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Infineon Technologies IRLSL3034PBF

Part No.:
IRLSL3034PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIRLSL3034PBF.pdf
Description:
MOSFET N-CH 40V 195A TO262
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,988

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Product details

Overview

IRLSL3034PBF from Infineon Technologies is a logic-level N-channel Power MOSFET in D2PAK (TO-262) package, designed for high-current switching in DC motor drives and synchronous rectification. It delivers 40 V VDS, 1.4 mΩ RDS(on) at 4.5 V VGS, 195 A package-limited continuous drain current, and enhanced body diode dV/dt/dI/dt capability - enabling robust operation in hard-switched SMPS and UPS systems.

For engineers reviewing the IRLSL3034PBF datasheet, IRLSL3034PBF pinout, IRLSL3034PBF application, or IRLSL3034PBF equivalent, key selection criteria include its 1.4 mΩ on-resistance at 4.5 V gate drive, 108 nC total gate charge, 195 A pulsed source current rating, avalanche energy of 255 mJ, and SOA compliance up to 10 ms at 100 A/40 V.

Technical Context

This MOSFET uses planar HEXFET architecture with optimized trench-assisted gate structure to achieve ultra-low RDS(on) while maintaining fast switching and rugged unclamped inductive switching (UIS) performance. Its gate threshold voltage (1.0–2.5 V) ensures reliable turn-on with standard logic-level drivers.

The device integrates a co-packaged, enhanced body diode with 39 ns reverse recovery time (TJ = 25°C) and 39 nC Qrr, supporting high-frequency synchronous rectification without external Schottky supplementation. Thermal resistance RθJC is 0.4 °C/W, enabling high-power density PCB mounting.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V - Maximum blocking voltage for 12–24 V bus applications with 20 % margin
RDS(on) @ 4.5 V 1.4 mΩ typ. - Enables ≤1.2 W conduction loss at 195 A, critical for thermal management in compact UPS modules
ID (Package) 195 A @ TC = 25°C - Determined by bond wire and leadframe limits, not silicon capacity
Qg 108 nC max. - Dictates gate driver power requirement; supports 100 kHz+ switching with <1 W driver dissipation
EAS 255 mJ - Single-pulse avalanche energy at TJ = 25°C, enabling reliable operation under inductive load transients
trr / Qrr 39 ns / 39 nC - Fast, low-charge body diode recovery reduces cross-conduction losses in synchronous buck converters
RθJC 0.4 °C/W - Allows direct heatsink mounting; 100 W power dissipation raises junction only 40°C above case

Pinout & Package

IRLSL3034PBF is housed in a surface-mount D2PAK (TO-262) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard G-D-S order (Gate–Drain–Source) on the lead frame.

Pin/Terminal Circuit Role Design Meaning
Gate (G) Control electrode Accepts 4.5–20 V logic-level drive; 2.1 Ω internal gate resistance dampens ringing
Drain (D) Main current sink Connected to exposed copper pad; carries full load current and serves as primary thermal path to heatsink
Source (S) Current return/reference node Low-inductance connection point for sense resistor placement and gate driver ground referencing

Key Features

Feature Design Value
Logic-level gate drive compatibility Guaranteed turn-on at 4.5 V VGS; eliminates need for gate boosters in 5 V microcontroller-based motor controllers
Enhanced body diode ruggedness Rated for 841 A/µs dI/dt and high dV/dt; sustains repetitive UIS events without parameter shift
Optimized R×Qg product 1.4 mΩ × 108 nC = 151 mΩ·nC - Balances conduction and switching loss for 50–200 kHz SMPS topologies
Lead-free and RoHS-compliant Meets JEDEC J-STD-020 reflow profile; compatible with standard Pb-free assembly processes
Characterized SOA and avalanche curves Full Safe Operating Area defined up to 10 ms pulse width; enables confident design without derating guesswork

Applications

DC Motor Drive Synchronous Rectification

Use Scenario: High-current H-bridge for industrial conveyor control operating from 24 V DC bus with peak loads >150 A.

IC Role / Device Role / Timing Role: Low-side switch in PWM-controlled half-bridge; handles bidirectional current during regenerative braking.

Use Value: 1.4 mΩ RDS(on) minimizes I²R heating at 195 A, reducing heatsink size by 40 % vs. legacy 3.2 mΩ alternatives.

