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Infineon Technologies IRLU3714ZPBF

Part No.:
IRLU3714ZPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIRLU3714ZPBF.pdf
Description:
MOSFET N-CH 20V 37A I-PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,788

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Product details

Overview

IRLU3714ZPBF from Infineon Technologies is a 20 V, 37 A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, featuring 12 mΩ RDS(on) at VGS = 4.5 V, 4.7 nC total gate charge, and fully characterized avalanche capability. It serves as a high-efficiency synchronous rectifier or control FET in high-frequency DC/DC converters for computing and telecom power supplies.

For engineers reviewing the IRLU3714ZPBF datasheet, IRLU3714ZPBF pinout, IRLU3714ZPBF application, or IRLU3714ZPBF equivalent, key selection criteria include low 4.5 V drive capability, ultra-low gate impedance, robust unclamped inductive switching performance, and thermal resistance of 4.28 °C/W junction-to-case - critical for compact, high-density buck converter designs.

Technical Context

This MOSFET employs planar silicon process technology optimized for low-voltage, high-current switching with minimized gate-drain charge (Qgd = 1.7 nC) and reverse transfer capacitance (Crss = 95 pF), reducing Cdv/dt turn-on risk in synchronous topologies. Its body diode exhibits 8.5–13 nC Qrr and 21–32 ns trr, enabling efficient hard-switched operation without external Schottky supplementation.

The device is fully specified across temperature for gate threshold voltage (VGS(th) = 1.65–2.55 V, tempco −5.2 mV/°C), on-resistance (RDS(on) = 12–25 mΩ at 25–175°C), and avalanche energy (EAS = 100 mJ at TJ = 25°C), supporting reliable operation in thermally demanding industrial and computing environments.

Key Specifications

ParameterValue and Actual Design Meaning
VDS20 V - supports input rails up to 16 V in synchronous buck stages with margin for transient overshoot
RDS(on) @ 4.5 V12 mΩ typ - enables ≥95% efficiency at 12 A load with minimal conduction loss in 5 V/3.3 V output rails
Qg4.7 nC - reduces gate drive power and allows use with low-current PWM controllers (e.g., ISL6208, MP2315)
Qgd/Qgs1 ratio≈1.0 - limits Cdv/dt susceptibility during high dV/dt node transitions in synchronous rectifier position
RθJC4.28 °C/W - permits >30 W continuous dissipation with modest heatsinking on PCB copper pour
EAS100 mJ - sustains single-pulse inductive energy without failure in unclamped flyback or buck-boost configurations

Pinout & Package

IRLU3714ZPBF uses the surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is lead-free and RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal (S)Low-side reference node; connects directly to power ground plane; carries full load current (37 A continuous)
Pin 2 (Gate)Control input (G)High-impedance MOS gate; requires <1 µA bias; driven by dedicated gate driver or controller output
Pin 3 (Drain)Power output (D)Exposed copper pad on bottom surface; electrically and thermally connected to drain; must be soldered to large copper area

Key Features

FeatureDesign Value
Ultra-low RDS(on) at 4.5 V12 mΩ typical - eliminates need for gate boosting in 5 V logic-level systems, simplifying drive circuitry
Fully characterized avalanche ratingEAS = 100 mJ, IAR = 31 A - enables robust operation in non-isolated topologies without snubber networks
Low Qgd/Qgs1 ratio~1.0 - suppresses parasitic turn-on during high dV/dt switching node transitions in synchronous rectifiers
Optimized body diode recoveryQrr = 8.5–13 nC, trr = 21–32 ns - minimizes cross-conduction loss and EMI in hard-switched synchronous converters

Applications

Server VRM Synchronous RectifierLaptop CPU Core Supply

Use Scenario: High-current, high-frequency (500 kHz–1 MHz) synchronous buck converter delivering 1.0–1.3 V at up to 100 A to Intel/AMD processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: 12 mΩ RDS(on) at 4.5 V enables >3 W reduction in conduction loss vs. 30 mΩ alternatives at 60 A, directly lowering thermal load on motherboard.

Use Scenario: Compact, dual-phase buck regulator powering mobile CPU cores with tight space constraints and dynamic load steps.

IC Role / Device Role / Timing Role: Control FET in high-side switch position, driven by integrated PWM controller with 5 V gate drive.

Use Value: 4.7 nC Qg allows fast switching with minimal gate driver power consumption, preserving battery life during burst-mode operation.

