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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU3110ZPBF

Name: IRLU3110ZPBF
Brand: Infineon Technologies
SKU: IRLU3110ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLU3110ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU3110ZPBF.pdf

Description:: MOSFET N-CH 100V 42A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLU3110ZPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 63A N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak package, optimized for industrial DC-DC converters and motor control. It delivers 14 mΩ R_DS(on) at V_GS = 10 V, supports 175°C junction operation, and features rated repetitive avalanche capability up to T_jmax. Its fast switching (t_r = 110 ns, t_f = 48 ns) and low gate charge (Q_g = 48 nC) enable high-efficiency hard-switched SMPS designs.

For engineers reviewing the IRLU3110ZPBF datasheet, IRLU3110ZPBF pinout, IRLU3110ZPBF application, or IRLU3110ZPBF equivalent, key selection criteria include its 100V V_DSS, 14 mΩ on-resistance at 10V drive, 175°C thermal rating, body diode reverse recovery (Q_rr = 63 nC), and D-Pak thermal performance (R_θJC = 1.05°C/W).

Technical Context

This MOSFET uses advanced planar silicon processing to minimize conduction loss while maintaining ruggedness against unclamped inductive switching. Its gate threshold voltage (V_GS(th) = 1.0–2.5 V) enables 4.5V logic-level drive compatibility, and its 34 nC Q_gs + Q_gd supports efficient gate driver sizing. The integral body diode exhibits 1.3 V forward drop at 38 A and 34–51 ns reverse recovery time.

The device's safe operating area (SOA) is defined by both R_DS(on)-limited conduction and transient thermal limits, with validated single-pulse avalanche energy of 250 mJ at T_j = 25°C. Its C_iss = 3980 pF and C_rss = 130 pF support stable high-frequency operation when paired with appropriate gate resistance (e.g., R_G = 3.7 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands 100 V drain-source blocking voltage before breakdown, suitable for 48 V bus systems with margin.
R_DS(on)	14 mΩ max @ V_GS = 10 V - Enables ≤0.89 W conduction loss at 63 A, critical for thermally constrained industrial enclosures.
I_D (T_C = 25°C)	63 A - Continuous silicon-limited current at heatsink-mounted condition, defining maximum steady-state power handling.
Q_g	48 nC max - Total gate charge determines driver power requirement and switching transition time in PWM circuits.
E_AS	250 mJ - Single-pulse avalanche energy rating confirms robustness during inductive turn-off transients without snubbers.
T_J Range	−55°C to +175°C - Extended junction temperature range allows operation in sealed industrial cabinets or near heat sources.
R_θJC	1.05°C/W - Low junction-to-case thermal resistance enables direct mounting to aluminum heatsinks without thermal interface pads.

Pinout & Package

IRLU3110ZPBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package has three leads: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the large copper tab on the bottom side.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls channel conduction; requires 4.5–16 V drive relative to source; 200 nA leakage ensures low static power draw.
D	Drain terminal	Main high-side power path; tied to exposed copper pad for low-inductance, high-current routing and thermal dissipation.
S	Source terminal	Reference node for gate drive and current sensing; internal source inductance (L_S = 7.5 nH) impacts di/dt-induced voltage spikes.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	14 mΩ at 10 V drive reduces conduction losses by >30% vs. legacy 100 V MOSFETs in 48 V telecom rectifiers.
175°C junction rating	Enables derating-free operation in ambient temperatures up to 85°C with standard heatsinking, eliminating forced-air cooling.
Repetitive avalanche capability	Rated for repeated unclamped inductive switching up to T_jmax, removing need for external clamping diodes in motor H-bridge flyback paths.
Low Q_gd/Q_g ratio	15/48 nC Miller charge fraction minimizes voltage-dependent switching delay, improving PWM linearity in digital power controllers.
Body diode Q_rr	63 nC reverse recovery charge enables synchronous rectification replacement in buck converters without shoot-through risk.

Applications

Industrial Motor Drives

Telecom DC-DC Converters

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motors in factory automation actuators.

IC Role / Device Role / Timing Role: High-side switching element controlling phase voltage; synchronized with complementary low-side MOSFET via dead-time control.

Use Value: 175°C rating permits compact heatsink design in IP65-rated enclosures; 14 mΩ R_DS(on) cuts conduction loss by 1.2 W per phase at 20 A RMS.

Use Scenario: Primary-side switch in isolated 48 V input, 12 V output LLC resonant converter for base station power supplies.

IC Role / Device Role / Timing Role: Hard-switched power transistor operating at 200–300 kHz; gate driven by transformer-coupled isolated driver.

