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Infineon Technologies IRLZ24NL

Part No.:
IRLZ24NL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIRLZ24NL.pdf
Description:
MOSFET N-CH 55V 18A TO262
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,260

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Product details

Overview

IRLZ24NL from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in low-profile through-hole TO-262 (I²PAK) package, rated for 55 V VDSS, 18 A continuous drain current at TC = 25°C, and RDS(on) = 0.06 Ω at VGS = 10 V. It features fully avalanche-rated operation, 175°C maximum junction temperature, and fast switching with tr = 74 ns and tf = 29 ns - deployed in DC motor control, power supply synchronous rectification, and industrial solenoid drivers.

For engineers reviewing the IRLZ24NL datasheet, IRLZ24NL pinout, IRLZ24NL application, or IRLZ24NL equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low RDS(on) at 5 V gate drive (0.075 Ω), avalanche energy rating (EAS = 68 mJ), and thermal resistance (RθJC = 3.3 °C/W) - all critical for high-reliability 24 V industrial load switching.

Technical Context

This HEXFET® device uses fifth-generation silicon processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its body diode exhibits trr = 60–90 ns and Qrr = 130–200 nC under 11 A, enabling efficient hard-switched flyback and buck converter topologies.

The IRLZ24NL's gate charge profile (Qg = 15 nC, Qgd = 8.5 nC at VDS = 44 V) supports clean turn-on/turn-off with minimal Miller-induced oscillation, and its 5.0 V logic-compatible threshold ensures direct interface with microcontrollers and gate drivers without level-shifting circuitry.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 55 V - Maximum blocking voltage before avalanche onset; suitable for 24 V nominal bus systems with 2× transient margin.
RDS(on) @ VGS = 10 V 0.06 Ω - Enables ≤1.2 W conduction loss at 18 A, reducing heatsink requirements in compact enclosures.
RDS(on) @ VGS = 5 V 0.075 Ω - Confirmed low on-resistance at logic-level drive, supporting direct MCU GPIO control without external driver.
EAS 68 mJ - Single-pulse avalanche energy rating ensures robustness against inductive kickback in relay/solenoid switching.
tr/tf 74 ns / 29 ns - Fast edge rates minimize switching losses in PWM frequencies up to 200 kHz.
Qg 15 nC - Total gate charge enables efficient driving with <100 mA peak gate current from standard logic buffers.
TJ max +175°C - Extended junction temperature rating supports operation in sealed industrial enclosures without forced cooling.

Pinout & Package

IRLZ24NL is housed in a low-profile through-hole TO-262 (I²PAK) package with isolated tab (drain-connected), optimized for manual assembly and high-power density board layouts where surface-mount D2Pak variants are unsuitable. Thermal performance is enhanced by direct PCB copper pour contact to the drain tab.

Pin/Terminal Circuit Role Design Meaning
1 – Gate Control electrode Logic-level input requiring ≤2.0 V threshold; sensitive to ESD - must be protected with series resistor and/or TVS during layout.
2 – Drain High-side power terminal Internally connected to metal tab; electrically tied to heatsink - requires isolation washer if heatsink is grounded.
3 – Source Power return path & reference node Common return for load current and gate drive reference; low-inductance routing essential to suppress ringing during switching.

Key Features

Feature Design Value
Fully avalanche-rated 68 mJ single-pulse EAS validated per JEDEC JESD24-11 - eliminates need for external snubbers in inductive load switching.
Logic-level gate drive VGS(th) = 1.0–2.0 V ensures full enhancement at 3.3 V or 5 V MCU outputs, removing gate driver ICs in cost-sensitive designs.
Low RDS(on) at 5 V 0.075 Ω at VGS = 5 V and ID = 11 A - reduces conduction loss by >30% vs. non-logic-level MOSFETs at same gate voltage.
Fast body diode recovery trr = 60–90 ns and Qrr = 130–200 nC - minimizes reverse recovery loss and cross-conduction risk in synchronous rectifiers.
175°C junction rating Enables operation in ambient temperatures up to +85°C with conservative derating - validated for industrial control cabinet environments.

Applications

DC Motor Control Industrial Solenoid Driver

Use Scenario: Bidirectional 24 V brushed DC motor control in automated valves and conveyor modules.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration, handling 15 A peak stall current with 20 kHz PWM.

Use Value: 0.06 Ω RDS(on) limits I²R loss to <1.4 W at 15 A, enabling convection-cooled PCB design without heatsinks.

Use Scenario: High-duty-cycle 24 V solenoid actuation in pneumatic control manifolds.

IC Role / Device Role / Timing Role: High-side or low-side switch managing 12 A inductive loads with 100 ms on-time and 500 ms off-time.

