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Infineon Technologies IRLU2905PBF

Part No.:
IRLU2905PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIRLU2905PBF.pdf
Description:
MOSFET N-CH 55V 42A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,686

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Product details

Overview

IRLU2905PBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel Power MOSFET in TO-251AA (I-Pak) package, rated for 55 V V(BR)DSS, 42 A continuous drain current at 25°C, and 0.027 Ω RDS(on) at VGS = 10 V. It features ultra-low on-resistance, fast switching, full avalanche rating, and is optimized for DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRLU2905PBF datasheet, IRLU2905PBF pinout, IRLU2905PBF application, or IRLU2905PBF equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), 210 mJ single-pulse avalanche energy, 48 nC total gate charge, and thermal resistance of 110 °C/W (junction-to-ambient, PCB mount), critical for thermally constrained through-hole power stages.

Technical Context

This fifth-generation HEXFET device uses advanced planar processing to minimize RDS(on) per die area while maintaining ruggedness. Its body diode exhibits 1.3 V forward voltage at 25 A and 80–120 ns reverse recovery time, enabling efficient freewheeling in hard-switched topologies.

The MOSFET supports high dv/dt immunity (5.0 V/ns) and operates across –55°C to +175°C junction temperature range. Gate charge distribution (Qgs = 8.6 nC, Qgd = 25 nC) and low output capacitance (Coss = 400 pF at 25 V) support high-frequency PWM operation up to several hundred kHz in isolated and non-isolated DC-DC designs.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS55 V - Maximum blocking voltage before avalanche onset; defines maximum input/output rail tolerance in buck, boost, and half-bridge stages.
RDS(on)0.027 Ω @ VGS = 10 V - Conduction loss of ≤0.28 W at 25 A; enables high-efficiency operation without forced air cooling in 12–48 V systems.
ID (TC = 25°C)42 A - Continuous current capability limited by package thermal resistance; requires ≥1"² FR-4 copper area for full rating.
EAS210 mJ - Single-pulse avalanche energy; allows safe operation during inductive turn-off transients without external snubbers in relay/motor drivers.
Qg48 nC - Total gate charge determines driver strength requirement; compatible with standard 1-A peak gate drivers at ≤500 kHz switching.
trr / Qrr80–120 ns / 210–320 nC - Body diode recovery behavior impacts shoot-through risk and EMI in synchronous rectifiers and H-bridges.
TJ Range–55°C to +175°C - Enables deployment in under-hood automotive, industrial motor controls, and outdoor power equipment.

Pinout & Package

IRLU2905PBF is housed in a TO-251AA (I-Pak) surface-mount-compatible through-hole package with three leads: Source (S), Drain (D), and Gate (G). The lead frame design supports manual or wave-solder assembly, with internal source and drain inductances (LS = 7.5 nH, LD = 4.5 nH) specified for layout-aware switching analysis.

Pin/TerminalCircuit RoleDesign Meaning
Lead 1 (Source)Power return path and gate referenceLow-inductance connection point for PCB ground plane; ties gate drive return and power ground to minimize noise coupling.
Lead 2 (Drain)Main power conduction pathConnected directly to die backside; must be routed with wide copper to handle 42 A and minimize voltage overshoot during switching.
Lead 3 (Gate)Control terminal for channel modulationHigh-impedance input requiring <100 nA leakage control; sensitive to ESD and layout parasitics-requires short, shielded trace.

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS = 4.0 V (RDS(on) = 0.040 Ω), enabling direct interface with 3.3 V/5 V microcontrollers and PWM ICs without level-shifting.
Fully avalanche ratedGuaranteed 210 mJ single-pulse energy handling eliminates need for overvoltage clamping in inductive load switching applications.
Ultra-low RDS(on)0.027 Ω at 10 V reduces conduction losses by >35% vs. legacy 40 V MOSFETs, improving efficiency in 12 V battery-powered systems.
Fast body diode80 ns trr and 210 nC Qrr enable use as synchronous rectifier in flyback and LLC converters without significant reverse recovery penalty.
Lead-free constructionRoHS-compliant packaging (PBF suffix) meets IPC-J-STD-020 moisture sensitivity level 1, supporting standard reflow and wave solder profiles.

Applications

DC-DC Converter Primary SwitchBrushed DC Motor Driver High-Side

Use Scenario: 24 V input, 500 kHz synchronous buck converter delivering 20 A to FPGA core voltage rail.

IC Role / Device Role / Timing Role: Main switching FET controlling power delivery; duty cycle modulated by controller IC to regulate output voltage.

Use Value: Low RDS(on) minimizes conduction loss (<0.7 W), while 48 nC Qg ensures clean 500 kHz switching with minimal gate drive power.

