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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLZ24NSTRR

Name: IRLZ24NSTRR
Brand: Infineon Technologies
SKU: IRLZ24NSTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ24NSTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRLZ24NSTRR.pdf

Description:: MOSFET N-CH 55V 18A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLZ24NSTRR from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in D2PAK surface-mount package, rated for 55 V V_DS, 18 A continuous drain current at T_C = 25°C, and R_DS(on) = 0.06 Ω at V_GS = 10 V. It features fully avalanche-rated operation, 175°C maximum junction temperature, and fast switching with t_r = 74 ns and t_f = 29 ns - deployed in DC-DC synchronous rectification, motor drive half-bridges, and industrial power supplies.

For engineers reviewing the IRLZ24NSTRR datasheet, IRLZ24NSTRR pinout, IRLZ24NSTRR application, or IRLZ24NSTRR equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 5 V gate drive (0.075 Ω), avalanche energy rating (E_AS = 68 mJ), and thermal resistance (R_θJC = 3.3 °C/W) - critical for high-reliability power stage design.

Technical Context

This fifth-generation HEXFET device uses advanced planar processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its body diode exhibits t_rr = 60–90 ns and Q_rr = 130–200 nC under 11 A, enabling efficient hard-switched topologies without external snubbers.

The D2PAK package provides low-inductance source connection (L_S = 7.5 nH) and direct heatsink interface, supporting PD = 45 W at T_C = 25°C. Gate charge parameters (Q_g = 15 nC, Q_gd = 8.5 nC) are optimized for 5 V microcontroller-driven gate drivers in compact power converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage in high-side switch or freewheeling position of buck/half-bridge.
R_DS(on) @ V_GS = 10 V	0.06 Ω - Enables ≤1.2 W conduction loss at 18 A, reducing thermal load in 12 V/24 V systems.
R_DS(on) @ V_GS = 5 V	0.075 Ω - Ensures full enhancement with 5 V logic-level MCU outputs, eliminating level-shifter need.
E_AS	68 mJ - Withstands single-pulse inductive energy up to 11 A without failure, critical for motor stall protection.
t_r/t_f	74 ns / 29 ns - Supports >200 kHz switching in SMPS while limiting switching losses and EMI generation.
R_θJC	3.3 °C/W - Allows direct heatsink mounting to sustain 45 W dissipation at T_J ≤ 175°C in industrial environments.
Q_g	15 nC - Matches standard gate drivers (e.g., IR2110, UCC27531) with <1 µs turn-on time using 10 Ω gate resistor.

Pinout & Package

IRLZ24NSTRR is housed in a D2PAK (TO-262) surface-mount power package with exposed drain pad for thermal and electrical connection. The package measures 15.49 × 10.16 mm, supports PCB heatsinking, and complies with IPC-7351B footprint standards.

Pin/Terminal	Circuit Role	Design Meaning
1 – GATE	Control electrode	Receives logic-level voltage (2.5–16 V); requires <15 nC charge for full enhancement; sensitive to ESD.
2 – DRAIN	High-side power terminal	Connected to input rail or inductive load; electrically tied to exposed backside metal pad for thermal path.
3 – SOURCE	Power return and reference node	Provides low-inductance return path (L_S = 7.5 nH); serves as local ground for gate driver and sense circuitry.

Key Features

Feature	Design Value
Logic-level gate threshold	V_GS(th) = 1.0–2.0 V enables direct drive from 3.3 V/5 V MCUs without gate driver ICs.
Fully avalanche rated	Single-pulse E_AS = 68 mJ ensures robustness against inductive kickback in motor control and relay driving.
Low gate charge	Q_g = 15 nC and Q_gd = 8.5 nC reduce driver power loss and improve switching efficiency at >100 kHz.
High-temperature operation	Rated for continuous operation up to T_J = 175°C - suitable for sealed enclosures and automotive under-hood applications.
Optimized body diode	t_rr = 60–90 ns and Q_rr = 130–200 nC minimize reverse recovery loss in synchronous rectifiers.

Applications

Brushless DC Motor Drive

Industrial DC-DC Converter

Use Scenario: Half-bridge power stage in 24 V BLDC controller for HVAC blowers and pump modules.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (t_f = 29 ns) to minimize shoot-through risk during PWM commutation.

Use Value: R_DS(on) = 0.075 Ω @ 5 V gate drive reduces conduction loss by 35% vs. non-logic-level MOSFETs, improving system efficiency at partial load.

Use Scenario: Synchronous rectifier in isolated 48 V-to-12 V flyback converter for factory automation I/O modules.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; body diode conducts during dead-time, then MOSFET conducts during active period.

