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Infineon Technologies IRLU8259PBF

Part No.:
IRLU8259PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIRLU8259PBF.pdf
Description:
MOSFET N-CH 25V 57A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,396

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Product details

Overview

IRLU8259PBF from Infineon Technologies is a 25V N-channel D-Pak power MOSFET optimized for high-frequency synchronous buck converters in CPU core voltage regulation and telecom DC-DC modules. It delivers 8.7mΩ RDS(on) at VGS = 4.5V, 6.8nC total gate charge, and 230A pulsed drain current, enabling efficient low-voltage, high-current switching in compact PCB layouts.

For engineers reviewing the IRLU8259PBF datasheet, IRLU8259PBF pinout, IRLU8259PBF application, or IRLU8259PBF equivalent, key selection criteria include its ultra-low gate impedance (2.2–3.6Ω), fully characterized avalanche rating (67mJ EAS), body diode reverse recovery time (17–26ns), and RoHS-compliant lead-free D-Pak package with thermal resistance RθJC = 3.15°C/W.

Technical Context

This HEXFET device uses planar vertical DMOS technology with an integral fast-recovery body diode. Its gate threshold voltage (1.35–2.35V) enables robust 4.5V logic-level drive, while low Qgd/Qgs ratio (2.4nC / 1.5nC + 1.1nC) ensures fast, controllable turn-on/turn-off transitions under high di/dt conditions.

Thermal design is supported by a junction-to-case thermal resistance of 3.15°C/W and SOA curves validated up to 100µs pulses at TC = 25°C. Avalanche energy is specified across temperature (EAS = 300mJ at TJ = 25°C, 67mJ at TJ = 175°C), confirming ruggedness in unclamped inductive switching.

Key Specifications

ParameterValue and Actual Design Meaning
VDS25V - Maximum blocking voltage compatible with 3.3V/5V input rails and point-of-load converter topologies
RDS(on) max @ 4.5V8.7mΩ - Enables ≤1.5W conduction loss at 17A DC, critical for thermally constrained CPU VRMs
Qg6.8nC - Low gate charge reduces driver power and allows use of small-footprint gate drivers
ID @ TC = 25°C25A - Continuous current rating supports high-density power stages without forced air cooling
tr / tf38ns / 8.9ns - Fast switching minimizes overlap losses in MHz-range synchronous rectification
trr / Qrr17–26ns / 15–23nC - Body diode recovery performance directly impacts efficiency in hard-switched DC-DC converters
RθJC3.15°C/W - Enables direct heatsinking via D-Pak tab, supporting >20W dissipation with modest thermal interface

Pinout & Package

The IRLU8259PBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. Pin 1 is Gate, Pin 2 is Drain (tab), Pin 3 is Source.

Pin/TerminalCircuit RoleDesign Meaning
Gate (Pin 1)Control terminalReceives logic-level PWM signal; low input capacitance (Ciss = 900pF) eases driver sizing
Drain (Pin 2 / Tab)High-side switch outputExposed copper tab provides primary thermal path and low-inductance high-current return
Source (Pin 3)Reference nodeConnected to power ground plane; serves as return path for gate drive and load current

Key Features

FeatureDesign Value
Ultra-low RDS(on) at 4.5V6.3mΩ typical - Reduces conduction loss by >30% vs. standard 5V-gate MOSFETs in 12V-in/1V-out VRMs
Fully characterized avalanche67mJ EAS at TJ = 175°C - Guarantees reliable operation during transient overloads without external snubbers
Low gate impedance2.2–3.6Ω - Minimizes gate ringing and improves EMI margin in high-dV/dt environments
Lead-free & RoHS compliantMeets IPC-J-STD-020 moisture sensitivity level 1 - Eliminates reflow concerns and supports automated assembly
Fast body diodetrr = 17ns, Qrr = 15nC - Reduces dead-time losses and cross-conduction risk in synchronous rectifiers

Applications

Server CPU Voltage RegulatorTelecom 48V-to-12V Isolated DC-DC

Use Scenario: High-current, multi-phase buck converter supplying 1–2V/100A+ to x86 or ARM server processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500kHz–1MHz with 4.5V gate drive from integrated controller.

Use Value: 8.7mΩ RDS(on) limits conduction loss to <1.5W per phase, enabling 92%+ efficiency at full load without heatsinks.

Use Scenario: Secondary-side synchronous rectifier in isolated forward or LLC converter for telecom base station power supplies.