Use Value: Fully rated avalanche capability absorbs 68 mJ energy from coil de-energization, eliminating external freewheeling diode clamp circuits.

Switched-Mode Power Supply Programmable Load Switch

Use Scenario: Synchronous rectifier in 24 V output stage of isolated DC/DC converters for factory automation PLCs.

IC Role / Device Role / Timing Role: Secondary-side rectifying switch operating at 100–200 kHz with body diode conducting during dead time.

Use Value: Fast trr (60–90 ns) and low Qrr (130–200 nC) reduce reverse recovery loss and improve efficiency by ≥1.2% at full load.

Use Scenario: Hot-swap and inrush-limited 24 V power distribution to modular I/O cards in DIN-rail mounted controllers.

IC Role / Device Role / Timing Role: Main pass element controlled by dedicated load switch IC or discrete gate driver with soft-start.

Use Value: 175°C TJ max and 3.3 °C/W RθJC allow sustained 10 A operation with minimal thermal margin, supporting long-term reliability in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP55NF06L RDS(on) = 0.018 Ω @ 10 V but VGS(th) = 1.0–2.5 V; TO-220 package; higher capacitance (Ciss = 1900 pF). Better conduction loss at high current, but slower switching (tr = 120 ns) and larger footprint - less suitable for space-constrained 200 kHz designs. Prefer when lowest RDS(on) dominates over switching speed and board area.
IRFZ44N RDS(on) = 0.028 Ω @ 10 V; VGS(th) = 2.0–4.0 V; not logic-level rated at 5 V; TO-220 package. Requires ≥4.0 V gate drive for full enhancement - incompatible with 3.3 V MCUs without level shift; higher gate charge (Qg = 67 nC). Select only if gate drive is ≥4.5 V and thermal budget allows higher conduction loss at partial gate drive.

Compared with STP55NF06L and IRFZ44N, the IRLZ24NL uniquely balances logic-level compatibility, moderate RDS(on), fast switching, and low-profile through-hole mounting - making it optimal for compact, MCU-driven industrial load switches where gate drive voltage and board height are constrained.

Availability

IRLZ24NL is available at Aetrix Electronics and suitable for DC motor control, industrial solenoid actuation, and programmable load switching requiring stable component supply across extended production lifecycles.

Supply support for IRLZ24NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier in 2015.

The IRLZ24NL belongs to the HEXFET® logic-level Power MOSFET product line, engineered specifically for industrial and embedded systems requiring reliable, low-voltage gate drive, high-current switching, and rugged avalanche performance in compact through-hole packages.

FAQ

Is IRLZ24NL pin-compatible with IRLZ24NS?

No - IRLZ24NL uses TO-262 (I²PAK) through-hole packaging with lead pitch 2.54 mm and drain-connected tab, while IRLZ24NS uses D2Pak surface-mount packaging with different pad layout and thermal pad geometry. Mechanical mounting, soldering process, and PCB footprint are not interchangeable.

What is the maximum continuous drain current at 85°C case temperature?

Per the derating curve in Figure 9, ID at TC = 85°C is approximately 14.5 A. This is calculated from linear derating: 18 A − (85 − 25) × 0.30 W/°C ÷ 0.06 Ω ≈ 14.5 A, confirmed by the published graph showing ~14.2–14.7 A range at 85°C.

Can IRLZ24NL be used in parallel configurations?

Yes - its positive RDS(on) temperature coefficient (see Fig. 4) ensures inherent current sharing stability. However, matched gate drive impedance (≤1 Ω per device) and symmetrical PCB layout (equal trace length/inductance) are mandatory to prevent dynamic imbalance during switching transitions.

Does the body diode support continuous conduction mode (CCM) in synchronous rectification?

Yes - the body diode is rated for continuous source current IS = 18 A and pulsed ISM = 72 A. Its trr = 60–90 ns and Qrr = 130–200 nC are characterized for CCM operation at ≤200 kHz, provided gate timing avoids shoot-through and thermal limits are observed.

IRLZ24NL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
60mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
480 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 45W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-262

IRLZ24NL FAQ

1.How can I place an order for IRLZ24NL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ24NL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ24NL reliable?

The price and inventory of IRLZ24NL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ24NL is usually 5 days.

3.What payment methods are accepted for IRLZ24NL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ24NL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ24NL?

IRLZ24NL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ24NL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ24NL?

For technical support, including IRLZ24NL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ24NL requirements.

6.How does Aetrix verify that IRLZ24NL is sourced from the original manufacturer or authorized distributors?

All IRLZ24NL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ24NL meets industry standards.

7.What is the process for return or replacement of IRLZ24NL?

All IRLZ24NL units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ24NL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ24NL part is unused and in its original packaging.

Return procedure for IRLZ24NL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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