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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLZ24NSTRL

Name: IRLZ24NSTRL
Brand: Infineon Technologies
SKU: IRLZ24NSTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ24NSTRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRLZ24NSTRL.pdf

Description:: MOSFET N-CH 55V 18A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:2,285

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Product details

Overview

IRLZ24NSTRL from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in D2PAK (TO-262) surface-mount package, rated for 55 V V_DS, 18 A continuous drain current at T_C = 25°C, and R_DS(on) = 0.06 Ω at V_GS = 10 V. It features fully avalanche-rated operation, fast switching (t_r = 74 ns, t_f = 29 ns), and 175°C maximum junction temperature - deployed in DC-DC synchronous rectification, motor drive half-bridges, and industrial power supplies.

For engineers reviewing the IRLZ24NSTRL datasheet, IRLZ24NSTRL pinout, IRLZ24NSTRL application, or IRLZ24NSTRL equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 5 V gate bias (0.075 Ω), avalanche energy rating (E_AS = 68 mJ), and thermal resistance (R_θJC = 3.3 °C/W) for high-power density board layouts.

Technical Context

This fifth-generation HEXFET device uses advanced planar processing to achieve low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its body diode exhibits t_rr = 60–90 ns and Q_rr = 130–200 nC under 11 A forward current and 100 A/µs di/dt, enabling efficient hard-switched topologies without external snubbers.

The D2PAK package provides low-inductance source connection (L_S = 7.5 nH) and optimized thermal path from junction to case (3.3 °C/W), supporting high-current conduction with minimal self-heating. Gate charge parameters (Q_g = 15 nC, Q_gd = 8.5 nC at V_DS = 44 V) reflect design trade-offs favoring moderate-speed, low-loss switching in 100–500 kHz SMPS stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche onset; supports 48 V nominal bus systems with 15% margin.
R_DS(on) @ V_GS = 10 V	0.06 Ω - Conduction loss of 19.4 W at 18 A, requiring heatsinking above ~5 W dissipation.
R_DS(on) @ V_GS = 5 V	0.075 Ω - Enables direct microcontroller GPIO drive without level-shifting in low-voltage control circuits.
E_AS	68 mJ - Single-pulse avalanche energy rating ensures robustness against inductive load turn-off transients.
t_r/t_f	74 ns / 29 ns - Fast edge rates reduce switching losses but demand careful PCB layout to suppress EMI.
C_iss/C_oss/C_rss	480 pF / 130 pF / 61 pF - Low reverse transfer capacitance minimizes Miller-induced shoot-through risk in bridge configurations.
T_J max	+175°C - Enables operation in sealed enclosures or high-ambient industrial environments without derating.

Pinout & Package

D2PAK (TO-262) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration with GATE (Pin 1), DRAIN (Pin 2), SOURCE (Pin 3).

Pin/Terminal	Circuit Role	Design Meaning
1 - GATE	Control electrode	Logic-level compatible input (V_GS(th) = 1.0–2.0 V); requires <15 nC total charge for full enhancement.
2 - DRAIN	High-side power terminal	Internally connected to exposed copper pad; must be soldered to large PCB copper pour for thermal management.
3 - SOURCE	Power return and reference node	Low-inductance path (L_S = 7.5 nH); serves as local ground reference for gate driver and current sensing.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at 5 V gate voltage - eliminates need for dedicated gate drivers in MCU-based systems.
Fully avalanche rated	Withstands 68 mJ single-pulse energy without failure - enables reliable operation in inductive switching without clamping circuits.
Low R_DS(on) × Q_g figure-of-merit	0.06 Ω × 15 nC = 0.9 - balances conduction and switching losses for high-efficiency 100–300 kHz converters.
Optimized body diode	Q_rr = 130–200 nC and t_rr = 60–90 ns - reduces reverse recovery loss and EMI in synchronous rectifier applications.
175°C junction rating	Supports extended thermal margin in confined spaces - allows sustained 13 A current at T_C = 100°C without derating.

Applications

DC-DC Synchronous Rectifier

Brushed DC Motor Driver

Use Scenario: Secondary-side switch in isolated 48 V input → 12 V/20 A output flyback or forward converter.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; commutated at 250 kHz with precise gate timing.

Use Value: Reduces conduction loss by 65% vs. 40 V Schottky (0.06 Ω × 20² A = 24 W saved), improving efficiency from 89% to 94%.

Use Scenario: H-bridge leg in 24 V, 15 A brushed motor controller for automated gate actuators.

IC Role / Device Role / Timing Role: High-current half-bridge switch; driven by PWM with dead-time control to prevent shoot-through.

Use Value: Avalanche rating absorbs inductive kickback during PWM off-time, eliminating external TVS and reducing BOM count by one component.

