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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLZ24NS

Name: IRLZ24NS
Brand: Infineon Technologies
SKU: IRLZ24NS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ24NS

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRLZ24NS.pdf

Description:: MOSFET N-CH 55V 18A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,137

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Product details

Overview

IRLZ24NS from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in D2PAK surface-mount package, rated for 55 V V_DS, 18 A continuous drain current at T_C = 25°C, and R_DS(on) = 0.06 Ω at V_GS = 10 V. It features fast switching (t_r = 74 ns), full avalanche rating (E_AS = 68 mJ), and 175°C maximum junction temperature - deployed in DC-DC converters, motor drives, and solid-state relay replacements.

For engineers reviewing the IRLZ24NS datasheet, IRLZ24NS pinout, IRLZ24NS application, or IRLZ24NS equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 5 V gate bias (0.075 Ω), avalanche ruggedness, thermal resistance (R_θJC = 3.3 °C/W), and D2PAK footprint suitability for high-current PCB layouts.

Technical Context

This fifth-generation HEXFET device uses advanced planar processing to minimize on-resistance per die area while maintaining robust safe operating area (SOA) up to 10 ms pulses at 175°C. Its body diode exhibits t_rr = 60–90 ns and Q_rr = 130–200 nC under 11 A, 100 A/µs conditions - critical for synchronous rectification and flyback snubberless designs.

The gate charge profile shows Q_g = 15 nC total, with Q_gd = 8.5 nC (Miller charge) at V_DS = 44 V, enabling predictable turn-off control in hard-switched topologies. Thermal design is supported by validated R_θJA = 40 °C/W (PCB-mounted, steady-state) and linear derating of 0.30 W/°C above 25°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche onset; supports 48 V bus systems with margin.
R_DS(on) @ V_GS = 10 V	0.06 Ω - Enables <1.2 W conduction loss at 18 A, reducing heatsink requirements.
R_DS(on) @ V_GS = 5 V	0.075 Ω - Confirmed logic-level operation compatible with 5 V microcontrollers without gate drivers.
Q_g	15 nC - Total gate charge determines driver power and switching loss in PWM frequency range up to 500 kHz.
t_r/t_f	74 ns / 29 ns - Fast edge rates reduce transition losses but require careful layout to suppress EMI.
E_AS	68 mJ - Single-pulse unclamped inductive switching capability enables robust overcurrent protection in motor H-bridges.
R_θJC	3.3 °C/W - Junction-to-case thermal resistance allows direct heatsink mounting for >40 W dissipation at ΔT = 130°C.

Pinout & Package

The IRLZ24NS is housed in a D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Lead assignments: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Logic-level input requiring ≤2.0 V threshold; driven directly by MCU GPIO or low-side driver IC.
2 - Drain	High-side current path	Internally connected to exposed copper tab - must be soldered to large copper pour or heatsink for thermal management.
3 - Source	Reference node / return path	Common reference for gate drive and load current; connects to ground or low-side switch node.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.0–2.0 V ensures reliable turn-on with 3.3 V or 5 V controllers without level-shifting.
Full avalanche rating	Rated for repetitive and single-pulse avalanche events up to 68 mJ - eliminates need for external clamping in inductive loads.
D2PAK thermal performance	R_θJC = 3.3 °C/W enables >40 W continuous power dissipation when mounted to heatsink via drain tab.
Low Q_gd/Q_g ratio	Q_gd = 8.5 nC of total Q_g = 15 nC improves Miller immunity and reduces risk of spurious turn-on in high-dv/dt environments.
Body diode recovery	t_rr = 60–90 ns and Q_rr = 130–200 nC support efficient synchronous rectification in buck and flyback converters.

Applications

Brushless DC Motor Control

Industrial DC-DC Converters

Use Scenario: Half-bridge leg in 24–48 V BLDC inverters driving fans, pumps, or compressors.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (t_f = 29 ns) and avalanche tolerance during commutation spikes.

Use Value: Eliminates external snubbers due to 68 mJ E_AS; R_DS(on) = 0.06 Ω minimizes conduction loss at 15 A RMS.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V input, 12 V output forward converter.

IC Role / Device Role / Timing Role: Secondary-side power switch with body diode conducting freewheeling current before synchronous turn-on.

Use Value: t_rr = 60 ns and low Q_rr reduce switching loss and EMI during reverse recovery.

