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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU3717PBF

Name: IRLU3717PBF
Brand: Infineon Technologies
SKU: IRLU3717PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLU3717PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU3717PBF.pdf

Description:: MOSFET N-CH 20V 120A I-PAK

Quantity:: RFQ Add To RFQ list

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Inventory:4,428

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Product details

Overview

IRLU3717PBF from Infineon Technologies is a 20 V, 4.0 mΩ (max) N-channel D-Pak power MOSFET optimized for high-frequency synchronous buck converters in CPU VRM and telecom DC-DC applications. It delivers 89 A continuous drain current at T_C = 25°C, features ultra-low gate charge (21 nC typ.), and supports 4.5 V gate drive with robust avalanche capability (1500 mJ single-pulse E_AS at I_AS = 12 A).

For engineers reviewing the IRLU3717PBF datasheet, IRLU3717PBF pinout, IRLU3717PBF application, or IRLU3717PBF equivalent, key selection criteria include R_DS(on) at 4.5 V, Q_g/Q_gd ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 13–19 nC), thermal resistance (R_θJC = 1.69 °C/W), and SOA limits under pulsed inductive switching.

Technical Context

This HEXFET device uses planar vertical DMOS structure with optimized cell pitch and trench-free process to achieve low R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage (V_GS(th) = 1.55–2.45 V) and negative temperature coefficient (−6.4 mV/°C) enable stable parallel operation across temperature.

The integrated body diode exhibits fast reverse recovery (t_rr = 22–33 ns) and low forward voltage (V_SD ≤ 1.0 V at I_S = 12 A), critical for minimizing shoot-through and conduction loss in synchronous rectification topologies where the device operates as the low-side switch.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage compatible with 12 V input rails and transient overshoot margins in point-of-load converters.
R_DS(on) max @ V_GS = 4.5 V	4.0 mΩ - Enables <1 W conduction loss at 15 A RMS in high-current CPU core supplies.
Q_g typ.	21 nC - Reduces gate drive power and enables efficient operation with standard PWM controllers at >500 kHz switching frequencies.
Q_gd/Q_gs1 ratio	~1.1 - Low ratio minimizes susceptibility to C_dv/dt turn-on during high dV/dt node transitions in synchronous buck stages.
E_AS (single pulse)	1500 mJ @ I_AS = 12 A - Supports unclamped inductive switching stress without failure during startup or fault conditions.
R_θJC	1.69 °C/W - Allows direct heatsinking to PCB copper or external heatsink for thermal management in compact VRM layouts.
t_rr & Q_rr	22–33 ns / 13–19 nC - Limits reverse recovery loss and cross-conduction risk when paired with high-side control FETs.

Pinout & Package

IRLU3717PBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package provides low-inductance source and gate paths suitable for high-di/dt switching.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-impedance return path for load current; tied to power ground plane; connects to internal source metallization and body diode cathode.
Pin 2 (Gate)	Control terminal (G)	High-impedance input controlling channel conduction; requires low-ESR gate resistor to suppress ringing and limit peak current during switching.
Pin 3 (Drain)	Power output terminal (D)	Connected to exposed copper pad on bottom of package; carries full load current and serves as heat transfer interface to PCB thermal pad.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	3.4 mΩ typ. - Enables high-efficiency operation directly from 5 V or 3.3 V gate drivers without level-shifting.
Fully characterized avalanche rating	1500 mJ E_AS - Guarantees ruggedness against inductive energy spikes during hard-switching or fault events.
Optimized Q_gd/Q_gs1 ratio	~1.1 - Reduces risk of false turn-on caused by Miller coupling during high dV/dt transitions at the switching node.
Fast body diode recovery	t_rr = 22 ns typ., Q_rr = 13 nC - Minimizes reverse recovery loss and prevents overlap conduction in synchronous rectifier mode.

Applications

Server CPU Voltage Regulator Modules

Telecom Isolated DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V to modern x86 and ARM processors in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300–1000 kHz with tight dead-time control.

Use Value: 4.0 mΩ R_DS(on) at 4.5 V reduces conduction loss by >30% vs. legacy 6–8 mΩ devices, improving full-load efficiency by 0.8–1.2%.

Use Scenario: Secondary-side synchronous rectification in 48 V–12 V isolated flyback or forward converters for telecom base station power supplies.

IC Role / Device Role / Timing Role: Self-driven or controller-synchronized low-side switch replacing Schottky diodes in high-density AC/DC front-ends.

Use Value: 21 nC Q_g and 1.69 °C/W R_θJC allow reliable 500 kHz operation with minimal gate drive loss and junction temperature rise under 80 A peak loads.

