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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU2905ZPBF

Name: IRLU2905ZPBF
Brand: Infineon Technologies
SKU: IRLU2905ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLU2905ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU2905ZPBF.pdf

Description:: MOSFET N-CH 55V 42A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLU2905ZPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, rated for 55 V V_DSS, 42 A continuous drain current at T_C = 25°C, and 13.5 mΩ R_DS(on) at V_GS = 10 V. It features 175°C maximum junction temperature, fast switching (t_d(on) = 14 ns, t_f = 33 ns), and rated repetitive avalanche capability-designed for high-efficiency DC-DC converters, motor drives, and industrial power switches.

For engineers reviewing the IRLU2905ZPBF datasheet, IRLU2905ZPBF pinout, IRLU2905ZPBF application, or IRLU2905ZPBF equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–3.0 V), low conduction loss at 5 V gate bias, body diode recovery performance (t_rr = 22–33 ns), and thermal robustness under pulsed load conditions.

Technical Context

This HEXFET® device uses advanced silicon processing to minimize R_DS(on) per unit area while maintaining ruggedness. Its gate threshold voltage range (1.0–3.0 V) ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs, and its 175°C T_J(max) supports operation in thermally constrained enclosures without derating penalties up to 100°C case temperature.

The MOSFET integrates a low-Q_rr (14–21 nC), fast-recovery body diode with V_SD = 1.3 V at 36 A, enabling efficient synchronous rectification and unclamped inductive switching. Its C_iss = 1570 pF, C_oss = 230 pF, and C_rss = 130 pF support stable high-frequency PWM control with minimal Miller-induced shoot-through risk.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche; suitable for 48 V nominal bus systems with 20% transient margin.
R_DS(on) @ V_GS = 10 V	13.5 mΩ max - Conduction loss of ≤24 W at 42 A, enabling compact heatsink design in high-current switch nodes.
I_D @ T_C = 25°C	42 A - Continuous current rating with PCB-mount thermal path; limited by package, not silicon.
t_rr & Q_rr	22–33 ns / 14–21 nC - Fast body diode recovery reduces switching loss and EMI in hard-switched topologies.
T_J(max)	175°C - Enables sustained operation in sealed industrial enclosures without active cooling.
Q_g & Q_gd	23–35 nC / 12 nC - Low total and Miller charge enables <100 ns turn-off with 15 Ω gate resistor at 5 V drive.
R_θJC	1.38 °C/W - Confirmed junction-to-case thermal resistance; allows direct heatsink mounting for >60 W dissipation.

Pinout & Package

D-Pak (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection; standard 3-pin surface-mount footprint compatible with automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab/Drain)	Drain (D)	Exposed copper pad - primary heat path and high-current output node; must be soldered to large copper pour or heatsink.
Pin 2 (Source)	Source (S)	Low-side reference terminal; connects to ground or return path; carries full load current and body diode reverse recovery current.
Pin 3 (Gate)	Gate (G)	Control input; requires low-impedance drive (<15 Ω series resistor) to manage dV/dt and prevent oscillation during fast transitions.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS = 4.5 V (R_DS(on) ≤ 22.5 mΩ), enabling direct interface with 3.3 V/5 V MCUs without level-shifting.
Repetitive avalanche rated	Rated for unlimited repetitive avalanche events up to T_J(max) = 175°C, validated per AN-1005 test methodology.
Ultra-low R_DS(on)/area	13.5 mΩ at 10 V in D-Pak - achieves same conduction loss as larger TO-220 devices, reducing board space and thermal mass.
Fast body diode	t_rr = 22 ns typical, Q_rr = 14 nC - minimizes reverse recovery loss and voltage overshoot in flyback and buck-boost converters.
Lead-free and RoHS compliant	Pb-free plating and halogen-free molding compound - meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1).

Applications

Brushless DC Motor Drive

48 V Telecom DC-DC Converter

Use Scenario: Half-bridge high-side and low-side switching in 3-phase BLDC inverters for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: Power switch in synchronous rectification stage; handles 30–40 A peak phase current with <100 ns dead-time control.

Use Value: Low R_DS(on) and fast t_f reduce conduction + switching losses by ≥18% vs. legacy 20 mΩ MOSFETs at 20 kHz PWM.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V telecom brick converters.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diodes; driven by transformer-coupled gate signal with 5 V amplitude.

Use Value: Body diode V_SD = 1.3 V and Q_rr = 14 nC enable >95% efficiency at full load, eliminating forced-air cooling.

