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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU7807ZPBF

Name: IRLU7807ZPBF
Brand: Infineon Technologies
SKU: IRLU7807ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLU7807ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU7807ZPBF.pdf

Description:: MOSFET N-CH 30V 43A I-PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLU7807ZPBF from Infineon Technologies is a 30V N-channel D-Pak power MOSFET optimized for high-frequency synchronous buck converters in CPU core voltage regulation. It delivers 13.8 mΩ R_DS(on) at V_GS = 4.5 V, 7.0 nC total gate charge, and 170 A pulsed drain current, enabling efficient low-voltage, high-current power delivery in server and desktop VRMs.

For engineers reviewing the IRLU7807ZPBF datasheet, IRLU7807ZPBF pinout, IRLU7807ZPBF application, or IRLU7807ZPBF equivalent, key selection criteria include its ultra-low gate impedance, fully characterized avalanche capability (120 mJ E_AS), and body diode reverse recovery performance (Q_rr = 14–21 nC, t_rr = 23–35 ns) under hard-switching conditions.

Technical Context

This HEXFET device uses planar vertical DMOS technology with an integrated body diode, supporting unclamped inductive switching and synchronous rectification. Its gate threshold voltage (1.35–2.25 V) and negative temperature coefficient of V_GS(th) (−4.5 mV/°C) enable stable parallel operation and thermal runaway mitigation.

The MOSFET is characterized for linear-mode operation up to 100°C case temperature and features a junction-to-case thermal resistance of 3.75°C/W. Its C_iss/C_oss/C_rss values (780/180/100 pF at V_DS = 15 V) support precise gate drive design for <100 kHz to 1 MHz DC/DC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient overvoltage margins in point-of-load converters.
R_DS(on) max @ 4.5 V	13.8 mΩ - Enables ≤1.5 W conduction loss at 12 A DC, critical for thermally constrained VRM layouts.
Q_g typ.	7.0 nC - Low gate charge reduces driver power loss and enables fast turn-on (<7.1 ns delay) with standard gate drivers.
I_D @ T_C = 100°C	30 A - Sustains continuous current in compact heatsinkless designs with PCB copper thermal spreading.
E_AS	120 mJ - Rated single-pulse avalanche energy ensures robustness against inductive switching faults without external snubbers.
Q_rr	14–21 nC - Quantified reverse recovery charge directly impacts shoot-through risk and losses in synchronous FET position.
R_θJC	3.75°C/W - Confirmed junction-to-case thermal path supports direct heatsink mounting for >60 W dissipation.

Pinout & Package

IRLU7807ZPBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package supports reflow soldering per JEDEC J-STD-020 and has a 1.6 mm lead-free soldering tolerance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground plane or output capacitor negative; carries full load current.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate requiring <7 nC charge; sensitive to dv/dt-induced turn-on due to Q_gd/Q_gs1 ratio.
Pin 3 (Drain)	Power output (D)	Exposed copper pad on bottom surface; electrically and thermally connected to drain; must be routed to high-current input trace and heatsink.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	13.8 mΩ enables use with 5 V logic-level gate drivers in space-constrained VRMs without efficiency penalty.
Fully characterized avalanche	120 mJ E_AS at T_J = 25°C verified per JEDEC JESD24-11, eliminating need for external clamping in synchronous buck phase nodes.
Optimized body diode	Q_rr = 14–21 nC and t_rr = 23–35 ns reduce cross-conduction losses and EMI during dead-time transitions.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1); suitable for industrial and computing applications with strict environmental compliance.

Applications

Server CPU Voltage Regulator

Desktop GPU Power Stage

Use Scenario: High-current, multi-phase buck converter delivering 1.0–1.3 V at up to 200 A to modern X86 processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300–600 kHz with tight dead-time control.

Use Value: 13.8 mΩ R_DS(on) at 4.5 V minimizes conduction loss in the 12–15 A per-phase range, improving full-load efficiency by ≥0.8% versus 20 mΩ alternatives.

Use Scenario: Dual-phase 0.9–1.2 V VRM powering discrete graphics processing units in gaming PCs.

IC Role / Device Role / Timing Role: Control FET in high-side position with fast switching and low Q_g to reduce driver loading and propagation delay.