Use Value: Low Q_rr (130–200 nC) and fast t_rr (60–90 ns) suppress voltage spikes and reduce EMI, enabling smaller output filters.

LED Constant-Current Driver

Programmable Load Switch

Use Scenario: High-current dimming FET in 36 V LED streetlight driver with analog/PWM brightness control.

IC Role / Device Role / Timing Role: Series pass element modulating LED string current; operates in linear region during analog dimming.

Use Value: R_θJC = 3.3 °C/W and 175°C T_J(max) allow sustained 10 A linear operation with minimal heatsink volume in outdoor enclosures.

Use Scenario: Hot-swap and inrush current limiting for 24 V industrial PLC backplane power distribution.

IC Role / Device Role / Timing Role: High-side load switch controlled by microcontroller GPIO; integrated body diode blocks reverse current.

Use Value: V_GS(th) = 1.0–2.0 V ensures reliable turn-on with 3.3 V logic; 72 A pulsed rating handles capacitor charging surges without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 0.014 Ω @ 10 V (lower), but V_GS(th) = 1.0–2.5 V and Q_g = 55 nC (higher); TO-220 package.	Higher conduction efficiency but slower switching and larger footprint; unsuitable for space-constrained D2PAK layouts.	Select when lowest R_DS(on) dominates and thermal mass allows TO-220 mounting; avoid if gate drive current or board area is constrained.
IRFZ44NPBF	R_DS(on) = 0.028 Ω @ 10 V, but V_GS(th) = 2.0–4.0 V (non-logic-level); TO-220 package; no avalanche rating.	Requires ≥4.5 V gate drive; not rated for unclamped inductive switching - limits use in motor drives without external clamping.	Choose only for fixed 5 V/12 V gate drive systems where avalanche immunity is not required; verify gate voltage margin in worst-case conditions.

Compared with STP55NF06L and IRFZ44NPBF, IRLZ24NSTRR offers balanced trade-offs: lower Q_g than STP55NF06L for faster switching, tighter V_GS(th) tolerance than IRFZ44NPBF for reliable 3.3 V operation, and certified avalanche ruggedness absent in both alternatives - making it optimal for compact, high-reliability industrial power stages.

Availability

IRLZ24NSTRR is available at Aetrix Electronics and suitable for brushless DC motor drives, industrial DC-DC converters, and programmable load switches requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IRLZ24NSTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.

The IRLZ24NSTRR belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial, motor control, and power conversion applications where logic-level drive and thermal resilience are essential.

FAQ

What is the maximum continuous drain current for IRLZ24NSTRR at 100°C case temperature?

The maximum continuous drain current ID at TC = 100°C is 13 A with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be validated against actual PCB copper area, heatsinking, and ambient airflow in the target application.

Does IRLZ24NSTRR require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For typical 5 V MCU drive with 15 nC Qg, a 10 Ω resistor yields ~150 ns gate rise time and limits peak gate current to ~500 mA, balancing switching speed and EMI. Values between 5 Ω and 22 Ω are commonly used depending on layout parasitics.

Can IRLZ24NSTRR replace IRLZ24N in existing designs?

Yes - IRLZ24NSTRR is the tape-and-reel version of the same die and package as the through-hole IRLZ24N, with identical electrical specifications, thermal performance, and pinout. The "TRR" suffix denotes packaging format only; no redesign or validation is needed for drop-in replacement in D2PAK footprints.

Is the body diode of IRLZ24NSTRR suitable for synchronous rectification?

Yes - its body diode has t_rr = 60–90 ns and Q_rr = 130–200 nC at IF = 11 A, enabling efficient synchronous rectification in flyback and forward converters. However, for highest efficiency above 100 kHz, an external Schottky or GaN FET may further reduce recovery loss.

IRLZ24NSTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRLZ24NSTRR FAQ

1.How can I place an order for IRLZ24NSTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ24NSTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ24NSTRR reliable?

The price and inventory of IRLZ24NSTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ24NSTRR is usually 5 days.

3.What payment methods are accepted for IRLZ24NSTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ24NSTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ24NSTRR?

IRLZ24NSTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ24NSTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ24NSTRR?

For technical support, including IRLZ24NSTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ24NSTRR requirements.

6.How does Aetrix verify that IRLZ24NSTRR is sourced from the original manufacturer or authorized distributors?

All IRLZ24NSTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ24NSTRR meets industry standards.

7.What is the process for return or replacement of IRLZ24NSTRR?

All IRLZ24NSTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ24NSTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ24NSTRR part is unused and in its original packaging.

Return procedure for IRLZ24NSTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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