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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU024N

Name: IRLU024N
Brand: Infineon Technologies
SKU: IRLU024N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLU024N

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU024N.pdf

Description:: MOSFET N-CH 55V 17A I-PAK

Quantity:: RFQ Add To RFQ list

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Inventory:8,101

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Product details

Overview

IRLU024N from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode power MOSFET in straight-lead TO-252AA (D-Pak) package, rated for 55 V V_DS, 0.065 Ω R_DS(on) at V_GS = 10 V, 17 A continuous drain current at T_C = 25°C, and fully avalanche-rated for rugged switching. It serves as a high-efficiency, surface-mount-compatible power switch in DC-DC converters and motor control stages.

For engineers reviewing the IRLU024N datasheet, IRLU024N pinout, IRLU024N application, or IRLU024N equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 5 V gate drive (0.080 Ω), fast switching (t_r = 74 ns, t_f = 29 ns), and robust unclamped inductive switching capability (E_AS = 68 mJ).

Technical Context

The IRLU024N employs fifth-generation HEXFET® process technology to minimize on-resistance per die area while maintaining fast switching speed and thermal robustness. Its internal structure integrates a low-inductance source (L_S = 7.5 nH) and drain (L_D = 4.5 nH) path optimized for high di/dt operation.

Designed for hard-switched topologies, it supports unclamped inductive load switching with validated single-pulse avalanche energy of 68 mJ at I_AS = 11 A and exhibits stable gate charge characteristics (Q_g = 15 nC, Q_gd = 8.5 nC) across V_GS = 5–15 V, enabling predictable turn-on/turn-off timing in PWM-driven applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche onset; defines usable bus voltage range in 24–48 V systems.
R_DS(on) @ V_GS = 10 V	0.065 Ω - Conduction loss of 18.5 W at 17 A; enables high-current switching without forced cooling in PCB-mounted designs.
R_DS(on) @ V_GS = 5 V	0.080 Ω - Confirmed logic-level drive capability; allows direct interface with 5 V microcontrollers or gate drivers without level-shifting.
Q_g	15 nC - Total gate charge determines driver power requirement; compatible with standard 1-A peak gate drivers at ≤100 kHz.
t_r/t_f	74 ns / 29 ns - Fast edge rates reduce switching losses in high-frequency SMPS and enable <100 kHz operation with minimal dead-time penalty.
E_AS	68 mJ - Single-pulse avalanche energy rating ensures reliable operation during inductive turn-off transients without external snubbers.
T_J Range	−55°C to +175°C - Extended junction temperature range supports under-hood automotive and industrial ambient conditions.

Pinout & Package

IRLU024N uses the straight-lead D-Pak (TO-252AA) package, designed for through-hole mounting with vapor-phase or wave soldering compatibility. Thermal resistance is R_θJC = 3.3°C/W and R_θJA = 110°C/W (junction-to-ambient, no heatsink).

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Logic-level input requiring ≤2.0 V threshold; accepts 3.3 V/5 V MCU outputs directly; Miller charge (Q_gd = 8.5 nC) dominates switching transitions.
2 - Drain	High-side power terminal	Connected to load supply rail; electrically tied to exposed metal tab (pin 4); requires isolation from heatsink if non-grounded.
3 - Source	Power return and reference node	Serves as local ground reference for gate drive; internal source inductance (L_S = 7.5 nH) impacts high-di/dt stability and body diode recovery.
4 - Drain (Tab)	Secondary drain connection	Exposed metal pad provides low-inductance, high-current drain path and primary thermal conduction path to PCB copper pour or heatsink.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.0–2.0 V enables direct interfacing with 3.3 V/5 V digital controllers without gate driver ICs.
Fully avalanche-rated	Guaranteed 68 mJ single-pulse avalanche energy eliminates need for external clamping circuits in inductive load switching.
Low R_DS(on) at 5 V	0.080 Ω at V_GS = 5 V ensures <1 W conduction loss at 10 A, reducing thermal design burden in space-constrained layouts.
Fast switching with low Q_gd/Q_g ratio	Q_gd = 8.5 nC / Q_g = 15 nC = 57% - balances Miller effect immunity and gate drive efficiency for stable PWM operation.
Optimized for PCB thermal management	R_θJA = 50°C/W on 1"² FR-4 board enables 1.5 W dissipation without heatsink; tab-connected drain improves heat spreading.

Applications

Brushless DC Motor Control

Automotive Body Control Module

Use Scenario: Driving 3-phase BLDC motors in power tools and HVAC blowers using six discrete high-side/low-side switches.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration; handles 12–24 V bus, 10–15 A peak currents with PWM frequencies up to 50 kHz.

Use Value: Logic-level gate drive reduces controller BOM count; 0.065 Ω R_DS(on) limits conduction loss to <2.3 W at 15 A, enabling compact thermal design.

