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Infineon Technologies IRLU3705ZPBF

Part No.:
IRLU3705ZPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIRLU3705ZPBF.pdf
Description:
MOSFET N-CH 55V 42A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,381

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Product details

Overview

IRLU3705ZPBF from Infineon Technologies is a logic-level N-channel HEXFET® Power MOSFET in D-Pak (TO-252) package, designed for high-efficiency DC-DC conversion and motor control switching. It delivers 42A continuous drain current at 10V VGS, 8.0mΩ RDS(on) at 10V, 55V VDSS, and supports 175°C junction operation with rated repetitive avalanche capability up to Tjmax. Used in industrial power supplies and brushed DC motor H-bridge drivers.

For engineers reviewing the IRLU3705ZPBF datasheet, IRLU3705ZPBF pinout, IRLU3705ZPBF application, or IRLU3705ZPBF equivalent, key selection criteria include gate threshold voltage (1.0–3.0V), low RDS(on) at 4.5V (11mΩ typ), fast switching (tr = 150ns, tf = 70ns), body diode recovery (trr = 21–42ns), and thermal resistance (RθJC = 1.14°C/W).

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per unit area while maintaining robust avalanche ruggedness. Its logic-level gate drive enables direct interfacing with 3.3V/5V microcontrollers without level-shifting, and its integral body diode supports synchronous rectification and freewheeling in half-bridge topologies.

The device features a 175°C maximum junction temperature, 66nC total gate charge (Qg), and 230pF reverse transfer capacitance (Crss)-parameters critical for minimizing switching losses and optimizing gate driver sizing in high-frequency (>100kHz) SMPS designs.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 55V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in 48V systems.
RDS(on) @ VGS = 10V 6.5–8.0mΩ - Determines conduction loss at full load; yields ≤14W dissipation at 42A.
ID @ TC = 25°C 42A - Continuous current rating under ideal heatsinking; derates to 25A at 100°C case temp.
Qg 44–66nC - Total gate charge defining driver strength requirement; impacts switching speed and EMI.
tr/tf 150ns/70ns - Rise/fall times at VDD = 28V, RG = 4.2Ω; constrains minimum PWM period.
TJ max 175°C - Enables operation in sealed enclosures or high ambient environments without forced cooling.
EAS 89mJ - Single-pulse avalanche energy; allows safe unclamped inductive turn-off in relay/motor drives.

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal enhancement; 3-pin configuration optimized for high-current PCB layout.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source) Source terminal (S) Reference node for gate drive; connects to power ground or low-side switch return path.
Pin 2 (Gate) Control input (G) High-impedance MOSFET gate requiring <66nC charge; sensitive to ESD and ringing.
Pin 3 (Drain) Power output (D) Exposed copper pad on bottom surface; must be soldered to large copper pour for thermal management.

Key Features

Feature Design Value
Logic-level gate threshold VGS(th) = 1.0–3.0V - Enables direct drive from 3.3V MCU GPIOs without external level shifters.
Ultra-low RDS(on) 8.0mΩ @ 10V - Reduces I²R losses by >30% vs. standard 55V MOSFETs in 24–48V battery systems.
Repetitive avalanche rated EAR = 360mJ @ Tj = 25°C - Supports reliable operation during inductive load commutation without snubbers.
Fast body diode trr = 21–42ns, Qrr = 14–28nC - Minimizes reverse recovery loss in synchronous buck and half-bridge converters.
Lead-free construction RoHS-compliant, halogen-free packaging - Meets IPC-J-STD-020 reflow profile requirements for Pb-free assembly.

Applications

Industrial Motor Control DC-DC Converter Primary Switch

Use Scenario: Brushed DC motor H-bridge driver in automated conveyor systems operating at 24–48V bus.

IC Role / Device Role / Timing Role: Low-side and high-side switching element; handles bidirectional 30A peak current with <1µs dead-time control.

Use Value: 8.0mΩ RDS(on) reduces heat sink size by 40% vs. legacy 12mΩ parts; 175°C rating avoids thermal shutdown during intermittent overloads.

Use Scenario: Primary-side switch in isolated 48V-to-12V flyback converter for telecom power distribution.

IC Role / Device Role / Timing Role: High-frequency (200kHz) hard-switched power transistor; withstands 1.3×VDSS avalanche during primary leakage inductance discharge.

