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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU3103

Name: IRLU3103
Brand: Infineon Technologies
SKU: IRLU3103
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLU3103

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU3103.pdf

Description:: MOSFET N-CH 30V 55A I-PAK

Quantity:: RFQ Add To RFQ list

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Inventory:7,558

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Product details

Overview

IRLU3103 from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode power MOSFET in TO-251AA (I-PAK) package, rated for 30V V_DSS, 55A continuous drain current at T_C = 25°C, and 0.019Ω R_DS(on) at V_GS = 10V. It features ultra-low on-resistance, full avalanche rating, and fast switching for high-efficiency DC-DC converters, motor drives, and load switching in industrial power supplies.

For engineers reviewing the IRLU3103 datasheet, IRLU3103 pinout, IRLU3103 application, or IRLU3103 equivalent, key selection criteria include gate threshold voltage (1.0–2.5V), pulsed drain current (220A), junction-to-case thermal resistance (1.4°C/W), and diode reverse recovery charge (210–310nC) in hard-switching topologies.

Technical Context

This MOSFET employs fifth-generation HEXFET® process technology to minimize conduction losses while maintaining rugged unclamped inductive switching capability. Its logic-level gate drive (V_GS(th) = 1.0–2.5V) enables direct interfacing with 3.3V/5V microcontrollers without level-shifting circuitry.

The device integrates a fast, low-Q_rr body diode (t_rr = 81–120ns, Q_rr = 210–310nC) and exhibits controlled dv/dt immunity (5.0V/ns peak diode recovery), making it suitable for synchronous rectification and freewheeling paths where reverse recovery behavior critically impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage before avalanche onset; defines usable input range in 24V systems.
R_DS(on) @ V_GS=10V	0.019Ω - Conduction loss of ≤3.5W at 30A DC, enabling compact thermal design in surface-mount or through-hole layouts.
I_D @ T_C=25°C	55A - Continuous current capability under ideal heatsinking; derates to 39A at 100°C case temperature.
Q_g	50nC - Total gate charge determining driver strength requirement; supports ~1MHz switching with moderate gate drivers.
E_AS	240mJ - Single-pulse avalanche energy rating; allows safe operation under inductive turn-off transients up to specified I_AS=34A.
t_rr	81–120ns - Body diode reverse recovery time; critical for minimizing commutation loss and voltage overshoot in buck/flyback outputs.
R_θJC	1.4°C/W - Junction-to-case thermal resistance; enables precise junction temperature estimation using measured case temperature.

Pinout & Package

IRLU3103 uses the TO-251AA (I-PAK) three-lead through-hole package with isolated tab. Leads are arranged in straight-line configuration: Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). The drain-connected tab provides low-inductance thermal path and must be electrically isolated from PCB ground unless referenced to system drain potential.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead 1)	Gate	Logic-level control input; requires <100nA leakage handling and 50nC total charge for full enhancement.
Pin 2 (Lead 2)	Drain	Main high-side or low-side power terminal; connected internally to metal tab for thermal conduction and low-inductance current path.
Pin 3 (Lead 3)	Source	Reference node for gate drive and current sensing; forms return path for load current and body diode conduction.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.0–2.5V - Enables direct drive from 3.3V/5V MCUs without external level shifters or gate drivers.
Ultra-low R_DS(on)	0.019Ω @ 10V - Reduces conduction loss by >40% vs. legacy 30V MOSFETs, improving efficiency in high-current 12–24V rails.
Full avalanche rated	E_AS = 240mJ - Guarantees robustness against inductive switching stress without external snubbers in relay/motor drive circuits.
Fast body diode	Q_rr = 210–310nC, t_rr = 81–120ns - Minimizes reverse recovery loss and EMI in synchronous rectifiers and half-bridge freewheeling.
Lead-free construction	PbF suffix - Complies with RoHS Directive 2011/65/EU; compatible with standard SnAgCu reflow profiles up to 300°C (10s).

Applications

DC-DC Converter High-Side Switch

Brushed DC Motor H-Bridge Low-Side

Use Scenario: 24V input, 5–15A output synchronous buck converter in programmable logic controller (PLC) power module.

IC Role / Device Role / Timing Role: High-side main switch controlling duty-cycle-dependent power delivery; operates at 200–500kHz with 10V gate drive.

Use Value: 0.019Ω R_DS(on) limits conduction loss to <1.7W at 12A, reducing heatsink size by 35% versus 0.03Ω alternatives.