Use Scenario: 36 V battery-powered robotic actuator with bidirectional brushed motor control.

IC Role / Device Role / Timing Role: High-side switch enabling forward drive mode; paired with low-side N-MOSFET for H-bridge configuration.

Use Value: Logic-level threshold allows direct drive from MCU GPIO; 175°C max TJ supports sealed enclosure operation without derating.

Industrial Relay ReplacementHot-Swap Controller Back-End Switch

Use Scenario: Solid-state replacement for 30 A mechanical relay in programmable logic controller (PLC) output module.

IC Role / Device Role / Timing Role: Load switching element activated/deactivated via optocoupler-isolated control signal.

Use Value: Avalanche rating absorbs inductive kickback from solenoid loads; 160 A pulsed ID handles relay coil surge currents.

Use Scenario: 48 V telecom shelf with hot-swap insertion protection and inrush limiting.

IC Role / Device Role / Timing Role: Inrush current limiter and fault isolation switch placed between backplane and board-level power domain.

Use Value: Low RDS(on) limits voltage drop during steady-state operation; fast turn-on (11 ns td(on)) enables precise inrush control timing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR2905PBFSame die in D-Pak (TO-252AA); RDS(on) identical, but lower RθJA (50 °C/W vs. 110 °C/W) due to surface-mount thermal path.Suitable only for PCB-mounted designs with thermal pads; not compatible with through-hole assembly lines.Select when thermal performance is prioritized and SMT infrastructure is available.
STP55NF06L60 V rating, 0.018 Ω RDS(on) at 10 V, but higher Qg (72 nC); VGS(th) = 1.0–2.5 V.Better conduction loss at high current, but slower switching and higher gate drive demand; less robust avalanche (150 mJ).Prefer for high-current, low-frequency applications where efficiency outweighs switching loss.

Compared with IRLR2905PBF and STP55NF06L, IRLU2905PBF uniquely balances through-hole manufacturability, logic-level drivability, and proven avalanche ruggedness-making it optimal for cost-sensitive, thermally moderate, and reliability-critical industrial control modules.

Availability

IRLU2905PBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drives, industrial relay replacements, and hot-swap controllers requiring stable component supply across extended production lifecycles.

Supply support for IRLU2905PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET product family, a global benchmark for high-reliability power MOSFETs since 1978.

The IRLU series belongs to Infineon's logic-level N-channel MOSFET portfolio, engineered specifically for direct microcontroller interfacing in industrial automation, power tools, and embedded power systems where gate drive simplicity and ruggedness are essential.

FAQ

Is IRLU2905PBF suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage of 1.0–2.0 V and full enhancement at VGS = 4.0 V (RDS(on) = 0.040 Ω), IRLU2905PBF reliably switches on using 3.3 V logic outputs. However, RDS(on) increases to 0.040 Ω at 4 V, so conduction loss rises ~50% versus 10 V drive-designers should verify thermal margin at full load.

What is the maximum recommended PCB copper area for thermal performance?

Per IRF application note AN-994, the 110 °C/W RθJA value assumes mounting on a 1" square FR-4 PCB. Increasing copper area beyond this yields diminishing returns; a minimum 0.5" × 0.5" thermal pad with 4+ thermal vias to inner ground planes is recommended for sustained 30 A operation at ambient ≤60°C.

Does IRLU2905PBF have integrated ESD protection?

No. IRLU2905PBF lacks on-die ESD protection structures. Gate oxide is rated for ±16 V VGS, but static discharge exceeding ±2 kV HBM can cause failure. External 10 kΩ gate resistor and 12 V Zener clamp between gate and source are strongly advised in handling and PCB layout.

Can IRLU2905PBF replace IRLU2905 without derating?

Yes. IRLU2905PBF is the lead-free (Pb-free) version of IRLU2905, with identical electrical specifications, thermal performance, and mechanical dimensions. No derating is required; it complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL Class 1.

IRLU2905PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 5 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
1700 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK

IRLU2905PBF FAQ

1.How can I place an order for IRLU2905PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU2905PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU2905PBF reliable?

The price and inventory of IRLU2905PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU2905PBF is usually 5 days.

3.What payment methods are accepted for IRLU2905PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU2905PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU2905PBF?

IRLU2905PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU2905PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU2905PBF?

For technical support, including IRLU2905PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU2905PBF requirements.

6.How does Aetrix verify that IRLU2905PBF is sourced from the original manufacturer or authorized distributors?

All IRLU2905PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU2905PBF meets industry standards.

7.What is the process for return or replacement of IRLU2905PBF?

All IRLU2905PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLU2905PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU2905PBF part is unused and in its original packaging.

Return procedure for IRLU2905PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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