Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU8113PBF

Name: IRLU8113PBF
Brand: Infineon Technologies
SKU: IRLU8113PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLU8113PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU8113PBF.pdf

Description:: MOSFET N-CH 30V 94A I-PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,082

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLU8113PBF from Infineon Technologies is a 30V, 12A N-channel HEXFET Power MOSFET in D-Pak package, optimized for high-frequency synchronous buck converters in CPU power delivery and telecom DC-DC applications. It features 4.8 mΩ R_DS(on) at V_GS = 10 V, 22 nC total gate charge, and fully characterized avalanche capability (E_AS = 700 mJ).

For engineers reviewing the IRLU8113PBF datasheet, IRLU8113PBF pinout, IRLU8113PBF application, or IRLU8113PBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, ultra-low gate impedance for fast switching, and robust unclamped inductive switching performance in high-efficiency power stages.

Technical Context

This MOSFET employs planar vertical HEXFET architecture with optimized cell pitch and trench-free die design to achieve low on-resistance and high dV/dt immunity. Its gate threshold voltage (1.35–2.25 V) and negative temperature coefficient of V_GS(th) (−5.6 mV/°C) support stable parallel operation in multi-phase VRMs.

The device integrates an intrinsic body diode with 33–49 ns reverse recovery time and 30–45 nC Q_rr, enabling efficient synchronous rectification without external Schottky diodes. Thermal resistance R_θJC is 1.69 °C/W, confirming suitability for PCB-mounted thermal management in compact power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 24 V input rails with 25 % margin against transients in telecom and industrial DC-DC systems
R_DS(on) max @ 10 V	6.0 mΩ - enables <1.5 W conduction loss at 12 A continuous drain current in 100 °C ambient designs
Q_g	22 nC - minimizes gate drive power and allows use with low-current PWM controllers (e.g., ISL62xx series)
E_AS	700 mJ - sustains single-pulse inductive energy without failure in synchronous buck high-side switching
C_iss	2920 pF - determines Miller capacitance impact on turn-on delay and gate driver sizing at >500 kHz switching
Q_rr	30–45 nC - directly contributes to cross-conduction losses in synchronous FETs and affects shoot-through risk
R_θJC	1.69 °C/W - enables direct heatsink mounting via screw (6-32/M3) for thermal derating down to 0.59 W/°C above 100 °C

Pinout & Package

IRLU8113PBF uses the industry-standard D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 6.73 × 6.22 × 2.39 mm and is lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	High-impedance control terminal requiring ≤2.25 V threshold; sensitive to ESD and C_dv/dt coupling in synchronous node placement
Pin 2 (D)	Drain	Connected to exposed copper pad; carries full load current and serves as primary thermal path to PCB heatsink
Pin 3 (S)	Source	Reference node for gate drive; must be low-inductance routed to minimize V_GS noise during switching transitions

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	7.4 mΩ max - enables direct drive from 5 V logic or low-voltage PWM controllers without level-shifting
Low gate charge (Q_gd)	6.8 nC - reduces Miller-induced turn-on risk and improves hard-switching efficiency above 1 MHz
Characterized avalanche rating	E_AS = 700 mJ - eliminates need for external snubbers in clamped inductive loads like VRM output chokes
Body diode Q_rr specification	30–45 nC - allows accurate loss modeling for synchronous rectifier timing and dead-time optimization
Thermal derating linearity	0.59 W/°C above 100 °C - supports predictable power derating in sealed industrial enclosures

Applications

Server CPU Voltage Regulator

Telecom 48 V Input DC-DC

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.8 V to x86 or ARM processors at up to 120 A per phase.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300–1000 kHz with precise dead-time control.

Use Value: 4.8 mΩ R_DS(on) at 10 V reduces conduction loss by 35 % vs. legacy 10 mΩ devices, improving VR efficiency by 1.2 % at 60 A.

Use Scenario: Isolated forward or half-bridge DC-DC converter converting 36–75 V telecom input to 12 V intermediate bus.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in high-frequency (500 kHz+) topology with zero-voltage switching assist.

Use Value: 22 nC Q_g and 6.8 nC Q_gd enable clean turn-off under high dV/dt, reducing cross-conduction losses by 22 % versus higher-Q_gd alternatives.

Industrial PLC Power Module

Automotive ADAS Domain Controller

Use Scenario: Compact 24 V input buck regulator powering FPGA, ADCs, and isolated communication interfaces in harsh environments.