Industrial PLC Output Module

Automotive LED Headlamp Driver

Use Scenario: Solid-state relay replacement in programmable logic controller digital output cards driving solenoids and contactors.

IC Role / Device Role / Timing Role: Low-side load switch with integrated overtemperature shutdown via external thermal feedback loop.

Use Value: 175°C T_J(max) and 42 A rating allow direct mounting to metal chassis, eliminating discrete thermal sensors and simplifying BOM.

Use Scenario: High-side current-controlled switch for adaptive front-lighting system (AFS) matrix LED arrays.

IC Role / Device Role / Timing Role: PWM-controlled current source with fast turn-off (t_f = 33 ns) to suppress LED tail current during beam pattern transitions.

Use Value: Logic-level V_GS(th) ensures full enhancement at automotive battery voltages down to 9 V, preventing dimming during cold cranking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR2905ZPbF	Same die, I-Pak (TO-251) package; R_θJA = 110 °C/W vs. 40 °C/W for D-Pak; identical R_DS(on), Q_g, and avalanche rating.	Lower thermal performance in PCB-mount applications; preferred only where through-hole assembly or mechanical retention is required.	Select IRLR2905ZPbF only when board layout mandates vertical mounting or mechanical screw-down retention.
STP55NF06L	60 V V_DSS, 55 A I_D, 11 mΩ R_DS(on); higher gate charge (Q_g = 55 nC); no specified repetitive avalanche rating.	Better conduction loss but slower switching; unsuitable for high-frequency (>100 kHz) or avalanche-prone inductive loads.	Prefer STP55NF06L only in low-frequency, high-current linear-regulator-style applications where thermal headroom exceeds 30°C.

Compared with IRLU2905ZPBF, IRLR2905ZPbF trades thermal efficiency for mechanical robustness, while STP55NF06L offers lower R_DS(on) at the cost of higher switching loss and unverified avalanche endurance-making IRLU2905ZPBF optimal for thermally constrained, fast-switching, inductive-load applications.

Availability

IRLU2905ZPBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive lighting systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRLU2905ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The IRLU2905ZPBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and transportation power systems where thermal resilience and avalanche robustness are critical.

FAQ

Is IRLU2905ZPBF suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) = 1.0–3.0 V and guaranteed R_DS(on) ≤ 22.5 mΩ at V_GS = 4.5 V, the device fully enhances using 3.3 V logic when paired with a low-impedance driver (e.g., TC4427). At 3.3 V, R_DS(on) rises to ~35 mΩ-acceptable for <15 A continuous loads with adequate thermal margin.

What is the maximum safe operating frequency for IRLU2905ZPBF in a buck converter?

Based on t_d(on) + t_r + t_d(off) + t_f ≈ 74 ns and Q_g/I_G timing, the device supports stable operation up to 500 kHz with 15 Ω gate resistor and 5 V drive. Above 250 kHz, gate drive strength and PCB layout parasitics become dominant loss factors-not device limitation.

Does IRLU2905ZPBF require a gate resistor, and what value is recommended?

Yes-a series gate resistor is mandatory to dampen ringing and limit peak gate current. For 5 V drive and moderate switching speed, 10–15 Ω is recommended. Lower values (≤5 Ω) improve switching speed but increase EMI risk; higher values (>22 Ω) reduce dV/dt stress but raise switching loss proportionally.

Can IRLU2905ZPBF replace IRLU2905 in existing designs?

Yes-IRLU2905ZPBF is a drop-in replacement for IRLU2905, sharing identical pinout, package, and electrical specifications. The "Z" suffix denotes enhanced avalanche rating and lead-free compliance; all absolute maximum ratings and dynamic parameters match or exceed the legacy part.

IRLU2905ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.5mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRLU2905ZPBF FAQ

1.How can I place an order for IRLU2905ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU2905ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU2905ZPBF reliable?

The price and inventory of IRLU2905ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU2905ZPBF is usually 5 days.

3.What payment methods are accepted for IRLU2905ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU2905ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU2905ZPBF?

IRLU2905ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU2905ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU2905ZPBF?

For technical support, including IRLU2905ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU2905ZPBF requirements.

6.How does Aetrix verify that IRLU2905ZPBF is sourced from the original manufacturer or authorized distributors?

All IRLU2905ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU2905ZPBF meets industry standards.

7.What is the process for return or replacement of IRLU2905ZPBF?

All IRLU2905ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLU2905ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU2905ZPBF part is unused and in its original packaging.

Return procedure for IRLU2905ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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