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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU2705

Name: IRLU2705
Brand: Infineon Technologies
SKU: IRLU2705
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLU2705

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU2705.pdf

Description:: MOSFET N-CH 55V 28A I-PAK

Quantity:: RFQ Add To RFQ list

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Inventory:8,958

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Product details

Overview

IRLU2705 from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in TO-251AA (I-Pak) package, rated for 55 V V_DS, 28 A continuous drain current at 25°C, and 0.040 Ω R_DS(on) at V_GS = 10 V. It features ultra-low on-resistance, fast switching, full avalanche rating, and surface-mount-compatible straight-lead through-hole mounting-used in DC-DC converters, motor drivers, and power supply synchronous rectification.

For engineers reviewing the IRLU2705 datasheet, IRLU2705 pinout, IRLU2705 application, or IRLU2705 equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), 110 mJ single-pulse avalanche energy, 76–110 ns reverse recovery time, and thermal resistance of 110 °C/W junction-to-ambient-critical for high-efficiency, thermally constrained industrial power stages.

Technical Context

The IRLU2705 employs fifth-generation HEXFET process technology to minimize R_DS(on) per die area while maintaining rugged unclamped inductive switching capability. Its body diode exhibits V_SD = 1.3 V at 17 A and 25°C, with Q_rr = 190–290 nC and trr = 76–110 ns under specified di/dt conditions.

Gate charge characteristics are defined by Q_g = 25 nC, Q_gs = 5.2 nC, and Q_gd = 14 nC at V_DS = 44 V, enabling efficient PWM control with low driver loss. Switching times include td(on) = 8.9 ns, tr = 100 ns, td(off) = 21 ns, and tf = 29 ns under standardized test conditions (V_DD = 28 V, I_D = 16 A, R_G = 6.5 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum blocking voltage before avalanche onset; defines usable input voltage range in buck/boost topologies
R_DS(on)	0.040 Ω @ V_GS = 10 V - enables ≤1.6 W conduction loss at 20 A, critical for thermal management in compact PCB layouts
I_D (25°C)	28 A - continuous current rating at case temperature 25°C; derates linearly at 0.45 W/°C above 25°C
E_AS	110 mJ - single-pulse avalanche energy; supports reliable operation during inductive load turn-off transients without snubbers
Q_g	25 nC - total gate charge; determines minimum driver peak current and switching loss in high-frequency (>100 kHz) applications
trr / Q_rr	76–110 ns / 190–290 nC - body diode recovery behavior; directly impacts shoot-through risk and efficiency in synchronous rectifiers
V_GS(th)	1.0–2.0 V - logic-level threshold; ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs without level-shifting

Pinout & Package

IRLU2705 uses the TO-251AA (I-Pak) package-a three-lead, through-hole variant of the D-PAK footprint with straight leads for axial mounting and wave soldering. Thermal performance is optimized via exposed drain pad connected to pins 2 and 4.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; accepts logic-level voltage (≤2.0 V threshold) to modulate channel conductivity
2	Drain	Main high-side current path; electrically tied to exposed metal tab for thermal and electrical connection
3	Source	Reference node for gate drive and current return; forms common node with body diode cathode
4	Drain	Second drain connection; paralleled with Pin 2 to reduce package inductance and improve current sharing

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 3.3 V or 5 V controllers-eliminates need for gate driver ICs in low-voltage embedded systems
Fully avalanche-rated	Withstands 110 mJ unclamped inductive energy-enables robust operation in relay driving and solenoid control without external clamping
Ultra-low R_DS(on)	0.040 Ω at 10 V gate drive-reduces conduction loss by >35% vs. legacy 55 V MOSFETs, improving efficiency in 12 V–48 V power rails
Fast body diode	trr = 76–110 ns and Q_rr = 190–290 nC-minimizes reverse recovery loss in synchronous buck converters operating up to 500 kHz
TO-251AA mechanical form	Straight-lead through-hole package with dual drain pins-offers higher mechanical reliability and thermal transfer than SO-8 in high-vibration environments

Applications

DC-DC Synchronous Rectifier

Industrial Motor Driver Stage

Use Scenario: Secondary-side switch in isolated 12 V–24 V output DC-DC converters for PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce forward drop and improve efficiency.

Use Value: Achieves ≥3% efficiency gain over 40 V Schottky due to 0.040 Ω R_DS(on) and fast trr, lowering thermal load on 2-layer PCBs.

Use Scenario: Half-bridge low-side switch controlling 24 V brushed DC motors in automated valve actuators.

IC Role / Device Role / Timing Role: Power stage switch with integrated body diode conducting flyback current during PWM off-time.

