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 4.5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11360 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 370W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRLS4030PBF FAQ
1.How can I place an order for IRLS4030PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLS4030PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLS4030PBF reliable?
The price and inventory of IRLS4030PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLS4030PBF is usually 5 days.
3.What payment methods are accepted for IRLS4030PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLS4030PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLS4030PBF?
IRLS4030PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLS4030PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLS4030PBF?
For technical support, including IRLS4030PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLS4030PBF requirements.
6.How does Aetrix verify that IRLS4030PBF is sourced from the original manufacturer or authorized distributors?
All IRLS4030PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLS4030PBF meets industry standards.
7.What is the process for return or replacement of IRLS4030PBF?
All IRLS4030PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLS4030PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLS4030PBF part is unused and in its original packaging.
Return procedure for IRLS4030PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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