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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU8726PBF

Name: IRLU8726PBF
Brand: Infineon Technologies
SKU: IRLU8726PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLU8726PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU8726PBF.pdf

Description:: MOSFET N-CH 30V 86A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLU8726PBF from Infineon Technologies (formerly International Rectifier) is a 30V, 86A D-Pak N-channel HEXFET Power MOSFET optimized for high-frequency synchronous rectification in DC-DC converters. It delivers 4.0 mΩ R_DS(on) at V_GS = 10 V, 15 nC total gate charge, and 2.0 Ω gate resistance - enabling fast switching with low conduction loss in telecom and processor power stages.

For engineers reviewing the IRLU8726PBF datasheet, IRLU8726PBF pinout, IRLU8726PBF application, or IRLU8726PBF equivalent, key selection criteria include its 30V V_DS, ultra-low R_DS(on) at 4.5V–10V drive, fully characterized avalanche rating (120 mJ), RoHS-compliant D-Pak package, and body diode recovery performance (t_rr = 24–36 ns, Q_rr = 52–78 nC).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-assisted source contact design to achieve low on-resistance while maintaining robust safe operating area (SOA) up to 100 µs pulse width at T_C = 25°C. Its gate threshold voltage (1.35–2.35 V) and negative temperature coefficient (−8.6 mV/°C) support stable parallel operation.

The device integrates a co-packaged, low-V_SD (≤1.0 V), fast-recovery body diode with controlled Q_rr and soft reverse recovery - critical for minimizing switching loss and EMI in synchronous buck topologies operating above 300 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 12V/24V input rails with 2× safety margin against transient overvoltage
R_DS(on) max @ V_GS = 10 V	5.8 mΩ - enables ≤1.5 W conduction loss at 86 A continuous drain current
Q_g typ.	15 nC - allows efficient gate drive with <1 W driver power at 1 MHz switching
t_r/t_f	49 ns / 16 ns - supports >1 MHz hard-switching with minimal overlap loss
E_AS	120 mJ - withstands unclamped inductive energy during fault conditions without failure
t_rr	24–36 ns - reduces diode reverse recovery loss and voltage overshoot in sync-rectified converters
R_θJC	2.0 °C/W - enables 75 W power dissipation with ≤150°C junction rise over 25°C case

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal enhancement and mechanical stability. Standard 3-pin configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Receives PWM signal; low 2.0 Ω gate resistance minimizes ringing and enables direct microcontroller drive at 4.5V
D	Drain connection	High-current output node; tied to exposed copper pad for low-inductance, high-current path and thermal conduction to PCB
S	Source reference	Power ground return; serves as common reference for gate drive and current sensing in high-side or low-side configurations

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V V_GS	Enables direct logic-level drive from 5V or 4.5V controllers without level-shifting
Fully characterized avalanche rating	Guarantees single-pulse ruggedness to 120 mJ - eliminates need for external snubbers in inductive switching
Low gate charge (Q_g = 15 nC)	Reduces gate driver power loss and simplifies gate drive design for high-frequency (>500 kHz) operation
Optimized body diode recovery	Soft t_rr and controlled Q_rr minimize voltage spikes and EMI during synchronous rectification
Lead-free, RoHS-compliant construction	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard reflow assembly

Applications

Server VRM Synchronous Rectifier

Telecom 48V-to-12V Isolated DC-DC

Use Scenario: High-current, high-efficiency 3.3V/1.8V/1.2V output stage in server voltage regulator modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; switched at 300–600 kHz with precise dead-time control.

Use Value: Reduces conduction loss by >40% vs. 40V Schottky, lowering VRM temperature rise and improving full-load efficiency to >94%.

Use Scenario: Secondary-side synchronous rectification in 48V input telecom PSUs delivering 12V/30A outputs.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or secondary-side rectifier in phase-shifted full-bridge topology.

Use Value: Enables >92% system efficiency at 500 kHz due to 4.0 mΩ R_DS(on) and low Q_rr-driven EMI reduction.

