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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU3714

Name: IRLU3714
Brand: Infineon Technologies
SKU: IRLU3714
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLU3714

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU3714.pdf

Description:: MOSFET N-CH 20V 36A I-PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLU3714 from Infineon Technologies is a logic-level N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for 20 V V_DS, 20 mΩ R_DS(on) at V_GS = 4.5 V, and 36 A continuous drain current at T_C = 25°C. It delivers ultra-low gate charge (Q_g = 9.7 nC max), fast switching (t_r = 78 ns, t_f = 4.5 ns), and robust avalanche capability (E_AS = 72 mJ), targeting synchronous rectification in high-frequency isolated DC-DC converters for telecom power systems.

For engineers reviewing the IRLU3714 datasheet, IRLU3714 pinout, IRLU3714 application, or IRLU3714 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 20 mΩ on-resistance at low V_GS, body diode reverse recovery performance (t_rr = 53 ns max at 125°C), thermal resistance (R_θJC = 3.2 °C/W), and D-Pak mechanical footprint for PCB-mount thermal management.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted channel geometry to achieve low R_DS(on) while maintaining high dV/dt immunity and controlled gate charge distribution. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic drivers.

The device integrates a fully characterized intrinsic body diode with low forward voltage (V_SD = 0.88 V typ at 18 A, 125°C) and tightly specified reverse recovery parameters (Q_rr = 53 nC max, di/dt = 100 A/µs), enabling stable operation in hard-switched synchronous buck and flyback topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Supports input rails up to 16 V DC with 20% margin for transient spikes in telecom intermediate bus applications.
R_DS(on) @ V_GS = 4.5 V	20 mΩ max - Enables <1 W conduction loss at 7 A RMS in 48 V→12 V buck stages, critical for high-efficiency processor VRMs.
Q_g	9.7 nC max - Reduces gate driver power demand and enables >1 MHz switching in digitally controlled SMPS designs.
t_r/t_f	78 ns / 4.5 ns - Minimizes overlap loss during hard switching; supports ZVS-assisted topologies with tight dead-time control.
E_AS	72 mJ - Withstands unclamped inductive energy in 12 V output rails with ≤10 µH leakage inductance without failure.
R_θJC	3.2 °C/W - Allows 33 W power dissipation at T_C = 70°C with minimal heatsinking, suitable for compact board-mounted converters.
V_GS(th)	1.0–3.0 V - Guarantees full enhancement under worst-case 3.3 V I/O rail droop, eliminating need for level-shifting gate drivers.

Pinout & Package

D-Pak (TO-252AA) package with exposed drain pad for enhanced thermal conduction and surface-mount compatibility. Thermal pad must be soldered to copper pour for rated power handling.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Accepts logic-level voltage (≥2.5 V) to fully enhance channel; low C_iss (670 pF) minimizes driver loading.
2 (Drain)	High-side switch node	Internally connected to exposed metal tab; requires direct thermal connection to PCB ground plane for heat removal.
3 (Source)	Reference node / return path	Serves as local ground reference for gate drive loop; low-inductance routing essential to suppress ringing.
4 (Drain)	Secondary drain connection	Parallel path to Pin 2; both pins must be routed to same net to maintain current sharing and thermal balance.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V, compatible with microcontroller GPIO and dedicated PWM controllers without external level shifters.
Ultra-low R_DS(on) at low V_GS	20 mΩ at 4.5 V enables high-current synchronous rectification in 5 V and 12 V output rails with <0.5 V dropout.
Fast, soft-recovery body diode	Q_rr = 53 nC and t_rr = 53 ns at 125°C reduce switching loss and EMI in discontinuous conduction mode (DCM) operation.
Robust avalanche rating	72 mJ single-pulse E_AS allows safe operation under load dump or short-circuit conditions in industrial DC-DC modules.
Thermally optimized D-Pak	3.2 °C/W junction-to-case resistance enables 33 W continuous dissipation at 70°C case temperature with standard 2 oz copper PCB layout.

Applications

Telecom Isolated DC-DC Converters

Computer Processor VRMs

Use Scenario: 48 V input to 12 V/3.3 V isolated forward converter with synchronous rectification on secondary side.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode; switched by transformer-coupled gate drive synchronized to primary FET.

Use Value: Reduces conduction loss by >60% vs. 40 V Schottky, improving full-load efficiency from 89% to 93% at 20 A output.

Use Scenario: Multiphase buck converter supplying core voltage to x86 CPU with 3-phase interleaving and 500 kHz switching.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power stage FET operating in continuous conduction mode (CCM) with 4.5 V gate drive from integrated controller.