Use Value: 66nC Qg enables use of low-cost 1A gate drivers; 230pF Crss limits Miller-induced shoot-through risk in transformer-coupled gate drive.

Automotive Body Control Module LED Driver for High-Bay Lighting

Use Scenario: Load switch for HVAC blower motor and window lift actuators in 12V vehicle architectures.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated current sensing; operates under cold-crank (6V) and load-dump (40V) conditions.

Use Value: 1.0V VGS(th) ensures turn-on at 6V supply; 42A rating supports 500W peak loads; 175°C rating survives under-dash ambient up to 105°C.

Use Scenario: Constant-current switch in 100W LED driver for warehouse high-bay fixtures with 36–48V string voltage.

IC Role / Device Role / Timing Role: PWM-controlled series pass element in buck-derived topology; conducts 3.5A continuous with 100kHz dimming frequency.

Use Value: 11mΩ RDS(on) @ 4.5V enables >95% efficiency at full load; fast tf = 70ns minimizes PWM jitter and color shift during dimming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP36NF06L RDS(on) = 12mΩ @ 10V; Qg = 45nC; VDSS = 60V; TO-220 package Higher conduction loss; requires larger heatsink; not logic-level at 3.3V (VGS(th) = 2–4V) Prefer when higher voltage margin (60V) is required and board space allows TO-220 mounting.
IRLR3705ZPbF Identical die; D-Pak package with leaded terminations; same RDS(on), Qg, and avalanche rating No RoHS compliance; incompatible with Pb-free reflow profiles; identical electrical performance Select only for legacy Pb-based assembly lines where lead-free exemption applies.

Compared with STP36NF06L, IRLU3705ZPBF offers lower RDS(on) and true logic-level drive, enabling smaller thermal solution and simpler gate drive. Against IRLR3705ZPbF, it provides RoHS compliance and Pb-free reflow compatibility without sacrificing performance.

Availability

IRLU3705ZPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter primary switching, and automotive body electronics requiring stable component supply across multi-year production cycles.

Supply support for IRLU3705ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's HEXFET® logic-level power MOSFET product line, engineered for high-current, low-voltage switching in space-constrained and thermally demanding applications such as motor drives and server power supplies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLU3705ZPBF supports 25A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and assumes adequate PCB copper area for heat spreading. At TC = 25°C, the rating is 42A.

Does this MOSFET require a gate resistor for stability?

Yes-a gate resistor (typically 4.2Ω to 10Ω) is recommended to dampen gate-source ringing caused by parasitic inductance and the 66nC gate charge. The datasheet's switching time test circuit (Fig. 18a) uses RG = 4.2Ω; omitting it risks oscillation, shoot-through, or gate oxide stress during fast edge transitions.

Can the body diode handle continuous reverse recovery current in synchronous rectification?

The body diode is rated for 42A continuous source current (IS) and 360A pulsed (ISM), with trr = 21–42ns and Qrr = 14–28nC. It is suitable for synchronous rectification in buck converters up to ~200kHz, but thermal design must account for VSD = 1.3V forward drop and associated conduction loss.

Is the IRLU3705ZPBF suitable for avalanche-prone inductive loads?

Yes-the device is explicitly rated for repetitive avalanche energy (EAR = 360mJ at Tj = 25°C) and single-pulse avalanche (EAS = 89mJ). Safe operation requires limiting junction temperature to ≤175°C using transient thermal impedance curves (Fig. 11) and ensuring avalanche pulse duration and duty cycle stay within Figure 15/16 boundaries.

IRLU3705ZPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
8mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
66 nC @ 5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
2900 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
130W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK (TO-251AA)

IRLU3705ZPBF FAQ

1.How can I place an order for IRLU3705ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU3705ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU3705ZPBF reliable?

The price and inventory of IRLU3705ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU3705ZPBF is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU3705ZPBF transactions.

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IRLU3705ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU3705ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU3705ZPBF?

For technical support, including IRLU3705ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU3705ZPBF requirements.

6.How does Aetrix verify that IRLU3705ZPBF is sourced from the original manufacturer or authorized distributors?

All IRLU3705ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU3705ZPBF meets industry standards.

7.What is the process for return or replacement of IRLU3705ZPBF?

All IRLU3705ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLU3705ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU3705ZPBF part is unused and in its original packaging.

Return procedure for IRLU3705ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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