Use Value: Full avalanche rating absorbs 110 mJ inductive kickback without failure, eliminating need for external TVS in Class A industrial enclosures.

Automotive Body Control Module

LED Constant-Current Driver

Use Scenario: Load switch for 12 V lighting circuits (headlamp positioners, interior ambient lighting) in BCMs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled directly by 5 V MCU GPIO with minimal external components.

Use Value: Logic-level V_GS(th) ensures full turn-on at 4.5 V supply, supporting wide-input automotive battery range (9–16 V) without gate boost.

Use Scenario: Constant-current sink for high-brightness LED strings in architectural lighting fixtures.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator using source degeneration and thermal feedback.

Use Value: Low R_DS(on) minimizes voltage headroom requirement (≤0.8 V drop at 20 A), enabling higher LED string count per 24 V rail.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR2705	Same die, D-PAK (TO-252AA) surface-mount package; R_DS(on) identical but thermal resistance R_θJA = 50 °C/W vs. 110 °C/W for IRLU2705	Preferred for automated SMT assembly; unsuitable for manual through-hole prototyping or high-vibration mechanical mounting	Select IRLR2705 when board space and reflow capability permit; choose IRLU2705 for hand-soldered, mechanically stressed, or mixed-technology boards.
STP55NF06L	60 V V_DS, 50 A I_D, 0.014 Ω R_DS(on); higher current rating but requires 4.5 V min. V_GS for full enhancement	Better suited for 48 V systems and higher-power motor drives; not logic-level compatible with 3.3 V MCUs	Choose STP55NF06L only if system voltage exceeds 55 V or current demand exceeds 28 A; verify gate drive strength for V_GS(th) margin.

Compared with IRLR2705 and STP55NF06L, the IRLU2705 uniquely balances logic-level drivability, through-hole mechanical robustness, and 55 V/28 A capability-making it optimal for cost-sensitive, medium-power industrial controls where SMT infrastructure is unavailable or vibration tolerance is mandatory.

Availability

IRLU2705 is available at Aetrix Electronics and suitable for DC-DC converters, motor driver stages, automotive body control modules, and LED constant-current drivers requiring stable component supply across extended production lifecycles.

Supply support for IRLU2705 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and system-level solutions.

The IRLU2705 belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, ruggedized switching in industrial power conversion, motor control, and automotive body electronics.

FAQ

Is IRLU2705 pin-compatible with IRLR2705?

No-IRLU2705 uses TO-251AA (I-Pak) with straight leads and four terminals (G-D-S-D), while IRLR2705 uses TO-252AA (D-PAK) with gull-wing surface-mount leads and three terminals (G-D-S). Footprints and soldering methods differ fundamentally; mechanical adaptation is required for substitution.

What is the maximum safe operating frequency for IRLU2705 in PWM applications?

Based on published switching times (td(on) = 8.9 ns, tf = 29 ns) and gate charge (Q_g = 25 nC), the IRLU2705 supports clean switching up to 1 MHz in low-duty-cycle, low-inductance layouts. Practical limits are set by layout parasitics and driver capability-not device intrinsic speed-so 200–500 kHz is typical for robust industrial designs.

Can IRLU2705 replace a bipolar transistor in a linear regulator application?

Yes, but with caveats: its low R_DS(on) enables low-dropout operation, yet thermal stability depends on proper heatsinking due to R_θJA = 110 °C/W. Unlike BJTs, it lacks inherent current limiting-external sensing and protection circuitry is mandatory to prevent thermal runaway under overload.

Does IRLU2705 require a gate resistor for EMI suppression?

A gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 94 pF) and PCB inductance. Without it, fast edges may excite parasitic LC networks, increasing radiated emissions-especially critical in automotive EMC-compliant designs per CISPR 25 Class 5.

IRLU2705 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 880 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

IRLU2705 FAQ

1.How can I place an order for IRLU2705 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU2705 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU2705 reliable?

The price and inventory of IRLU2705 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU2705 is usually 5 days.

3.What payment methods are accepted for IRLU2705?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU2705 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU2705?

IRLU2705 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU2705 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU2705?

For technical support, including IRLU2705 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU2705 requirements.

6.How does Aetrix verify that IRLU2705 is sourced from the original manufacturer or authorized distributors?

All IRLU2705 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU2705 meets industry standards.

7.What is the process for return or replacement of IRLU2705?

All IRLU2705 units undergo pre-shipment inspection (PSI). If there is an issue with IRLU2705, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU2705 part is unused and in its original packaging.

Return procedure for IRLU2705:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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