Industrial PLC Output Module

LED Constant-Current Driver

Use Scenario: Solid-state relay replacement in 24 V DC digital output module handling 10 A resistive loads.

IC Role / Device Role / Timing Role: Load switch controlled via optocoupler-isolated logic; operated in linear or saturated mode.

Use Value: 175°C rating ensures reliability under sustained 8 A load at 60°C ambient without forced air - extends field lifetime beyond 10 years.

Use Scenario: Dimmable constant-current switch in 36 V string LED driver for commercial lighting fixtures.

IC Role / Device Role / Timing Role: PWM-controlled current sink regulating 1.2 A through 10-series white LEDs.

Use Value: Low R_DS(on) at 4.5 V gate drive enables direct dimming from 3.3 V MCU PWM, reducing system cost and footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NSTRLPBF	R_DS(on) = 0.028 Ω @ 10 V but V_GS(th) = 2–4 V; higher Q_g = 67 nC; not logic-level at 5 V.	Requires gate driver for 3.3 V MCU control; better for high-frequency, low-loss primary-side switching.	Select when gate drive voltage ≥ 10 V and lowest conduction loss is critical; avoid for 5 V logic interfaces.
STP55NF06L	R_DS(on) = 0.014 Ω @ 10 V; V_GS(th) = 1–2.5 V; TO-220 package; R_θJA = 62 °C/W (vs. 40 °C/W for D2PAK).	Larger footprint and inferior thermal performance in surface-mount designs; suited for prototyping or low-volume through-hole builds.	Prefer for hand-soldered evaluation or legacy through-hole boards; not recommended for high-density SMT production.

Compared with IRLZ24NSTRL, IRFZ44NSTRLPBF delivers lower R_DS(on) but demands higher gate voltage and increases switching loss due to triple gate charge; STP55NF06L offers superior on-resistance but sacrifices thermal efficiency and board-area optimization in automated SMT assembly.

Availability

IRLZ24NSTRL is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC synchronous rectifiers, and programmable logic controller (PLC) output modules requiring stable component supply and long-term manufacturing continuity.

Supply support for IRLZ24NSTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The IRLZ24NS series belongs to Infineon's legacy HEXFET® logic-level MOSFET product line, engineered for high-current, low-voltage switching in industrial automation, power supplies, and motor control where gate drive simplicity and avalanche ruggedness are essential.

FAQ

Is IRLZ24NSTRL suitable for 3.3 V microcontroller gate drive?

Yes - its gate threshold voltage range is 1.0–2.0 V, and it achieves R_DS(on) = 0.105 Ω at V_GS = 4.0 V and I_D = 9.0 A. At 3.3 V, it operates in the linear region with partial enhancement, delivering ~6–7 A continuous current depending on heatsinking. For full 18 A conduction, 5 V or higher gate drive is required.

What is the maximum safe operating frequency for IRLZ24NSTRL in a hard-switched buck converter?

Based on t_r = 74 ns and t_f = 29 ns, plus Q_g = 15 nC and typical gate driver capability (±2 A peak), the practical upper limit is ~500 kHz. Above this, switching losses dominate and thermal management becomes challenging - especially above 10 A load current without active cooling.

Does IRLZ24NSTRL require a gate resistor, and if so, what value is recommended?

Yes - a gate resistor is required to dampen ringing and control dV/dt. For 5 V logic drive and 100–300 kHz operation, a 10–22 Ω series resistor is recommended. Lower values (≤10 Ω) increase switching speed but risk overshoot; higher values (>47 Ω) slow turn-on and raise switching loss unnecessarily.

Can IRLZ24NSTRL replace IRLZ24NL in the same PCB footprint?

No - IRLZ24NSTRL uses the surface-mount D2PAK (TO-262) package, while IRLZ24NL uses the through-hole TO-262 variant with different lead geometry and mounting holes. The footprints are mechanically incompatible; redesign of the PCB land pattern and stencil is required for substitution.

IRLZ24NSTRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRLZ24NSTRL FAQ

1.How can I place an order for IRLZ24NSTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ24NSTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ24NSTRL reliable?

The price and inventory of IRLZ24NSTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ24NSTRL is usually 5 days.

3.What payment methods are accepted for IRLZ24NSTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ24NSTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ24NSTRL?

IRLZ24NSTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ24NSTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ24NSTRL?

For technical support, including IRLZ24NSTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ24NSTRL requirements.

6.How does Aetrix verify that IRLZ24NSTRL is sourced from the original manufacturer or authorized distributors?

All IRLZ24NSTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ24NSTRL meets industry standards.

7.What is the process for return or replacement of IRLZ24NSTRL?

All IRLZ24NSTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ24NSTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ24NSTRL part is unused and in its original packaging.

Return procedure for IRLZ24NSTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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