Use Scenario: Bidirectional 24V/10A brushed DC motor control in automated gate actuator with PWM speed regulation.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge leg; conducts reverse current during PWM off-time via integrated body diode.

Use Value: 81–120ns t_rr and 210–310nC Q_rr suppress voltage spikes during diode commutation, eliminating need for external Schottky catch diodes.

Industrial Load Switch

Hot-Swap Power Sequencer

Use Scenario: Remote-controlled 24V/30A power distribution unit (PDU) for factory floor sensors and actuators.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays; switched at <1Hz with soft-start gate ramping.

Use Value: 55A continuous rating and 220A pulsed capability support inrush currents from multiple downstream capacitive loads without derating.

Use Scenario: Backplane hot-swap controller in modular industrial PC chassis with 24V auxiliary rail.

IC Role / Device Role / Timing Role: Inrush current limiter and fault-isolation switch; triggered by system management controller during board insertion.

Use Value: 240mJ single-pulse avalanche energy withstands transient overvoltage during connector arcing events without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3103PbF	Same die, D-PAK (TO-252AA) surface-mount package; identical R_DS(on), Q_g, and avalanche ratings.	Requires PCB footprint change; better thermal performance in high-reliability SMT assemblies with copper pour.	Select when automated assembly, higher power density, or lower thermal resistance (R_θJA = 50°C/W vs. 110°C/W) is prioritized.
STP30NF20	200V V_DSS, 30A I_D, 0.042Ω R_DS(on); higher voltage rating but double on-resistance and slower switching.	Suitable only for 24V systems requiring margin against transients >100V; not logic-level (V_GS(th) = 2–4V).	Choose only if 200V breakdown is mandatory and gate drive voltage ≥10V is available; avoid for 3.3V MCU interfaces.

Compared with IRLR3103PbF, the IRLU3103 offers identical electrical performance in a through-hole package for manual prototyping or high-vibration environments, while STP30NF20 trades conduction efficiency and logic compatibility for higher voltage headroom-making it unsuitable for space-constrained 24V logic-driven designs.

Availability

IRLU3103 is available at Aetrix Electronics and suitable for industrial motor drives, PLC power modules, and hot-swap PDUs requiring stable component supply across extended production lifecycles.

Supply support for IRLU3103 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The HEXFET® Power MOSFET product line was developed for high-efficiency power conversion in industrial, computing, and automotive applications, emphasizing low R_DS(on), fast switching, and rugged avalanche performance in compact packages.

FAQ

What is the maximum gate-to-source voltage for reliable operation?

The absolute maximum V_GS is ±16V. Operation beyond this risks permanent gate oxide damage. For robust design, limit gate drive to ≤12V with transient clamping, especially in noisy industrial environments where ringing may exceed steady-state levels.

Can IRLU3103 be used in linear (analog) mode for current regulation?

Yes, but with strict thermal constraints: its SOA curve limits linear operation to ≤10A at V_DS = 10V (100W) for <100µs pulses. Continuous linear use requires active cooling and derating below 2A at 20V to avoid thermal runaway due to positive R_DS(on) temperature coefficient.

Does the body diode support continuous bidirectional current in H-bridge configurations?

The integrated body diode is rated for continuous source current (I_S) up to 55A at T_C = 25°C, matching the drain rating. However, its forward voltage (1.3V at 28A) and reverse recovery characteristics require careful layout to manage heat and voltage spikes during commutation.

Is the TO-251AA package lead-free and RoHS-compliant?

Yes, the "PbF" suffix confirms compliance with EU RoHS Directive 2011/65/EU. The device uses matte tin-plated leads and passes JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), supporting standard reflow profiles up to 260°C peak with no pre-bake required.

IRLU3103 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

IRLU3103 FAQ

1.How can I place an order for IRLU3103 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU3103 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU3103 reliable?

The price and inventory of IRLU3103 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU3103 is usually 5 days.

3.What payment methods are accepted for IRLU3103?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU3103 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU3103?

IRLU3103 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU3103 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU3103?

For technical support, including IRLU3103 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU3103 requirements.

6.How does Aetrix verify that IRLU3103 is sourced from the original manufacturer or authorized distributors?

All IRLU3103 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU3103 meets industry standards.

7.What is the process for return or replacement of IRLU3103?

All IRLU3103 units undergo pre-shipment inspection (PSI). If there is an issue with IRLU3103, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU3103 part is unused and in its original packaging.

Return procedure for IRLU3103:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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