Telecom DC-DC Isolated ConverterIndustrial PLC Power Module

Use Scenario: 48 V input, 12 V output isolated forward or active-clamp forward converter for base station power distribution.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier, operating at 200–500 kHz with zero-voltage switching assistance.

Use Value: Fully characterized avalanche withstand (EAS = 100 mJ) ensures reliability during transformer leakage inductance spikes without external clamping.

Use Scenario: 24 V industrial input, 5 V/3.3 V auxiliary supply with wide ambient temperature range (−40°C to +85°C).

IC Role / Device Role / Timing Role: Primary-side switch in non-isolated buck pre-regulator feeding isolated DC-DC modules.

Use Value: RDS(on) drift of only +100% from 25°C to 175°C (per Fig 4) maintains predictable loss profile across full operating range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR3714ZPBFSame die, I-Pak (TO-251) package; RθJA = 110 °C/W vs. 50 °C/W for D-PakLower power density; unsuitable for >15 W continuous dissipation without forced airSelect when through-hole assembly or higher creepage clearance required
SI2308DS-T1-GE320 V, 4.2 A, 35 mΩ @ 4.5 V, SOT-23 package; Qg = 4.5 nCRated for ≤5 A continuous; not suitable for >10 A synchronous rectificationUse only in low-current auxiliary rails or always-on bias supplies

Compared with IRLR3714ZPBF and SI2308DS-T1-GE3, IRLU3714ZPBF uniquely balances high current handling (37 A), low 4.5 V RDS(on), and D-Pak thermal performance - making it the only option among the three viable for sustained >20 A synchronous rectifier operation in space-constrained computing power stages.

Availability

IRLU3714ZPBF is available at Aetrix Electronics and suitable for server VRMs, laptop CPU core supplies, telecom isolated DC-DC converters, and industrial PLC power modules requiring stable component supply and long-term manufacturability.

Supply support for IRLU3714ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The HEXFET® Power MOSFET product line delivers optimized silicon solutions for high-efficiency, high-frequency switching in computing, telecom, and industrial power conversion - emphasizing low gate charge, rugged avalanche performance, and thermal reliability.

FAQ

Is IRLU3714ZPBF suitable for 3.3 V gate drive?

No - the device has a minimum gate threshold voltage of 1.65 V but requires ≥4.5 V to achieve rated RDS(on) of 12 mΩ. At 3.3 V, RDS(on) rises to ~25 mΩ (per Fig 3), increasing conduction loss by >100%. It is not recommended for true 3.3 V logic-level drive without gate boosting.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies 26 A continuous drain current at TC = 100°C and VGS = 10 V (page 1). Derating follows linear thermal resistance: at 100°C case, power dissipation is limited to 13 W, supporting 26 A with 15 mΩ max RDS(on) - consistent with the 26 A rating shown in Absolute Maximum Ratings.

Does IRLU3714ZPBF have integrated ESD protection?

No - the device lacks on-chip ESD protection diodes. Gate oxide is rated for ±20 V VGS maximum, and gate-source leakage is specified at ±100 nA. External gate resistors (≥10 Ω) and TVS clamps are recommended in high-noise environments per IRF application note AN-1001.

Can IRLU3714ZPBF replace IRLR3714ZPBF in existing D-Pak footprints?

Yes - IRLU3714ZPBF is the D-Pak variant of the same silicon die used in the I-Pak IRLR3714ZPBF. Both share identical electrical specifications, pinout (G-S-D), and thermal characteristics except for package form factor. No layout change is needed beyond confirming land pattern matches TO-252-3 standard.

IRLU3714ZPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7.1 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
560 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
35W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK

IRLU3714ZPBF FAQ

1.How can I place an order for IRLU3714ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU3714ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU3714ZPBF reliable?

The price and inventory of IRLU3714ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU3714ZPBF is usually 5 days.

3.What payment methods are accepted for IRLU3714ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU3714ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU3714ZPBF?

IRLU3714ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU3714ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU3714ZPBF?

For technical support, including IRLU3714ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU3714ZPBF requirements.

6.How does Aetrix verify that IRLU3714ZPBF is sourced from the original manufacturer or authorized distributors?

All IRLU3714ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU3714ZPBF meets industry standards.

7.What is the process for return or replacement of IRLU3714ZPBF?

All IRLU3714ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLU3714ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU3714ZPBF part is unused and in its original packaging.

Return procedure for IRLU3714ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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