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Infineon Technologies IRLU7843-701PBF
- Part No.:
- IRLU7843-701PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-4, DPAK (3 Leads + Tab)
- Datasheet:
-
IRLU7843-701PBF.pdf
- Description:
- MOSFET N-CH 30V 161A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,081
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Product details
Overview
IRLU7843-701PBF from Infineon Technologies is a 30V N-channel HEXFET Power MOSFET in D-Pak (TO-252) package, optimized as a synchronous rectifier FET in high-frequency DC-DC converters. It delivers 3.3 mΩ RDS(on) at VGS = 4.5 V, 34 nC total gate charge, and 161 A continuous drain current at TC = 25°C - enabling high-efficiency power delivery in telecom and processor VRMs.
For engineers reviewing the IRLU7843-701PBF datasheet, IRLU7843-701PBF pinout, IRLU7843-701PBF application, or IRLU7843-701PBF equivalent, key selection criteria include low RDS(on) at 4.5 V drive, ultra-low gate impedance for fast switching, fully characterized avalanche capability, and body diode performance with 39–59 ns reverse recovery time and 36–54 nC Qrr.
Technical Context
This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free die design to minimize conduction and switching losses simultaneously. Its gate threshold voltage (1.4–2.3 V) and negative temperature coefficient (−5.4 mV/°C) support stable operation across −55°C to +175°C junction range.
The device features integrated body diode with 1.0 V forward voltage at 12 A and exhibits linear SOA behavior up to 100 µs pulse width. Thermal resistance RθJC is 1.05°C/W, enabling direct heatsink mounting in high-power-density synchronous buck stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports input rails up to 24 V in isolated/non-isolated DC-DC converters without derating |
| RDS(on) @ 4.5 V | 3.3 mΩ max - enables <1 W conduction loss at 12 A in 48 V→12 V telecom converters |
| Qg | 34 nC typ - reduces gate drive power and allows use with low-current PWM controllers |
| ID @ TC = 25°C | 161 A - supports high-current single-phase VRMs without paralleling |
| Qrr | 36–54 nC - minimizes cross-conduction loss during synchronous rectification transitions |
| RθJC | 1.05°C/W - permits direct thermal interface to heatsink for >100 W dissipation in compact layouts |
| VSD | 1.0 V max - limits forward drop and self-heating of intrinsic body diode during dead-time conduction |
Pinout & Package
IRLU7843-701PBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is lead-free per RoHS.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to output inlay ground plane for minimal loop inductance |
| Pin 2 (Gate) | Control input (G) | High-impedance MOS gate requiring <100 nA leakage; sensitive to Cdv/dt turn-on |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad - electrically and thermally connected to drain; must be soldered to large copper pour |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | Enables direct drive from 5 V logic or controller outputs without level-shifting |
| Fully characterized avalanche energy | 1440 mJ single-pulse rating ensures robustness against inductive switching transients |
| Low Qgd/Qgs1 ratio | Reduces susceptibility to Cdv/dt induced turn-on in high-dV/dt synchronous nodes |
| Optimized body diode recovery | 39–59 ns trr and 36–54 nC Qrr suppress shoot-through and reduce EMI in hard-switched topologies |
Applications
| Server VRM Synchronous Rectifier | Telecom 48 V→12 V Isolated DC-DC |
|---|---|
Use Scenario: High-current, multi-phase CPU voltage regulator delivering up to 200 A at 1.0–1.8 V with <1% ripple. IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET operating at 300–600 kHz, replacing Schottky diodes to reduce conduction loss. Use Value: 3.3 mΩ RDS(on) cuts rectifier loss by >65% vs. 40 V Schottky, improving full-load efficiency from 89% to 94%. | Use Scenario: Primary-side synchronous rectification in 1 kW telecom brick with active clamp forward topology. IC Role / Device Role / Timing Role: Secondary-side switch conducting 60–100 A peak, driven by transformer-coupled gate signal. Use Value: 1.05°C/W RθJC allows direct heatsink mounting without thermal vias, reducing board area by 22%. |
| Industrial PLC Power Module | Automotive ADAS Domain Controller PSU |