Use Scenario: Load switching for interior lighting, window lifters, and seat actuators in 12 V automotive systems.

IC Role / Device Role / Timing Role: High-reliability power switch replacing electromechanical relays; controlled by CAN/LIN-linked microcontroller GPIOs.

Use Value: −55°C to +175°C operating range meets AEC-Q101 requirements; 68 mJ E_AS withstands load dump and inductive kickback without failure.

Industrial DC-DC Converter

LED Driver Power Stage

Use Scenario: Synchronous rectification and primary-side switching in isolated 48 V input, 12 V output flyback and forward converters.

IC Role / Device Role / Timing Role: Primary-side MOSFET in self-oscillating or PWM-controlled topology; operates with 28 V V_DS stress and 11 A pulsed ID.

Use Value: Fast t_r/t_f (74/29 ns) minimizes overlap loss; low Q_g (15 nC) eases gate driver selection and reduces drive power consumption.

Use Scenario: Constant-current switching stage in high-brightness LED drivers for street lighting and signage.

IC Role / Device Role / Timing Role: High-side current regulator in buck or boost topology; modulates 350 mA–2 A LED strings at 1–10 kHz PWM dimming frequency.

Use Value: Low R_DS(on) at 5 V gate drive ensures >95% efficiency at full load; body diode reverse recovery (t_rr = 60–90 ns) prevents cross-conduction in synchronous designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	V_DS = 60 V, R_DS(on) = 0.022 Ω @ 10 V, TO-220 package, higher capacitance (C_iss = 1900 pF)	Requires heatsink above 5 A; unsuitable for surface-mount or space-constrained PCBs	Select when higher current (>20 A) and lower R_DS(on) outweigh package size and thermal interface constraints.
IRLZ44N	V_DS = 55 V, R_DS(on) = 0.028 Ω @ 10 V, TO-220 package, lower Q_g (24 nC), no avalanche rating	Lacks E_AS specification; not validated for unclamped inductive switching	Prefer only in resistive or lightly inductive loads where avalanche stress is absent and thermal margin permits TO-220 mounting.

Compared with STP55NF06L and IRLZ44N, the IRLU024N uniquely combines D-Pak through-hole mountability, verified 68 mJ avalanche capability, and logic-level drive in a thermally efficient footprint-making it optimal for cost-sensitive, reliability-critical 12–48 V industrial and automotive power stages where board space and transient robustness are prioritized over ultra-low R_DS(on).

Availability

IRLU024N is available at Aetrix Electronics and suitable for brushless DC motor control, automotive body electronics, industrial DC-DC converters, and LED driver power stages requiring stable component supply across production lifecycles.

Supply support for IRLU024N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap device physics and manufacturing.

The IRLU024N belongs to Infineon's legacy HEXFET® logic-level MOSFET product line, engineered for high-efficiency, high-reliability switching in 12–48 V embedded power systems where gate drive simplicity and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for IRLU024N at 100°C case temperature?

The IRLU024N supports 12 A continuous drain current at T_C = 100°C with V_GS = 10 V, derated linearly from 17 A at 25°C using the specified 0.3 W/°C derating factor. This reflects real-world thermal limits when mounted on standard FR-4 PCBs without heatsinks.

Does IRLU024N require a gate resistor for safe operation?

A gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate loop inductance and control dV/dt during switching. While not strictly mandatory for logic-level drive, omitting it risks shoot-through in half-bridge configurations and increases EMI due to fast edge rates (t_r/t_f < 100 ns).

Can IRLU024N replace IRLR024N in a design?

Yes-IRLU024N and IRLR024N share identical electrical specifications and die, differing only in package: IRLU024N uses straight-lead D-Pak for through-hole mounting, while IRLR024N uses gull-wing leads for surface mounting. Mechanical layout and soldering process must be adjusted accordingly.

What is the body diode forward voltage and reverse recovery behavior?

The integrated body diode has V_SD = 1.3 V at I_S = 11 A and T_J = 25°C, with reverse recovery time t_rr = 60–90 ns and Q_rr = 130–200 nC under di/dt = 100 A/µs. This enables use in synchronous rectification but requires careful dead-time management to avoid cross-conduction.

IRLU024N Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

IRLU024N FAQ

1.How can I place an order for IRLU024N through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU024N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU024N reliable?

The price and inventory of IRLU024N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU024N is usually 5 days.

3.What payment methods are accepted for IRLU024N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU024N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU024N?

IRLU024N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU024N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU024N?

For technical support, including IRLU024N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU024N requirements.

6.How does Aetrix verify that IRLU024N is sourced from the original manufacturer or authorized distributors?

All IRLU024N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU024N meets industry standards.

7.What is the process for return or replacement of IRLU024N?

All IRLU024N units undergo pre-shipment inspection (PSI). If there is an issue with IRLU024N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU024N part is unused and in its original packaging.

Return procedure for IRLU024N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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