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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU7833

Name: IRLU7833
Brand: Infineon Technologies
SKU: IRLU7833
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLU7833

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU7833.pdf

Description:: MOSFET N-CH 30V 140A I-PAK

Quantity:: RFQ Add To RFQ list

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Inventory:4,342

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Product details

Overview

IRLU7833 from Infineon Technologies is a 30V N-channel HEXFET Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency synchronous rectification in DC-DC converters. It delivers 4.5 mΩ R_DS(on) at V_GS = 4.5 V, 33 nC total gate charge, and 140 A pulsed drain current - enabling low conduction loss and fast switching in telecom and processor power supplies.

For engineers reviewing the IRLU7833 datasheet, IRLU7833 pinout, IRLU7833 application, or IRLU7833 equivalent, key selection criteria include its ultra-low gate impedance, fully characterized avalanche capability, body diode reverse recovery charge (Q_rr = 37–55 nC), and thermal resistance (R_θJC = 1.05 °C/W) for high-power-density board-level designs.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free process to achieve sub-5 mΩ on-resistance at 4.5 V drive while maintaining robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (1.4–2.3 V) and negative temperature coefficient (∆V_GS(th)/∆T_J = −6.0 mV/°C) support stable parallel operation.

The device integrates an intrinsic body diode with 39–58 ns reverse recovery time and 1.0 V forward voltage at 12 A, enabling efficient synchronous rectification without external Schottky diodes in isolated and non-isolated buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V in telecom and CPU VRMs without derating
R_DS(on) max @ 4.5 V	4.5 mΩ - enables <1 W conduction loss at 15 A continuous drain current
Q_g	33 nC - reduces gate drive power and allows use with low-current PWM controllers
I_D @ T_C = 25°C	140 A - sustains high peak loads in transient-heavy server power stages
R_θJC	1.05 °C/W - permits direct heatsinking to PCB copper or small metal clips for thermal management
Q_rr	37–55 nC - minimizes cross-conduction losses during dead-time in synchronous FETs
E_AS	530 mJ - withstands single-pulse inductive energy in hard-switched converter faults

Pinout & Package

IRLU7833 uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or output rail return path
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate requiring <33 nC charge for full enhancement
Pin 3 (Drain)	Power output (D)	Exposed copper pad - electrically and thermally tied to drain; must be soldered to large copper pour

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	Enables direct drive from 3.3 V or 5 V logic-level controllers without level-shifting
Fully characterized avalanche rating	Guarantees 530 mJ single-pulse energy handling under unclamped inductive load conditions
Low Q_gd/Q_gs1 ratio	Reduces susceptibility to C_dv/dt turn-on during high dV/dt switching node transitions
Optimized body diode recovery	39–58 ns t_rr and 37–55 nC Q_rr minimize shoot-through risk in synchronous buck configurations

Applications

Server CPU Voltage Regulator

Telecom Isolated DC-DC Converter

Use Scenario: High-current, multi-phase VRM supplying Intel/AMD processors with dynamic load steps up to 200 A/µs.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in low-side position of buck converter phase leg.

Use Value: 4.5 mΩ R_DS(on) at 4.5 V ensures <0.7 W conduction loss at 12 A, reducing thermal stress on dense PCB layouts.

Use Scenario: Secondary-side synchronous rectification in 48 V input telecom PSUs delivering 12 V/60 A output.

IC Role / Device Role / Timing Role: Output rectifier replacing Schottky diode in forward or LLC resonant converter secondary.

Use Value: 33 nC Q_g and low Q_oss (22 nC) enable >95% efficiency at 300 kHz switching frequency.

Industrial Motor Drive Inverter

Automotive ADAS Power Supply

Use Scenario: Half-bridge driver stage in 24 V BLDC motor control with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current through integrated body diode during freewheeling.

Use Value: 560 A pulsed source current (I_SM) and 1.0 V V_SD support high-efficiency regeneration without external diode.

Use Scenario: Compact 5 V/3 A auxiliary supply in radar or camera ECU with strict thermal envelope.

IC Role / Device Role / Timing Role: Primary-side switch in flyback controller with integrated primary sensing.

Use Value: R_θJC = 1.05 °C/W allows direct mounting to aluminum housing, eliminating need for external heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR7833	Same die, I-Pak (TO-251) package; higher R_θJA (110 °C/W vs. 50 °C/W)	Better suited for leaded through-hole prototyping or lower-power designs with less thermal constraint	Select when manual assembly or legacy footprint compatibility is required over thermal performance
SiR872DP	30 V, 3.0 mΩ @ 4.5 V, 42 nC Q_g, PowerPAK SO-8 package	Higher gate charge increases drive loss but smaller footprint enables ultra-dense VRM layouts	Prefer when board area is critical and gate driver can support higher Q_g

Compared with IRLU7833, IRLR7833 trades thermal performance for mechanical robustness in through-hole assembly, while SiR872DP offers lower R_DS(on) in a smaller package at the cost of increased gate drive demand - making IRLU7833 optimal for thermally constrained, high-current surface-mount synchronous rectification.

Availability

IRLU7833 is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom isolated DC-DC converters, and industrial motor drive inverters requiring stable component supply across extended production lifecycles.

Supply support for IRLU7833 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRLU7833 belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current for IRLU7833 at 100°C case temperature?

The maximum continuous drain current (I_D) at T_C = 100°C is 80 A, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation at elevated case temperatures and assumes proper PCB copper area and airflow per the datasheet layout guidelines.

Does IRLU7833 have avalanche capability, and is it rated for repetitive operation?

IRLU7833 is fully characterized for single-pulse avalanche energy (E_AS = 530 mJ), but the datasheet does not specify repetitive avalanche rating. Designers must implement external clamping or snubbing circuits if repetitive inductive switching is expected, as sustained UIS events may exceed safe operating area limits.

Can IRLU7833 be used in parallel configurations, and what precautions are needed?

Yes - its negative V_GS(th) temperature coefficient (−6.0 mV/°C) promotes current sharing. However, ensure matched gate drive loop inductance, symmetrical PCB layout, and individual gate resistors (≥10 Ω) to suppress oscillation and prevent unequal dynamic current distribution during switching transitions.

What is the recommended minimum gate drive voltage to ensure full enhancement?

A minimum gate-to-source voltage of 4.5 V is required to achieve the specified 4.5 mΩ R_DS(on). While the device begins conducting at V_GS(th) ≈ 1.4–2.3 V, operation below 4.5 V results in significantly higher on-resistance and conduction loss - thus 4.5 V or higher is mandatory for rated performance in power conversion applications.

IRLU7833 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4010 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

IRLU7833 FAQ

1.How can I place an order for IRLU7833 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU7833 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU7833 reliable?

The price and inventory of IRLU7833 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU7833 is usually 5 days.

3.What payment methods are accepted for IRLU7833?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU7833 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU7833?

IRLU7833 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU7833 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU7833?

For technical support, including IRLU7833 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU7833 requirements.

6.How does Aetrix verify that IRLU7833 is sourced from the original manufacturer or authorized distributors?

All IRLU7833 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU7833 meets industry standards.

7.What is the process for return or replacement of IRLU7833?

All IRLU7833 units undergo pre-shipment inspection (PSI). If there is an issue with IRLU7833, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU7833 part is unused and in its original packaging.

Return procedure for IRLU7833:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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