Infineon Technologies IRLU8203PBF

Overview

IRLU8203PBF from Infineon Technologies (formerly International Rectifier) is a 30V, 110A N-channel DPAK-packaged HEXFET Power MOSFET optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It features 6.8mΩ R_DS(on) at V_GS = 10V, 7.1mΩ at 4.5V, 33nC total gate charge, and 310mJ single-pulse avalanche energy - enabling efficient power conversion in telecom and processor VRMs.

For engineers reviewing the IRLU8203PBF datasheet, IRLU8203PBF pinout, IRLU8203PBF application, or IRLU8203PBF equivalent, key selection criteria include its low 4.5V-threshold R_DS(on), fast 99ns rise/69ns fall times, 1.09°C/W junction-to-case thermal resistance, and robust 30A unclamped inductive avalanche rating under 125°C operation.

Technical Context

This MOSFET employs planar HEXFET technology with optimized cell pitch and trench-free structure to achieve ultra-low on-resistance while maintaining rugged avalanche performance. Its gate threshold voltage (1.0–3.0V) and transconductance (35S typical) support direct logic-level drive from 3.3V/5V controllers without level-shifting.

The device integrates a fast-recovery body diode with 48–74ns reverse recovery time and 62–100nC Q_rr, minimizing switching losses during synchronous rectification. Thermal design is enabled by its DPAK package's 1.09°C/W R_θJC, allowing high-current operation up to 76A at T_C = 100°C.

Key Specifications

Pinout & Package

IRLU8203PBF uses the industry-standard DPAK (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 6.73 × 6.22 × 2.39 mm and supports reflow soldering per IPC-J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLR8203PbF and STP80NF55-08, IRLU8203PBF delivers optimal balance of low R_DS(on), fast switching, and surface-mount thermal performance - making it preferred for space-constrained, high-efficiency, high-frequency power stages where DPAK footprint and 1.09°C/W R_θJC are critical.

Availability

IRLU8203PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server CPU voltage regulators, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRLU8203PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET product line with full documentation and reliability testing.

The IRLU8203PBF belongs to the HEXFET Power MOSFET family, designed specifically for high-efficiency, high-frequency switching applications in power supplies, motor controls, and DC-DC conversion where low R_DS(on) and fast switching are essential.

FAQ

What is the maximum continuous drain current for IRLU8203PBF at 100°C case temperature?

The maximum continuous drain current is 76A at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal conduction and accounts for R_DS(on) increase with junction temperature.

Does IRLU8203PBF have a built-in body diode, and what are its key characteristics?

Yes, it integrates a monolithic n-channel MOSFET body diode with V_SD = 0.65–1.3V at 12A, t_rr = 48–74ns, and Q_rr = 62–100nC. These parameters are fully characterized across temperature and enable reliable synchronous rectification without external diodes.

Can IRLU8203PBF be driven directly by a 3.3V microcontroller GPIO?

No - its gate threshold voltage range is 1.0–3.0V, but full enhancement requires ≥4.5V for acceptable R_DS(on). At 3.3V, R_DS(on) rises significantly above spec; a dedicated gate driver or level shifter is required for reliable switching.

What is the recommended PCB layout for thermal performance of IRLU8203PBF?

Use ≥1"² of 2oz copper connected to the exposed drain pad via multiple thermal vias (≥6×0.3mm) to internal ground planes. Follow IR Application Note AN-994 for footprint dimensions, solder mask clearance, and reflow profile - critical to achieving the rated 1.09°C/W R_θJC.