Industrial PLC Power Management

Automotive ADAS Domain Controllers

Use Scenario: Compact, fanless 24 V–5 V intermediate bus converter powering I/O modules and fieldbus interfaces in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary low-side switch in non-isolated buck stage delivering up to 20 A continuous output with high thermal margin.

Use Value: −6.4 mV/°C V_GS(th) tempco ensures stable current sharing in paralleled configurations across −40°C to +125°C ambient.

Use Scenario: Core power delivery for radar and camera domain controllers requiring ASIL-B compliant power stages with high reliability.

IC Role / Device Role / Timing Role: Synchronous rectifier in 12 V–3.3 V/1.8 V dual-output buck converters supporting real-time SoC operation.

Use Value: 1500 mJ E_AS and 175°C T_J(max) provide margin against load dump transients and extended thermal cycling in automotive under-hood environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3717PbF	Same die, I-Pak (TO-251) package; R_θJA = 50 °C/W (PCB mount) vs. 110 °C/W for D-Pak; identical R_DS(on), Q_g, and SOA.	Preferred for through-hole prototyping or legacy board designs with I-Pak footprint; lower thermal resistance to ambient than D-Pak in non-heatsinked setups.	Select when mechanical mounting constraints favor leaded package or when higher R_θJA is acceptable for lower-power derating.
SI7850DP-T1-GE3	20 V, 3.3 mΩ R_DS(on) @ 4.5 V, but Q_g = 28 nC and Q_gd = 10.5 nC; different gate charge profile increases C_dv/dt sensitivity.	Better conduction loss at light load, but higher switching loss and greater risk of spurious turn-on in high-dV/dt nodes.	Choose only if R_DS(on) dominates system loss budget and gate drive strength permits higher Q_g.

Compared with IRLU3717PBF, IRLR3717PbF offers identical electrical performance in a through-hole package with better natural convection cooling, while SI7850DP-T1-GE3 trades lower R_DS(on) for higher Q_g and reduced C_dv/dt immunity-making IRLU3717PBF optimal for high-frequency, high-reliability synchronous rectification where gate drive efficiency and noise immunity are critical.

Availability

IRLU3717PBF is available at Aetrix Electronics and suitable for server CPU VRMs, telecom DC-DC converters, and industrial PLC power supplies requiring stable component supply and long-term production continuity.

Supply support for IRLU3717PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

The IRLU series targets high-efficiency, high-frequency power conversion systems; these D-Pak MOSFETs were engineered specifically for synchronous rectification in point-of-load and isolated DC-DC applications demanding low gate charge and robust avalanche performance.

FAQ

Is IRLU3717PBF RoHS-compliant and lead-free?

Yes, IRLU3717PBF is RoHS-compliant and fully lead-free per JEDEC J-STD-609 Category 1. The "PbF" suffix denotes lead-free termination and packaging. It meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30°C/60% RH.

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum V_GS rating is ±20 V, but Infineon specifies 10 V as the nominal gate drive for full R_DS(on) characterization. For 4.5 V logic-level drive, operation is guaranteed down to V_GS = 4.5 V with R_DS(on) ≤ 4.0 mΩ; exceeding 15 V risks accelerated gate oxide degradation over lifetime.

Can IRLU3717PBF be paralleled for higher current handling?

Yes-its negative V_GS(th) temperature coefficient (−6.4 mV/°C) promotes inherent current sharing. Parallel operation requires matched layout (symmetrical gate and source routing), individual gate resistors (≤5 Ω), and thermal coupling via shared copper area to ensure uniform junction temperature rise across devices.

Does the body diode support continuous bidirectional current in half-bridge configurations?

No-the body diode is rated for continuous source current (I_S) up to 120 A at T_C = 25°C, but it is not designed for sustained reverse conduction. In half-bridge use, it functions only as a freewheeling path during dead time; sustained reverse bias must be avoided to prevent thermal runaway or latch-up.

IRLU3717PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2830 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 89W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

IRLU3717PBF FAQ

1.How can I place an order for IRLU3717PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU3717PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU3717PBF reliable?

The price and inventory of IRLU3717PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU3717PBF is usually 5 days.

3.What payment methods are accepted for IRLU3717PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU3717PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU3717PBF?

IRLU3717PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU3717PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU3717PBF?

For technical support, including IRLU3717PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU3717PBF requirements.

6.How does Aetrix verify that IRLU3717PBF is sourced from the original manufacturer or authorized distributors?

All IRLU3717PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU3717PBF meets industry standards.

7.What is the process for return or replacement of IRLU3717PBF?

All IRLU3717PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLU3717PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU3717PBF part is unused and in its original packaging.

Return procedure for IRLU3717PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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