Solid-State Relay Replacement

Automotive Body Control Modules

Use Scenario: High-side load switch replacing electromechanical relays in HVAC actuators or lighting circuits.

IC Role / Device Role / Timing Role: Logic-level controlled power switch with integrated avalanche energy handling for inductive kick suppression.

Use Value: 175°C T_J rating and 13 A ID@100°C enable operation in sealed enclosures without forced air cooling.

Use Scenario: Window lift or seat position motor driver in 12 V automotive systems.

IC Role / Device Role / Timing Role: H-bridge low-side switch with robust short-circuit withstand (IDM = 72 A pulse) and thermal shutdown margin.

Use Value: R_θJC = 3.3 °C/W allows direct heatsink attachment to meet AEC-Q101 transient thermal requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44N	V_DS = 55 V, R_DS(on) = 0.028 Ω @ 10 V, but V_GS(th) = 2–4 V - not logic-level at 3.3 V.	Requires gate driver for 3.3 V MCU control; higher conduction loss at 5 V gate bias.	Preferable only if gate drive voltage ≥10 V and lower R_DS(on) is critical.
STP55NF06L	V_DS = 60 V, R_DS(on) = 0.014 Ω @ 10 V, V_GS(th) = 1–2.5 V - tighter threshold spread, slightly better SOA.	Same logic-level compatibility; improved R_DS(on) but higher Q_g (34 nC) increases driver demand.	Better for high-efficiency 5 V systems where gate drive strength permits.

Compared with IRLZ24NS, IRFZ44N demands higher gate voltage for full enhancement and lacks guaranteed 5 V operation, while STP55NF06L offers lower on-resistance but requires more gate drive energy - making IRLZ24NS optimal for cost-sensitive, thermally constrained 3.3/5 V MCU-driven switches.

Availability

IRLZ24NS is available at Aetrix Electronics and suitable for brushless DC motor control, industrial DC-DC converters, solid-state relay replacement, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for IRLZ24NS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with legacy expertise from acquired brands including International Rectifier.

The IRLZ24NS belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency switching in medium-power industrial and automotive applications where logic-level drive, avalanche ruggedness, and thermal reliability are essential.

FAQ

Is IRLZ24NS suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) specified from 1.0 V to 2.0 V and R_DS(on) = 0.105 Ω at V_GS = 4.0 V and I_D = 9.0 A, the IRLZ24NS fully enhances using standard 3.3 V GPIO outputs - verified by datasheet test conditions and typical transfer characteristics at T_J = 25°C and 175°C.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies I_D @ T_C = 100°C as 13 A at V_GS = 10 V. This value accounts for thermal derating and is measured under steady-state PCB-mount conditions - not ambient temperature - and reflects actual conduction capability when heatsinked to maintain T_C ≤ 100°C.

Does IRLZ24NS have a built-in body diode, and what are its recovery specs?

Yes. The intrinsic p-n junction body diode has V_SD = 1.3 V at I_S = 11 A and T_J = 25°C. Its reverse recovery time t_rr is 60–90 ns, with Q_rr = 130–200 nC under di/dt = 100 A/µs - parameters confirmed in Figure 7 and Table "Source-Drain Ratings and Characteristics".

Can IRLZ24NS be used in parallel configurations?

Yes, but with design precautions. Its positive R_DS(on) temperature coefficient (see Fig. 4) promotes current sharing, yet gate drive imbalance and layout asymmetry can cause uneven stress. Use matched gate resistors, symmetrical PCB traces, and individual source resistors for current sensing - validated in application note AN-994 for D2PAK thermal footprints.

IRLZ24NS Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRLZ24NS FAQ

1.How can I place an order for IRLZ24NS through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ24NS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ24NS reliable?

The price and inventory of IRLZ24NS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ24NS is usually 5 days.

3.What payment methods are accepted for IRLZ24NS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ24NS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ24NS?

IRLZ24NS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ24NS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ24NS?

For technical support, including IRLZ24NS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ24NS requirements.

6.How does Aetrix verify that IRLZ24NS is sourced from the original manufacturer or authorized distributors?

All IRLZ24NS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ24NS meets industry standards.

7.What is the process for return or replacement of IRLZ24NS?

All IRLZ24NS units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ24NS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ24NS part is unused and in its original packaging.

Return procedure for IRLZ24NS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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