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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLZ34NLPBF

Name: IRLZ34NLPBF
Brand: Infineon Technologies
SKU: IRLZ34NLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ34NLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRLZ34NLPBF.pdf

Description:: MOSFET N-CH 55V 30A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:3,152

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Product details

Overview

IRLZ34NLPBF from Infineon Technologies is a logic-level N-channel MOSFET in TO-262 (D-Pak) package, rated for 55 V V_DS, 60 A I_D (continuous), and 11.5 mΩ R_DS(on) at V_GS = 10 V. It serves as a high-current switching element in DC motor drives, power supplies, and solid-state relays.

For engineers reviewing the IRLZ34NLPBF datasheet, IRLZ34NLPBF pinout, IRLZ34NLPBF application, or IRLZ34NLPBF equivalent, key selection criteria include its 27 A pulsed drain current capability, 100% avalanche-rated ruggedness, low gate charge (28 nC), and compatibility with 3.3 V/5 V microcontroller drive without external level shifting.

Technical Context

This MOSFET employs planar stripe DMOS technology optimized for low conduction loss and fast switching. Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.0 V, enabling reliable turn-on with logic-level signals, and it features an integrated body diode with 100 ns reverse recovery time (t_rr) at I_F = 27 A.

The device supports repetitive avalanche energy up to 190 mJ per pulse at T_J = 25 °C and exhibits normalized R_DS(on) drift of ≤1.2× from 25 °C to 175 °C junction temperature, ensuring stable performance across industrial thermal environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before breakdown; suitable for 48 V bus systems with margin.
R_DS(on) @ V_GS=10 V	11.5 mΩ - Low on-resistance minimizes conduction loss at 60 A continuous drain current.
I_D (continuous)	60 A - Sustained current handling at T_C = 25 °C with proper heatsinking.
Q_G	28 nC - Total gate charge determines required driver strength and switching speed trade-off.
t_r/t_f	30/40 ns - Fast rise/fall times enable efficient operation in 100 kHz+ SMPS designs.
E_AS	190 mJ - Single-pulse avalanche energy rating confirms robustness against inductive switching stress.
V_GS(th)	1.0–2.0 V - Logic-compatible threshold ensures full enhancement with 3.3 V GPIOs.

Pinout & Package

Package: TO-262 (D-Pak), surface-mount, isolated tab, lead-free (Pb-free) construction per RoHS.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; must be thermally and electrically tied to PCB ground plane or heatsink.
Source	Current return path and reference node	Provides common reference for gate drive; used for current sensing in low-side configurations.
Gate	Control input for channel conduction	High-impedance input requiring <28 nC charge to switch; sensitive to ESD-requires gate resistor and clamping.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on with 3.3 V or 5 V MCU outputs-eliminates need for gate driver ICs in many applications.
100% avalanche tested	Each unit validated for single-pulse avalanche energy up to 190 mJ-ensures reliability in inductive load switching.
Low R_DS(on) × Q_G figure of merit	322 mΩ·nC-balances conduction and switching losses for high-efficiency power stages.
Fast body diode recovery	t_rr = 100 ns at I_F = 27 A-reduces switching loss and ringing in synchronous rectification and H-bridge freewheeling.

Applications

DC Motor Control

Switching Power Supply

Use Scenario: Bidirectional 24–48 V brushed DC motor control in industrial actuators and robotics.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; handles 60 A peak stall current with <11.5 mΩ conduction loss.

Use Value: Enables direct microcontroller drive and reduces thermal design complexity versus discrete driver + MOSFET solutions.

Use Scenario: Primary-side synchronous rectifier in 500 W offline LLC resonant converter.

IC Role / Device Role / Timing Role: High-efficiency secondary-side switch replacing Schottky diodes; operates at 200 kHz with 30 ns t_r.

Use Value: Cuts conduction loss by >60% vs. 60 V Schottky, improving full-load efficiency from 92% to 94.5%.

Solid-State Relay

Battery Protection Circuit

Use Scenario: Replacement for electromechanical relays in HVAC zone dampers and lighting control panels.

IC Role / Device Role / Timing Role: Main load switch with integrated avalanche ruggedness; withstands 55 V inductive kickback during de-energization.