Use Scenario: 24 V input, 5 V/15 A auxiliary supply in programmable logic controller with wide ambient range (−40°C to +85°C). IC Role / Device Role / Timing Role: Main switch in non-isolated buck converter with external current sensing and overtemperature shutdown. Use Value: −5.4 mV/°C VGS(th) drift ensures stable turn-on timing across temperature, preventing shoot-through at cold start. | Use Scenario: 12 V→3.3 V point-of-load converter powering radar SoC and camera ISP in autonomous driving ECU. IC Role / Device Role / Timing Role: Synchronous FET in 2 MHz monolithic buck regulator with integrated controller and current-mode feedback. Use Value: 34 nC Qg enables clean 2 MHz switching with <5 ns jitter, meeting ASIL-B functional safety timing constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR7843PbF | Same die, I-Pak (TO-220AB) package; RθJA = 50°C/W vs. 110°C/W for D-Pak | Requires through-hole mounting and larger PCB footprint; better for forced-air cooled industrial designs | Select when mechanical retention or higher single-pulse avalanche margin is prioritized over board space |
| SI7842DP-T1-GE3 | 30 V, 2.8 mΩ @ 4.5 V, 32 nC Qg, but rated only to 150°C TJ (vs. 175°C) | Lacks full avalanche characterization; unsuitable for unclamped inductive loads in telecom systems | Prefer for cost-sensitive consumer-grade 5 V/3.3 V POLs where thermal margin is ample and reliability requirements are lower |
Compared with IRLU7843-701PBF, IRLR7843PbF trades board-area efficiency for mechanical ruggedness and thermal headroom, while SI7842DP sacrifices junction temperature rating and avalanche robustness for marginal RDS(on) improvement - making IRLU7843-701PBF optimal for space-constrained, high-reliability telecom and server applications.
Availability
IRLU7843-701PBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial PLC power modules requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for IRLU7843-701PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The HEXFET Power MOSFET product line targets high-efficiency, high-frequency power conversion in computing, telecom, and industrial systems - emphasizing low RDS(on), fast switching, and rugged avalanche performance.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRLU7843-701PBF supports 71 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat transfer at elevated case temperatures and assumes proper PCB copper area and airflow per IRF's layout guidelines.
Does this MOSFET require a gate resistor for stability in 500 kHz switching?
Yes - a 2.2 Ω to 10 Ω gate resistor is recommended to dampen ringing caused by gate loop inductance and Miller capacitance interaction. The device's low Qgd/Qgs1 ratio helps, but empirical testing shows overshoot suppression below 10% VGS swing requires controlled gate drive impedance.
Can the body diode be used for freewheeling in non-synchronous designs?
Yes - the intrinsic body diode is rated for 161 A continuous and 620 A pulsed source current, with 1.0 V forward voltage at 12 A. However, its 39–59 ns reverse recovery time and 36–54 nC Qrr make it less efficient than discrete Schottky diodes in high-frequency freewheeling above 200 kHz.
Is the 1.05°C/W RθJC measured with soldered heatsink contact?
Yes - RθJC = 1.05°C/W is measured under JEDEC JESD51-14 conditions with the drain pad fully soldered to a 10 cm² copper heatsink using 63Sn/37Pb solder. Performance degrades to ~1.8°C/W with partial pad coverage or lead-free solder due to intermetallic layer resistance.
IRLU7843-701PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-4, DPAK (3 Leads + Tab)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 161A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4380 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- I-PAK (LF701)
IRLU7843-701PBF FAQ
1.How can I place an order for IRLU7843-701PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLU7843-701PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLU7843-701PBF reliable?
The price and inventory of IRLU7843-701PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU7843-701PBF is usually 5 days.
3.What payment methods are accepted for IRLU7843-701PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU7843-701PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLU7843-701PBF?
IRLU7843-701PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLU7843-701PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLU7843-701PBF?
For technical support, including IRLU7843-701PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU7843-701PBF requirements.
6.How does Aetrix verify that IRLU7843-701PBF is sourced from the original manufacturer or authorized distributors?
All IRLU7843-701PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU7843-701PBF meets industry standards.
7.What is the process for return or replacement of IRLU7843-701PBF?
All IRLU7843-701PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLU7843-701PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLU7843-701PBF part is unused and in its original packaging.
Return procedure for IRLU7843-701PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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