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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU024ZPBF

Name: IRLU024ZPBF
Brand: Infineon Technologies
SKU: IRLU024ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLU024ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU024ZPBF.pdf

Description:: MOSFET N-CH 55V 16A I-PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLU024ZPBF from Infineon Technologies is a logic-level N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, rated for 55 V V_DSS, 16 A continuous drain current at T_C = 25°C, and 58 mΩ R_DS(on) at V_GS = 10 V. It features 175°C maximum junction temperature, fast switching (t_r = 43 ns, t_f = 16 ns), and rated repetitive avalanche capability-designed for DC-DC converters, motor drives, and load-switching in industrial power supplies.

For engineers reviewing the IRLU024ZPBF datasheet, IRLU024ZPBF pinout, IRLU024ZPBF application, or IRLU024ZPBF equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–3.0 V), low R_DS(on) at 4.5 V, body diode recovery performance (t_rr = 16–24 ns), and thermal robustness under pulsed avalanche stress.

Technical Context

This MOSFET employs Infineon's HEXFET® advanced process to minimize conduction loss per unit die area while maintaining high ruggedness. Its gate charge profile (Q_g = 6.6–9.9 nC, Q_gd = 3.9 nC) supports efficient high-frequency switching up to several hundred kHz in synchronous buck stages.

The integrated body diode exhibits low forward voltage (V_SD ≤ 1.3 V at I_S = 9.6 A) and controlled reverse recovery (Q_rr = 11–17 nC), enabling reliable operation in freewheeling paths without external Schottky supplementation in moderate-speed applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; sets upper limit for input rail in 48 V systems.
R_DS(on)	58 mΩ @ V_GS = 10 V - Conduction loss of 9.3 mW/A²; enables <1 W dissipation at 4 A continuous load.
I_D (continuous)	16 A @ T_C = 25°C - Sustained current capability with PCB heatsinking; derates to 11 A at 100°C case temp.
Q_g	6.6–9.9 nC - Total gate charge determines driver strength requirement; compatible with low-power gate drivers (e.g., TC4420).
t_r/t_f	43 ns / 16 ns - Fast edge rates reduce switching loss; supports >500 kHz PWM in hard-switched topologies.
T_J(max)	175°C - Enables operation in sealed enclosures or high-ambient environments without forced air cooling.
E_AS	25 mJ (tested) - Single-pulse unclamped inductive energy rating; validates reliability in relay/snubberless inductive load switching.

Pinout & Package

IRLU024ZPBF uses the surface-mount D-Pak (TO-252) package with exposed drain pad for thermal enhancement. The package measures 6.7 mm × 6.2 mm × 2.4 mm and is lead-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or return path; carries full load current and body diode conduction.
Pin 2 (Gate)	Control terminal (G)	High-impedance input requiring <200 nA leakage; threshold voltage 1.0–3.0 V enables direct microcontroller drive.
Pin 3 (Drain)	Power output terminal (D)	High-current output node; electrically connected to exposed copper pad on bottom for thermal conduction to PCB.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V-eliminates need for level-shifting or dedicated gate drivers in 5 V/3.3 V control systems.
Ultra-low R_DS(on)	58 mΩ at 10 V and 80 mΩ at 4.5 V-reduces conduction loss by >30% vs. legacy 60 V MOSFETs in same package.
Repetitive avalanche rated	Rated for repeated unclamped inductive switching up to T_J(max); validated per JEDEC JESD24-11 test conditions.
175°C junction rating	Enables extended lifetime in thermally constrained designs; reduces derating margin needed for automotive under-hood or industrial enclosure use.
Fast body diode recovery	t_rr = 16–24 ns with Q_rr = 11–17 nC-minimizes shoot-through risk and EMI in synchronous rectification and H-bridge configurations.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: High-efficiency 12–48 V input to 3.3/5/12 V output conversion in programmable logic controllers and IoT gateways.

IC Role / Device Role: Synchronous rectifier switch in low-side position; commutates in-phase with high-side FET.

Use Value: Low R_DS(on) and fast switching reduce total power loss to <0.8 W at 5 A output, improving thermal margin on compact 2-layer PCBs.

Use Scenario: Full-bridge drive for 24 V brushed motors in automated valves and HVAC actuators.

IC Role / Device Role: Low-side quadrant switch handling bidirectional current during direction reversal and braking.