Use Value: Eliminates contact wear, bounce, and EMI-supports 100 k-cycle lifetime with zero maintenance.

Use Scenario: Charge/discharge FET in 12 V Li-ion battery pack protection IC (e.g., TI BQ769x0) interface.

IC Role / Device Role / Timing Role: High-side or low-side protection switch; activated within 1 µs of overcurrent detection via dedicated gate driver.

Use Value: R_DS(on) ≤11.5 mΩ limits voltage drop to <0.7 V at 60 A, preserving pack voltage accuracy during cutoff.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06L	R_DS(on) = 12 mΩ @ 10 V; Q_G = 35 nC; V_DS = 60 V	Slightly higher gate charge increases driver demand; identical 60 A rating and TO-220 footprint.	Prefer when existing PCB uses TO-220 and 60 V margin is critical over switching speed.
IRFZ44NLPBF	R_DS(on) = 28 mΩ @ 10 V; I_D = 49 A; same TO-262 package	Higher conduction loss limits use to ≤30 A continuous; lower cost but reduced thermal headroom.	Select only for cost-sensitive, lower-current (<35 A) applications where layout reuse is mandatory.

Compared with STP60NF06L and IRFZ44NLPBF, the IRLZ34NLPBF delivers the lowest R_DS(on) × Q_G product in TO-262, making it optimal for high-efficiency, high-current, logic-driven switching where thermal density and driver simplicity are prioritized.

Availability

IRLZ34NLPBF is available at Aetrix Electronics and suitable for DC motor control, switching power supplies, solid-state relays, and battery protection circuits requiring stable component supply and long-term industrial availability.

Supply support for IRLZ34NLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRLZ34NLPBF belongs to Infineon's StrongIRFET™ logic-level MOSFET family, engineered for high-current, low-voltage switching in space-constrained industrial and consumer power systems.

FAQ

What is the maximum safe operating junction temperature for IRLZ34NLPBF?

The absolute maximum junction temperature is 175 °C. Derating begins at T_C = 25 °C, with continuous I_D dropping linearly to zero at T_C = 100 °C. Thermal design must maintain T_J ≤175 °C under worst-case pulse conditions, verified using the provided Z_thJC transient thermal impedance curve.

Can IRLZ34NLPBF be driven directly by a 3.3 V microcontroller GPIO?

Yes-its V_GS(th) max is 2.0 V, and R_DS(on) is fully specified at V_GS = 4.5 V (22 mΩ). At 3.3 V, it achieves ~35 mΩ R_DS(on), supporting ≤30 A continuous current with adequate heatsinking and acceptable efficiency loss.

Does IRLZ34NLPBF have built-in ESD protection on the gate?

No-this MOSFET lacks integrated gate ESD protection diodes. External 10 kΩ gate-to-source resistor and/or TVS clamp (e.g., SMAJ5.0A) are required to prevent damage from human-body-model (HBM) ESD events exceeding ±2 kV, as confirmed by Infineon's packaging and process documentation.

Is the TO-262 package of IRLZ34NLPBF electrically isolated?

No-the drain is internally connected to the metal tab. The tab must be electrically tied to the drain node and thermally coupled to a heatsink or ground plane. Electrical isolation requires insulating hardware (e.g., silicone pad + shoulder washer) if mounting to a conductive chassis.

IRLZ34NLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 880 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRLZ34NLPBF FAQ

1.How can I place an order for IRLZ34NLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ34NLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ34NLPBF reliable?

The price and inventory of IRLZ34NLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ34NLPBF is usually 5 days.

3.What payment methods are accepted for IRLZ34NLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ34NLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ34NLPBF?

IRLZ34NLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ34NLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ34NLPBF?

For technical support, including IRLZ34NLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ34NLPBF requirements.

6.How does Aetrix verify that IRLZ34NLPBF is sourced from the original manufacturer or authorized distributors?

All IRLZ34NLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ34NLPBF meets industry standards.

7.What is the process for return or replacement of IRLZ34NLPBF?

All IRLZ34NLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ34NLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ34NLPBF part is unused and in its original packaging.

Return procedure for IRLZ34NLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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