Infineon Technologies IRLU014NPBF

Overview

IRLU014NPBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 10 A logic-level N-channel Power MOSFET in I-Pak (TO-251AA) package, featuring R_DS(on) = 0.14 Ω @ V_GS = 10 V and 0.21 Ω @ V_GS = 4.5 V, fully avalanche rated, and optimized for DC-DC converters and motor control switches.

For engineers reviewing the IRLU014NPBF datasheet, IRLU014NPBF pinout, IRLU014NPBF application, or IRLU014NPBF equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 4.5 V, fast switching (t_r = 47 ns, t_f = 23 ns), and rugged unclamped inductive switching capability (E_AS = 35 mJ).

Technical Context

This device uses fifth-generation HEXFET process technology to achieve low on-resistance per die area while maintaining high avalanche energy rating (E_AS = 35 mJ) and robust dv/dt immunity (5.0 V/ns). Its body diode exhibits t_rr = 37–56 ns and Q_rr = 48–71 nC under specified conditions.

The I-Pak package enables through-hole mounting with enhanced thermal performance (R_θJA = 50 °C/W on PCB mount), supporting continuous power dissipation up to 28 W at T_C = 25 °C and linear derating of 0.2 W/°C above that temperature.

Key Specifications

Pinout & Package

The IRLU014NPBF is housed in an I-Pak (TO-251AA) surface-mount-compatible through-hole package with three leads: Drain (tab-connected), Source (lead 1), and Gate (lead 2). The exposed drain tab provides low-inductance, high-current path and thermal conduction to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRLR014NPBF, the D-PAK variant offers superior SMT manufacturability but reduced thermal performance in high-power through-hole designs; versus STP16NF55, IRLU014NPBF delivers verified logic-level operation and 37% lower R_DS(on), enabling smaller heatsinks and simpler drive circuitry.

Availability

IRLU014NPBF is available at Aetrix Electronics and suitable for brushless DC motor drivers, industrial DC-DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for IRLU014NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous quality and automotive-grade reliability standards.

The IRLUxxN series belongs to Infineon's logic-level HEXFET Power MOSFET product line, engineered specifically for efficient, low-voltage switching in space-constrained industrial and automotive power stages.

FAQ

Is IRLU014NPBF suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) = 1.0–2.0 V and R_DS(on) = 0.21 Ω @ V_GS = 4.5 V, it achieves full enhancement using 3.3 V logic outputs. Verified test data shows 6 A drain current at V_GS = 3.3 V and V_DS = 5 V, confirming robust low-voltage operation without external level shifters.

What is the maximum continuous power dissipation at 70°C case temperature?

At T_C = 70 °C, derated power is 28 W − (70 − 25) × 0.2 W/°C = 19 W. This assumes proper PCB copper area (≥1 in² 2 oz Cu) and still air convection. Thermal resistance R_θJA = 50 °C/W applies to standard JEDEC 2S2P test board; actual dissipation depends on layout and airflow.

Does IRLU014NPBF have integrated ESD protection on the gate?

No. The device lacks on-chip gate ESD protection structures. External 10 kΩ gate resistor and 12 V Zener clamp between gate and source are recommended per IRF application notes to prevent damage from human-body-model (HBM) discharges exceeding ±2 kV, especially during handling or prototyping.

Can IRLU014NPBF replace IRLU024NPBF in existing designs?

Yes, with verification. Both share identical I-Pak package, pinout, and logic-level drive, but IRLU014NPBF has lower R_DS(on) (0.14 Ω vs. 0.27 Ω @ 10 V) and higher ID (10 A vs. 7.2 A). Thermal and switching behavior must be rechecked - lower on-resistance reduces conduction loss but increases dV/dt stress on gate driver due to higher C_iss (265 pF vs. 190 pF).