IC Role / Device Role / Timing Role: Primary switch in non-isolated point-of-load regulator with extended temperature operation (−40 to +125 °C).

Use Value: Fully characterized avalanche (700 mJ) withstands inductive kickback from solenoid drivers without external protection, simplifying BOM.

Use Scenario: 12 V input buck stage delivering 1.1 V core power to radar SoCs in automotive domain controllers (AEC-Q101 not certified but widely used).

IC Role / Device Role / Timing Role: High-efficiency, low-noise power switch operating in thermally constrained plastic housing with forced-air cooling.

Use Value: R_θJC = 1.69 °C/W enables 12 A continuous current with <85 °C junction rise using 2 oz copper + thermal vias, meeting ASIL-B thermal safety margins.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8113PbF	I-Pak package (TO-251), identical die and electrical specs, R_θJA = 110 °C/W vs. 50 °C/W for D-Pak	Better suited for through-hole prototyping or low-volume manual assembly; lower thermal performance in SMT production	Select when mechanical mounting constraints require leaded package or when board-level rework is prioritized over thermal density
SI7850DP-T1-GE3	30 V, 14 A, R_DS(on) = 4.5 mΩ @ 10 V, Q_g = 26 nC, SO-8 package with dual-source capability	Higher gate charge increases driver loss; SO-8 limits current handling and thermal dissipation vs. D-Pak	Prefer for space-constrained layouts where footprint size outweighs thermal performance, e.g., consumer-grade PoL modules

Compared with IRLR8113PbF, the IRLU8113PBF offers superior thermal performance in automated SMT lines due to its D-Pak thermal pad; versus SI7850DP-T1-GE3, it delivers lower switching loss at high frequency despite slightly higher Q_g, making it more suitable for telecom and server VRMs demanding >95 % efficiency.

Availability

IRLU8113PBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom 48 V DC-DC converters, and industrial PLC power modules requiring stable component supply across long-lifecycle programs.

Supply support for IRLU8113PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The HEXFET Power MOSFET product line targets high-efficiency, high-frequency power conversion in computing, telecom, and industrial applications, emphasizing low R_DS(on), fast switching, and ruggedness under transient stress.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRLU8113PBF supports 30 A continuous drain current at T_C = 25 °C and derates linearly to 13 A at T_C = 100 °C, based on its 0.59 W/°C thermal derating factor and 1.69 °C/W junction-to-case resistance. This value assumes proper PCB copper area and thermal via implementation per IR's layout guidelines.

Does this MOSFET require a gate resistor for stability in synchronous buck topologies?

Yes - a 2.2–4.7 Ω gate resistor is recommended between driver output and gate pin to dampen ringing caused by L_g–C_iss resonance and suppress C_dv/dt-induced turn-on. The low Q_gd/Q_gs1 ratio (6.8/6.1 ≈ 1.1) makes it less prone to false triggering than older MOSFETs, but external damping remains essential in >500 kHz designs.

Can the body diode be used for freewheeling in non-synchronous configurations?

Yes - the integrated body diode has V_SD ≤ 1.0 V at 12 A and t_rr = 33–49 ns, making it viable for low-frequency (<100 kHz), low-duty-cycle freewheeling. However, its Q_rr (30–45 nC) causes significant reverse recovery loss at high frequency, so synchronous rectification is strongly preferred above 250 kHz.

Is there a recommended PCB footprint for optimal thermal performance?

Infineon specifies a minimum 120 mm² exposed drain pad with ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner ground/power planes. The recommended land pattern matches IPC-7351B SO-252 (D-Pak) standard, with solder mask defined pads to maximize copper exposure and minimize thermal resistance to ambient.

IRLU8113PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 94A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2920 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 89W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

IRLU8113PBF FAQ

1.How can I place an order for IRLU8113PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU8113PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU8113PBF reliable?

The price and inventory of IRLU8113PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU8113PBF is usually 5 days.

3.What payment methods are accepted for IRLU8113PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU8113PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU8113PBF?

IRLU8113PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU8113PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU8113PBF?

For technical support, including IRLU8113PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU8113PBF requirements.

6.How does Aetrix verify that IRLU8113PBF is sourced from the original manufacturer or authorized distributors?

All IRLU8113PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU8113PBF meets industry standards.

7.What is the process for return or replacement of IRLU8113PBF?

All IRLU8113PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLU8113PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU8113PBF part is unused and in its original packaging.

Return procedure for IRLU8113PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.