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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU2905

Name: IRLU2905
Brand: Infineon Technologies
SKU: IRLU2905
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLU2905

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU2905.pdf

Description:: MOSFET N-CH 55V 42A I-PAK

Quantity:: RFQ Add To RFQ list

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Inventory:3,163

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Product details

Overview

IRLU2905 from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in TO-251AA (IPAK) package, rated for 55 V V_DS, 42 A continuous drain current at T_C = 25°C, and 0.027 Ω R_DS(on) at V_GS = 10 V. It features ultra-low on-resistance, fast switching, full avalanche rating, and is optimized for DC-DC converters, motor control, and power supply synchronous rectification.

For engineers reviewing the IRLU2905 datasheet, IRLU2905 pinout, IRLU2905 application, or IRLU2905 equivalent, key selection criteria include gate threshold voltage (1.0–2.0 V), total gate charge (48 nC), diode reverse recovery time (80–120 ns), and thermal resistance (R_θJA = 50 °C/W on 1"² PCB), all critical for high-efficiency, thermally constrained switch-mode designs.

Technical Context

The IRLU2905 employs fifth-generation HEXFET® process technology to minimize R_DS(on) per die area while maintaining rugged unclamped inductive switching capability (E_AS = 210 mJ). Its logic-level gate drive (V_GS(th) ≤ 2.0 V) enables direct interfacing with 3.3 V/5 V microcontrollers without level-shifting.

It integrates a fast, low-V_SD body diode (1.3 V @ 25 A, t_rr = 80–120 ns) and exhibits low output capacitance (C_oss = 400 pF @ 25 V), supporting high-frequency operation up to several hundred kHz in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage in high-side or low-side switch configurations
R_DS(on)	0.027 Ω @ V_GS = 10 V - Enables <1.1 W conduction loss at 42 A, critical for thermal management
I_D (continuous)	42 A @ T_C = 25°C - Supports high-current loads in industrial power stages
Q_g	48 nC - Determines gate driver power requirement and switching speed trade-off
t_rr	80–120 ns - Limits diode recovery losses and EMI in synchronous buck or half-bridge circuits
E_AS	210 mJ - Ensures robustness against inductive energy spikes during fault conditions
R_θJA	50 °C/W (PCB mount) - Defines heatsinking requirements for 110 W power dissipation at T_C = 25°C

Pinout & Package

IRLU2905 uses the TO-251AA (I-Pak) surface-mount-compatible through-hole package with three leads and an exposed drain tab for thermal conduction. The package supports wave soldering and provides mechanical stability for high-vibration environments.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	Logic-level input controlling channel conduction; requires ≤2.0 V threshold for full turn-on
2 (Lead)	Drain	Main high-side or low-side power path terminal; electrically connected to exposed metal tab
3 (Lead)	Source	Reference node for gate drive and current return; ties to ground or low-side switch node
4 (Tab)	Drain (Thermal)	Electrically and thermally tied to Drain (Pin 2); must be soldered to copper pour for thermal performance

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 4.0 V gate drive (R_DS(on) = 0.040 Ω), enabling direct MCU interface
Ultra-low R_DS(on)	0.027 Ω at 10 V reduces conduction loss by >35% vs. legacy 55 V MOSFETs in same package
Fast body diode	1.3 V forward drop and 80 ns typical reverse recovery support efficient synchronous rectification
Full avalanche rating	210 mJ single-pulse energy handling eliminates need for external snubbers in inductive switching
Advanced thermal design	Exposed drain tab and low R_θJC = 1.4 °C/W allow >100 W dissipation with minimal heatsink

Applications

Motor Drive Stage

DC-DC Synchronous Rectifier

Use Scenario: H-bridge or 3-phase inverter driving brushed DC or stepper motors up to 48 V bus.

IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (t_f = 15 ns) to minimize shoot-through risk and enable PWM frequencies ≥20 kHz.

Use Value: 0.027 Ω R_DS(on) cuts I²R losses by ~40% vs. comparable 55 V MOSFETs, reducing heatsink size by 30%.

Use Scenario: Secondary-side synchronous rectification in isolated 12 V/24 V output DC-DC converters.

IC Role / Device Role / Timing Role: Body-diode-replacement switch timed to conduct only during intended half-cycle, leveraging 80 ns t_rr.