Use Scenario: Secondary-side switch in 48 V input, 12 V/200 A telecom rectifier with 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven complementary to primary-side MOSFET.

Use Value: 39 ns trr and 39 nC Qrr cut reverse recovery loss by >70 % versus discrete SiC Schottky + driver solution.

Uninterruptible Power Supply High-Frequency Power Switching

Use Scenario: Inverter stage in 3 kVA line-interactive UPS delivering clean 230 V AC output during grid failure.

IC Role / Device Role / Timing Role: High-current output switch in full-bridge inverter; conducts 195 A peak during battery discharge.

Use Value: 255 mJ EAS withstands worst-case shoot-through transients without failure, eliminating need for external clamping.

Use Scenario: Primary switch in resonant LLC converter for server PSU, operating at 300 kHz with ZVS.

IC Role / Device Role / Timing Role: Hard-switched main power switch during startup and transient overload conditions.

Use Value: Coss eff(TR) = 2986 pF ensures predictable turn-off timing and minimal capacitive loss during hard commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRFB3004PBF Higher RDS(on) (1.6 mΩ), same 40 V rating, TO-220 package, no enhanced diode Limited to lower-frequency (<50 kHz) motor drives due to slower trr (65 ns) and higher Qrr (62 nC) Prefer when cost sensitivity outweighs efficiency needs and TO-220 mechanical fit is required
STL220N4F7AG 40 V, 1.3 mΩ RDS(on), 220 A rating, but 135 nC Qg and no published EAS data Not recommended for avalanche-prone UPS inverters; better suited for low-dV/dt DC-DC converters Choose only if gate drive capability exceeds 2 W and avalanche robustness is not required

Compared with IRLSL3034PBF, IRFB3004PBF trades 14 % higher conduction loss for lower gate drive demand and simpler thermal mounting, while STL220N4F7AG offers marginally lower RDS(on) but lacks validated UIS performance and increases driver sizing burden.

Availability

IRLSL3034PBF is available at Aetrix Electronics and suitable for DC motor drive, synchronous rectification in SMPS, and uninterruptible power supply applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRLSL3034PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's HEXFET® logic-level Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in space-constrained power systems where gate drive simplicity and thermal performance are critical.

FAQ

Is IRLSL3034PBF suitable for 5 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.0–2.5 V and guaranteed RDS(on) at 4.5 V VGS, it fully turns on using standard 5 V GPIO outputs. No level-shifting or gate boosting circuitry is required, simplifying PCB layout and reducing BOM count in motor control designs.

What is the maximum safe continuous current at 100°C case temperature?

At TC = 100°C, the continuous drain current is derated to 243 A (silicon-limited) per the datasheet's Fig. 9. However, the package-limited rating remains 195 A regardless of temperature - this is the practical upper limit for sustained operation with standard D2PAK thermal pads and 1 oz copper.

Does IRLSL3034PBF have a specified body diode reverse recovery charge (Qrr)?

Yes. Qrr is specified as 39 nC at TJ = 25°C and 46 nC at TJ = 125°C, measured with IF = 195 A, dI/dt = 100 A/µs, and VR = 34 V. This value is critical for calculating synchronous rectifier switching loss in high-frequency DC-DC converters.

Can IRLSL3034PBF be used in parallel configurations?

Yes - its positive temperature coefficient of RDS(on) (see Fig. 4) ensures inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsinking. Derate total current by 15 % for two devices and 25 % for three or more to account for thermal coupling and layout asymmetry.

IRLSL3034PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
1.7mOhm @ 195A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
162 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
10315 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
375W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-262

IRLSL3034PBF FAQ

1.How can I place an order for IRLSL3034PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLSL3034PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLSL3034PBF reliable?

The price and inventory of IRLSL3034PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLSL3034PBF is usually 5 days.

3.What payment methods are accepted for IRLSL3034PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLSL3034PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLSL3034PBF?

IRLSL3034PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLSL3034PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLSL3034PBF?

For technical support, including IRLSL3034PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLSL3034PBF requirements.

6.How does Aetrix verify that IRLSL3034PBF is sourced from the original manufacturer or authorized distributors?

All IRLSL3034PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLSL3034PBF meets industry standards.

7.What is the process for return or replacement of IRLSL3034PBF?

All IRLSL3034PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLSL3034PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLSL3034PBF part is unused and in its original packaging.

Return procedure for IRLSL3034PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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