Use Value: 7.0 nC Q_g allows clean 10 ns rise/fall edges using TC4427 drivers, reducing overlap loss and thermal stress during 500 kHz operation.

Industrial PLC I/O Module

Telecom Baseband Power Supply

Use Scenario: 24 V input, 3.3 V/5 V isolated DC/DC converter supplying programmable logic controller digital I/O banks.

IC Role / Device Role / Timing Role: Primary switch in active-clamp forward or synchronous flyback topology handling 5–10 A loads.

Use Value: 30 V V_DS rating provides 2× margin over 24 V nominal rail, while 170 A I_DM supports surge immunity during hot-swap events.

Use Scenario: Point-of-load regulator converting −48 V telecom supply to 1.8 V for FPGA and ASIC baseband processors.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in half-bridge LLC resonant converter.

Use Value: Fully characterized avalanche performance (120 mJ) ensures reliability during line transients and soft-start overshoot without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR7807ZPbF	Same die, I-Pak (TO-251) package; R_θJA = 110°C/W vs. 50°C/W for D-Pak; no exposed drain pad.	Lower power density; unsuitable for >40 W continuous dissipation without forced air.	Select when through-hole assembly or legacy board layout requires I-Pak footprint.
SiR872DP-T1-GE3	30 V, 11.5 mΩ @ 4.5 V, 10.5 nC Q_g; trench MOSFET with lower Q_rr (9.5 nC) but higher gate charge.	Better reverse recovery but increased driver loss; requires gate resistor tuning for same switching speed.	Select when minimizing shoot-through dominates over gate drive power in high-frequency (>1 MHz) designs.

Compared with IRLR7807ZPbF, the IRLU7807ZPBF offers superior thermal performance via D-Pak's exposed drain pad, while SiR872DP trades lower R_DS(on) for higher Q_g, making it preferable only where Q_rr-driven shoot-through is the dominant failure mode.

Availability

IRLU7807ZPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, desktop GPU power stages, and industrial PLC I/O modules requiring stable component supply and long-term production continuity.

Supply support for IRLU7807ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IRLU7807ZPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low gate charge and robust avalanche capability are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLU7807ZPBF supports 30 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value assumes adequate PCB copper area (≥10 cm² 2 oz Cu) for thermal conduction and is derated linearly above 100°C at 0.27 W/°C.

Does this MOSFET require a gate resistor for stability in synchronous buck applications?

Yes - a 2.2–10 Ω gate resistor is recommended to dampen ringing caused by PCB trace inductance and gate-drain capacitance (C_rss). Without it, the 2.7 nC Q_gd and 100 pF C_rss can induce dv/dt-triggered turn-on during high dV/dt transitions at the switching node.

Can IRLU7807ZPBF replace IRLU7807Z in existing designs?

Yes - IRLU7807ZPBF is the lead-free, RoHS-compliant version of IRLU7807Z, with identical electrical specifications, pinout, and package dimensions. No layout or firmware changes are required; only reflow profile adjustment for Pb-free solder is needed per JEDEC J-STD-020.

What is the typical body diode forward voltage at 12 A?

The typical source-to-drain diode forward voltage (V_SD) is 0.85 V at I_SD = 12 A and T_J = 25°C, rising to ~1.0 V at T_J = 175°C. This value is measured with gate shorted to source and reflects the intrinsic silicon diode drop, not a Schottky enhancement.

IRLU7807ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 780 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

IRLU7807ZPBF FAQ

1.How can I place an order for IRLU7807ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU7807ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU7807ZPBF reliable?

The price and inventory of IRLU7807ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU7807ZPBF is usually 5 days.

3.What payment methods are accepted for IRLU7807ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU7807ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU7807ZPBF?

IRLU7807ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU7807ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU7807ZPBF?

For technical support, including IRLU7807ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU7807ZPBF requirements.

6.How does Aetrix verify that IRLU7807ZPBF is sourced from the original manufacturer or authorized distributors?

All IRLU7807ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU7807ZPBF meets industry standards.

7.What is the process for return or replacement of IRLU7807ZPBF?

All IRLU7807ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLU7807ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU7807ZPBF part is unused and in its original packaging.

Return procedure for IRLU7807ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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