Use Value: Enables <1.2 mΩ per phase effective on-resistance via paralleling, limiting temperature rise to <45°C at 60 A peak.

Industrial 24 V Input Buck Regulators

LED Driver Constant-Current Stages

Use Scenario: 24 V to 5 V step-down regulator powering PLC I/O modules with strict thermal envelope constraints.

IC Role / Device Role / Timing Role: Main power switch in fixed-frequency buck topology; driven by external gate driver with adjustable dead time.

Use Value: Achieves 94% peak efficiency at 10 A load while maintaining T_J < 125°C on 4-layer board with no heatsink.

Use Scenario: Constant-current LED string driver with analog dimming, using MOSFET as precision current sink in feedback path.

IC Role / Device Role / Timing Role: Linear-regulator-mode pass element controlled by op-amp feedback; operates in linear region with forced gate voltage.

Use Value: Maintains ±1% current accuracy over 0–85°C ambient due to low R_DS(on) tempco (0.022 V/°C) and stable V_GS(th).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3714	Same die, D-Pak variant with different lead frame; identical R_DS(on), Q_g, and SOA; differs only in marking and minor thermal pad geometry.	Identical functional replacement; used interchangeably in same PCB footprint but requires verification of solder mask opening alignment.	Select when sourcing flexibility is needed across Infineon's D-Pak family; no electrical redesign required.
Si2302DS	20 V, 30 mΩ R_DS(on) @ 4.5 V, 3.2 A ID; smaller SOT-23 package; higher R_DS(on) and lower current rating.	Limited to <5 A loads; unsuitable for high-current synchronous rectification but viable for low-power auxiliary rails.	Choose only for space-constrained, low-current bias supplies where thermal budget permits higher conduction loss.

Compared with IRLU3714, IRLR3714 offers identical electrical performance in a mechanically distinct D-Pak variant, while Si2302DS trades current capacity and thermal capability for ultra-compact packaging-making it relevant only for sub-5 A auxiliary functions, not main power stages.

Availability

IRLU3714 is available at Aetrix Electronics and suitable for high-frequency isolated DC-DC converters, computer processor VRMs, and industrial 24 V input buck regulators requiring stable component supply and long-term production support.

Supply support for IRLU3714 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

The HEXFET® Power MOSFET product line targets high-efficiency switching power conversion, emphasizing low gate charge, fast switching, and rugged avalanche performance for telecom, computing, and industrial SMPS applications.

FAQ

What is the maximum continuous drain current for IRLU3714 at 70°C case temperature?

The maximum continuous drain current is 31 A at T_C = 70°C with V_GS = 10 V, derated linearly beyond that point using 0.31 W/°C thermal resistance. This value assumes adequate PCB copper area for heat spreading and no airflow limitation.

Does IRLU3714 require a gate resistor for stability in high-speed switching?

Yes-a 1.8 Ω gate resistor is specified in the datasheet for switching time characterization and helps dampen parasitic oscillation caused by PCB trace inductance and MOSFET input capacitance. Omitting it may cause ringing and increased EMI in >500 kHz applications.

Can IRLU3714 be used in linear regulation mode for constant-current LED drivers?

Yes-the device supports linear operation with guaranteed safe operating area up to 100 V·A at T_J = 25°C, and its low R_DS(on) tempco (0.022 V/°C) ensures stable current regulation across temperature. Derating is required above 25°C case temperature per SOA curves.

What is the reverse recovery charge (Q_rr) of the body diode at 125°C?

The reverse recovery charge is 53 nC maximum at T_J = 125°C, measured with I_F = 18 A, V_R = 10 V, and di/dt = 100 A/µs. This value is critical for estimating commutation loss in synchronous rectifier applications operating at elevated ambient temperatures.

IRLU3714 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.7 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 670 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

IRLU3714 FAQ

1.How can I place an order for IRLU3714 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU3714 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU3714 reliable?

The price and inventory of IRLU3714 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU3714 is usually 5 days.

3.What payment methods are accepted for IRLU3714?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU3714 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU3714?

IRLU3714 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU3714 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU3714?

For technical support, including IRLU3714 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU3714 requirements.

6.How does Aetrix verify that IRLU3714 is sourced from the original manufacturer or authorized distributors?

All IRLU3714 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU3714 meets industry standards.

7.What is the process for return or replacement of IRLU3714?

All IRLU3714 units undergo pre-shipment inspection (PSI). If there is an issue with IRLU3714, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU3714 part is unused and in its original packaging.

Return procedure for IRLU3714:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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