Use Value: Low C_rss (130 pF) minimizes capacitive feedthrough during dV/dt transitions, reducing EMI filter burden and enabling smaller magnetics.

Solar MPPT Charge Controllers

EV Onboard Chargers (OBC)

Use Scenario: Synchronous rectifier in boost-stage output of photovoltaic string inverters.

IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode; body diode conducts during dead time, then channel conducts during active period.

Use Value: 1.3 V V_SD and 63 nC Q_rr reduce reverse recovery loss by 40% vs. 100 V Schottky, increasing MPPT efficiency from 97.1% to 97.8% at 5 kW.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW OBC AC/DC stage with SiC primary.

IC Role / Device Role / Timing Role: Output rectifier conducting continuous 60 A DC; body diode handles reverse recovery during zero-voltage switching transitions.

Use Value: 63 A continuous current rating and 1.05°C/W R_θJC allow direct PCB copper pour heatsinking, eliminating discrete heatsinks in space-constrained automotive modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(on) = 11.5 mΩ (lower), but Q_g = 62 nC (higher); TO-220 package; no rated avalanche energy spec.	Requires larger gate driver due to higher Q_g; lacks documented repetitive avalanche rating for inductive loads.	Preferable where conduction loss dominates and thermal mass is available; avoid in unclamped inductive switching without external protection.
IXTH110N10L2	R_DS(on) = 12.5 mΩ; 175°C rating; Q_g = 45 nC; TO-247 package; E_AS = 320 mJ (higher).	Higher peak avalanche energy supports more aggressive inductive turn-off; TO-247 offers better thermal spread but larger footprint.	Preferred for high-reliability industrial UPS or welder outputs where transient robustness outweighs board space constraints.

Compared with STP110N10F7 and IXTH110N10L2, IRLU3110ZPBF provides optimal balance of low Q_g, D-Pak compactness, and verified repetitive avalanche-making it ideal for space-limited industrial drives where gate drive efficiency and transient immunity are co-critical.

Availability

IRLU3110ZPBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and solar MPPT charge controllers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRLU3110ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The IRLU3110ZPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability industrial power conversion where thermal resilience, avalanche robustness, and low conduction loss are mandatory.

FAQ

Is IRLU3110ZPBF compatible with 4.5 V logic-level gate drive?

Yes. Its gate threshold voltage is specified from 1.0 V to 2.5 V, and R_DS(on) is characterized at V_GS = 4.5 V (16 mΩ max). At 4.5 V, it delivers ≥45 A continuous current with acceptable conduction loss, making it suitable for microcontroller-driven industrial controls without level-shifting circuitry.

What is the maximum allowable case temperature for continuous operation?

The absolute maximum case temperature is not directly specified, but the device achieves 63 A continuous drain current at T_C = 25°C and derates linearly above that point. Using the 0.95 W/°C linear derating factor, full-rated current is sustainable up to T_C ≈ 85°C before reaching the 97 W power dissipation limit at 25°C.

Does IRLU3110ZPBF require a gate resistor for stability?

Yes. A gate resistor (typically 3.7 Ω, per Fig. 6 test condition) is recommended to dampen ringing caused by L_S (7.5 nH) and L_D (4.5 nH) interacting with C_iss and C_rss. Without it, parasitic oscillation during switching can increase EMI and cause false turn-on due to Miller coupling.

Can the body diode be used for freewheeling in synchronous rectification?

Yes. The body diode is rated for 63 A continuous and 250 A pulsed source current, with V_SD = 1.3 V and Q_rr = 63 nC at 38 A. Its soft recovery characteristic (trr = 34–51 ns) makes it viable for synchronous rectification in buck and LLC topologies up to 300 kHz, provided gate timing avoids shoot-through.

IRLU3110ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3980 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRLU3110ZPBF FAQ

1.How can I place an order for IRLU3110ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU3110ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU3110ZPBF reliable?

The price and inventory of IRLU3110ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU3110ZPBF is usually 5 days.

3.What payment methods are accepted for IRLU3110ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU3110ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU3110ZPBF?

IRLU3110ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU3110ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU3110ZPBF?

For technical support, including IRLU3110ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU3110ZPBF requirements.

6.How does Aetrix verify that IRLU3110ZPBF is sourced from the original manufacturer or authorized distributors?

All IRLU3110ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU3110ZPBF meets industry standards.

7.What is the process for return or replacement of IRLU3110ZPBF?

All IRLU3110ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLU3110ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU3110ZPBF part is unused and in its original packaging.

Return procedure for IRLU3110ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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