IC Role / Device Role / Timing Role: N-channel MOSFET replacing Schottky diodes in 12V output stage, driven by transformer-coupled gate signals.

Use Value: 230A pulsed current rating and 26ns max trr support high peak currents and reduce reverse recovery losses by >40% vs. discrete diodes.

Industrial PLC Power ModuleAutomotive ADAS Domain Controller

Use Scenario: Compact 24V-input buck converter powering FPGA, memory, and I/O in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary power switch in non-isolated step-down regulator with 3.3V/5V/12V outputs.

Use Value: RθJC = 3.15°C/W allows direct mounting to metal chassis, eliminating dedicated heatsinks and reducing BOM count.

Use Scenario: Point-of-load converter supplying 1.8V/3A to radar processor SoCs in automotive ADAS domain controllers.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase buck stage, driven by automotive-grade PMIC with 4.5V logic compatibility.

Use Value: -55°C to +175°C TSTG/TJ rating ensures operation in under-hood environments with minimal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR8259PbFSame die, I-Pak package; RθJA = 110°C/W (vs. 50°C/W for D-Pak); no exposed drain tabLower thermal performance in PCB-mounted applications; suited for through-hole prototyping or legacy designsSelect when mechanical compatibility with I-Pak footprint is required and thermal budget permits higher junction rise
SiR872DP-T1-GE325V, 5.8mΩ @ 4.5V, 10.5nC Qg, PowerPAK SO-8; higher RDS(on) but lower Qg/RDS(on) ratioBetter high-frequency efficiency but limited to 60A pulsed; not rated for >150°C operationPrefer for space-constrained designs needing sub-10mm² footprint and <1MHz switching, where junction temp stays <125°C

Compared with IRLR8259PbF, the IRLU8259PBF offers superior thermal management via D-Pak's exposed drain, while SiR872DP trades off ruggedness and temperature range for smaller size and faster switching-making it suitable only in thermally benign, high-frequency applications.

Availability

IRLU8259PBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom DC-DC converters, industrial PLC power modules, and automotive ADAS domain controllers requiring stable component supply and long-term manufacturability.

Supply support for IRLU8259PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with decades of expertise in silicon-based power devices and system-level solutions.

The IRLU series targets high-efficiency, logic-level-driven power conversion in computing and communications infrastructure, emphasizing low RDS(on), fast switching, and rugged avalanche performance in standard surface-mount packages.

FAQ

Is IRLU8259PBF suitable for 3.3V gate drive?

Yes. With a gate threshold voltage range of 1.35–2.35V and guaranteed RDS(on) at VGS = 4.5V, the device switches fully on using standard 3.3V logic with adequate margin. However, conduction loss increases ~25% versus 4.5V drive due to higher RDS(on) at lower VGS.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies 24A continuous drain current at TC = 100°C and VGS = 10V. At 4.5V gate drive, derating applies: RDS(on) rises ~30% at 100°C, limiting practical continuous current to approximately 17–19A depending on layout and heatsinking.

Does IRLU8259PBF have integrated ESD protection?

No. The device lacks on-chip ESD protection structures. External gate protection (e.g., 12V Zener clamp between gate and source) is recommended during handling and PCB assembly to prevent damage from human-body-model discharges exceeding ±2kV.

Can IRLU8259PBF replace IRLU8721PBF in existing designs?

Not directly. While both are D-Pak N-channel MOSFETs, IRLU8721PBF has higher VDS (30V), lower RDS(on) (4.5mΩ), and different gate charge (12nC). Substitution requires verifying SOA, thermal limits, and driver capability-especially given IRLU8259PBF's lower voltage rating and reduced Qg.

IRLU8259PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
57A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
8.7mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
900 pF @ 13 V
FET Feature:
-
Power Dissipation (Max):
48W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK

IRLU8259PBF FAQ

1.How can I place an order for IRLU8259PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU8259PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU8259PBF reliable?

The price and inventory of IRLU8259PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU8259PBF is usually 5 days.

3.What payment methods are accepted for IRLU8259PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU8259PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU8259PBF?

IRLU8259PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU8259PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU8259PBF?

For technical support, including IRLU8259PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU8259PBF requirements.

6.How does Aetrix verify that IRLU8259PBF is sourced from the original manufacturer or authorized distributors?

All IRLU8259PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU8259PBF meets industry standards.

7.What is the process for return or replacement of IRLU8259PBF?

All IRLU8259PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLU8259PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU8259PBF part is unused and in its original packaging.

Return procedure for IRLU8259PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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