Use Value: 1.3 V V_SD and low Q_rr (210–320 nC) reduce conduction and recovery losses, improving efficiency by 1.2–1.8% at full load.

Industrial Power Supply

Overcurrent Protection Switch

Use Scenario: Primary-side high-current switching in 500–1000 W AC-DC front-end or PFC stage.

IC Role / Device Role / Timing Role: Main switching element operating at 65–100 kHz with unclamped inductive switching stress.

Use Value: 210 mJ E_AS rating ensures reliable operation under line transients and overload without derating.

Use Scenario: Solid-state replacement for electromechanical relays in battery disconnect or load dump protection.

IC Role / Device Role / Timing Role: Normally-open power switch controlled by microcontroller GPIO, activated on fault detection.

Use Value: 42 A continuous rating and 160 A pulsed capability handle surge currents up to 10× nominal without latch-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 0.018 Ω @ 10 V, V_DS = 60 V, TO-220 package	Higher current density but larger footprint and no exposed drain tab	Preferred where higher voltage margin and lower R_DS(on) justify through-hole mounting and added thermal mass
IRFZ44NPBF	R_DS(on) = 0.028 Ω @ 10 V, V_DS = 55 V, TO-220 package, non-logic-level (V_GS(th) = 2–4 V)	Requires 10 V gate drive for full enhancement; slower t_r/t_f	Suitable when existing 10 V gate drivers exist and PCB space allows TO-220 footprint

Compared with STP55NF06L and IRFZ44NPBF, the IRLU2905 uniquely combines logic-level drive, TO-251AA through-hole compatibility, and industry-leading R_DS(on)/thermal resistance ratio-making it optimal for space-constrained, low-voltage-control industrial power modules.

Availability

IRLU2905 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converter designs, and overcurrent protection circuits requiring stable component supply across multi-year production cycles.

Supply support for IRLU2905 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The IRLU2905 belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control systems.

FAQ

What is the maximum junction temperature for IRLU2905?

The IRLU2905 has a specified operating junction temperature range of –55°C to +175°C. Its absolute maximum rating is 175°C, and sustained operation above this value risks permanent parametric shift or failure. Thermal design must ensure T_J remains within limits using R_θJA = 50 °C/W (PCB mount) and R_θJC = 1.4 °C/W data.

Can IRLU2905 be used with 3.3 V microcontroller GPIOs?

Yes - the IRLU2905 is a logic-level MOSFET with V_GS(th) max of 2.0 V and R_DS(on) = 0.040 Ω at V_GS = 4.0 V. At 3.3 V, it achieves partial enhancement (R_DS(on) ≈ 0.055 Ω), sufficient for low-duty-cycle or low-current applications; for full 42 A capability, 5 V drive is recommended.

Does IRLU2905 have integrated ESD protection?

No - the IRLU2905 does not include on-die ESD protection circuitry. Gate oxide is sensitive to electrostatic discharge; standard handling practices (grounded workstations, anti-static packaging, series gate resistors ≤100 Ω) are required to prevent damage during assembly or testing.

How does the body diode performance compare to discrete Schottky diodes?

The IRLU2905's body diode has V_SD = 1.3 V @ 25 A and t_rr = 80–120 ns - higher forward drop and slower recovery than most Schottky diodes (e.g., 0.5 V, <10 ns). However, its monolithic integration eliminates layout parasitics and enables precise timing control in synchronous rectifiers where gate drive alignment matters more than ultra-low V_F.

IRLU2905 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 27mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

IRLU2905 FAQ

1.How can I place an order for IRLU2905 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU2905 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU2905 reliable?

The price and inventory of IRLU2905 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU2905 is usually 5 days.

3.What payment methods are accepted for IRLU2905?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU2905 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU2905?

IRLU2905 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU2905 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU2905?

For technical support, including IRLU2905 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU2905 requirements.

6.How does Aetrix verify that IRLU2905 is sourced from the original manufacturer or authorized distributors?

All IRLU2905 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU2905 meets industry standards.

7.What is the process for return or replacement of IRLU2905?

All IRLU2905 units undergo pre-shipment inspection (PSI). If there is an issue with IRLU2905, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU2905 part is unused and in its original packaging.

Return procedure for IRLU2905:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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