Use Value: Rated repetitive avalanche withstand allows safe energy recirculation during dynamic braking without snubber networks.

Industrial Load Switch

LED Constant-Current Driver

Use Scenario: Hot-swap and inrush-limited power distribution for field I/O modules and sensor nodes.

IC Role / Device Role: High-side or low-side series pass element controlling 12–24 V supply rails.

Use Value: Logic-level gate enables direct interface with microcontroller GPIO; 175°C rating ensures reliability during sustained overload events.

Use Scenario: Dimmable constant-current LED string driver for architectural lighting and signage.

IC Role / Device Role: PWM-controlled current sink regulating LED current up to 10 A peak.

Use Value: Low gate charge and fast turn-off minimize current overshoot during dimming transitions, preserving LED lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR024ZPbF	Same die, I-Pak (TO-251) package; R_θJC = 4.28°C/W identical, but lower PCB thermal coupling due to vertical leadframe.	Better suited for through-hole prototyping or legacy board designs with I-Pak footprints.	Select when mechanical mounting or hand-soldering is required; avoid if PCB thermal relief is critical.
STP55NF06L	60 V V_DSS, 50 mΩ R_DS(on) @ 10 V, but higher Q_g (34 nC); not logic-level (V_GS(th) = 2–4 V).	Requires gate driver for full enhancement; less suitable for direct MCU drive in space-constrained designs.	Prefer only when higher voltage margin or lower R_DS(on) outweighs gate drive complexity and layout area.

Compared with IRLR024ZPbF, the D-Pak variant offers superior PCB thermal transfer and smaller footprint, while STP55NF06L trades gate simplicity for marginally lower conduction loss-making IRLU024ZPBF optimal for logic-driven, thermally sensitive 48 V-class power stages.

Availability

IRLU024ZPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, and LED lighting systems requiring stable component supply across multi-year production cycles.

Supply support for IRLU024ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion-designed specifically for demanding applications in industrial automation, renewable energy inverters, and intelligent power distribution.

FAQ

Is IRLU024ZPBF suitable for direct connection to a 3.3 V microcontroller GPIO?

Yes. With V_GS(th) ranging from 1.0 V to 3.0 V and guaranteed R_DS(on) ≤ 80 mΩ at V_GS = 4.5 V, it achieves full enhancement using standard 3.3 V logic outputs. Gate capacitance (C_iss = 380 pF) ensures minimal drive current demand-typically <1 mA peak during switching.

What is the maximum continuous current at 85°C case temperature?

Per the Absolute Maximum Ratings table and Fig. 9, continuous drain current derates linearly from 16 A at 25°C to 11 A at 100°C. At 85°C case temperature, the maximum continuous current is approximately 12.6 A, assuming V_GS = 10 V and adequate PCB copper area for heat spreading.

Does IRLU024ZPBF require a gate resistor for stability?

A small gate resistor (10–47 Ω) is recommended to dampen ringing caused by gate loop inductance and Miller effect. While not strictly required for basic on/off operation, it improves EMI performance and prevents false turn-on during fast dV/dt transients-especially in half-bridge or high-noise industrial environments.

Can this MOSFET replace IRLU024N in existing designs?

No. IRLU024N is obsolete and has different R_DS(on) (75 mΩ), higher Q_g (12 nC), and no avalanche rating. IRLU024ZPBF offers lower on-resistance, faster switching, and certified repetitive avalanche capability-requiring validation of gate drive timing and thermal margins before drop-in replacement.

IRLU024ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 58mOhm @ 9.6A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.9 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 380 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

IRLU024ZPBF FAQ

1.How can I place an order for IRLU024ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU024ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU024ZPBF reliable?

The price and inventory of IRLU024ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU024ZPBF is usually 5 days.

3.What payment methods are accepted for IRLU024ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU024ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU024ZPBF?

IRLU024ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU024ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU024ZPBF?

For technical support, including IRLU024ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU024ZPBF requirements.

6.How does Aetrix verify that IRLU024ZPBF is sourced from the original manufacturer or authorized distributors?

All IRLU024ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU024ZPBF meets industry standards.

7.What is the process for return or replacement of IRLU024ZPBF?

All IRLU024ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLU024ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU024ZPBF part is unused and in its original packaging.

Return procedure for IRLU024ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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