Industrial PLC Power Supply

GPU Power Delivery Module

Use Scenario: 24V-to-5V/3.3V isolated auxiliary supply in programmable logic controller backplanes.

IC Role / Device Role / Timing Role: High-side switch in flyback primary or low-side rectifier in forward converter secondary.

Use Value: Supports 100% load step response with <50 µs recovery due to robust SOA and low R_DS(on).

Use Scenario: Multi-phase 0.8V/300A GPU core power delivery using paralleled phases.

IC Role / Device Role / Timing Role: Phase-leg low-side FET in 3-phase buck converter; driven by dedicated gate driver IC.

Use Value: Delivers <0.5°C/W effective thermal resistance per phase when mounted on 2 oz copper with thermal vias.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8726PbF	I-Pak package (TO-251); identical electrical specs but higher R_θJA (110 °C/W vs. 50 °C/W)	Better suited for through-hole prototyping or lower-power designs where thermal mass compensates for poorer PCB heat spreading	Select when board layout lacks thermal pad space or requires manual soldering
SiR872DP-T1-GE3	Vishay 30V TrenchFET; R_DS(on) = 4.2 mΩ @ 10V, Q_g = 16.5 nC, same D-Pak footprint	Higher gate charge increases driver loss slightly but offers tighter R_DS(on) distribution (±10% vs. ±15%)	Prefer for volume production requiring tighter parametric yield and AEC-Q101 qualification

Compared with IRLR8726PbF, the IRLU8726PBF provides superior thermal performance via D-Pak's exposed drain pad, while SiR872DP-T1-GE3 trades marginal R_DS(on) improvement for broader automotive qualification and tighter lot-to-lot consistency - making it preferable for long-lifecycle industrial programs.

Availability

IRLU8726PBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial PLC power supplies, and GPU power delivery modules requiring stable component supply and long-term manufacturability.

Supply support for IRLU8726PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The HEXFET Power MOSFET product line was originally developed by International Rectifier and continues under Infineon to deliver high-efficiency, high-reliability discrete power switches for computing, telecom, and industrial power conversion.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLU8726PBF supports 30 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating from 86 A at 25°C reflects thermal limits of the D-Pak package and ensures reliable operation within its Safe Operating Area (SOA) curve up to 100 µs pulse width.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 1.8–10 Ω) is recommended to dampen parasitic oscillation caused by trace inductance and the device's 2.0 Ω intrinsic gate resistance. The datasheet's switching time test circuit (Fig. 13a) uses R_G = 1.8 Ω, and layout best practices emphasize short, low-inductance gate routing to prevent shoot-through in half-bridge configurations.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the integrated body diode is specifically characterized for synchronous rectification, with t_rr = 24–36 ns and Q_rr = 52–78 nC at I_F = 20 A. Its soft recovery behavior minimizes voltage overshoot and EMI, and the diode forward voltage (V_SD ≤ 1.0 V) ensures low conduction loss when conducting reverse current during dead time.

Can IRLU8726PBF be paralleled for higher current handling?

Yes - its negative temperature coefficient of R_DS(on) (−8.6 mV/°C for V_GS(th)) and matched transfer characteristics enable stable current sharing. Successful paralleling requires symmetrical PCB layout, individual gate resistors, and Kelvin-source connections to avoid imbalance; typical designs use 2–4 devices per phase in multi-phase VRMs.

IRLU8726PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 86A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2150 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

IRLU8726PBF FAQ

1.How can I place an order for IRLU8726PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU8726PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU8726PBF reliable?

The price and inventory of IRLU8726PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU8726PBF is usually 5 days.

3.What payment methods are accepted for IRLU8726PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU8726PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU8726PBF?

IRLU8726PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU8726PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU8726PBF?

For technical support, including IRLU8726PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU8726PBF requirements.

6.How does Aetrix verify that IRLU8726PBF is sourced from the original manufacturer or authorized distributors?

All IRLU8726PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU8726PBF meets industry standards.

7.What is the process for return or replacement of IRLU8726PBF?

All IRLU8726PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLU8726PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU8726PBF part is unused and in its original packaging.

Return procedure for IRLU8726PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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