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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLZ34NSPBF

Name: IRLZ34NSPBF
Brand: Infineon Technologies
SKU: IRLZ34NSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ34NSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRLZ34NSPBF.pdf

Description:: MOSFET N-CH 55V 30A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLZ34NSPBF from Infineon Technologies is a logic-level N-channel MOSFET in TO-262 (D-Pak) package, rated for 55 V V_DS, 30 A continuous drain current at T_C = 100°C, and 11 mΩ R_DS(on) at V_GS = 10 V. It serves as a high-efficiency power switch in DC-DC converters, motor drivers, and solid-state relays.

For engineers reviewing the IRLZ34NSPBF datasheet, IRLZ34NSPBF pinout, IRLZ34NSPBF application, or IRLZ34NSPBF equivalent, key selection criteria include its low gate threshold (V_GS(th) = 1.0–2.0 V), fast switching (t_d(on) = 13 ns, t_f = 20 ns), avalanche-rated ruggedness (E_AS = 125 mJ), and compatibility with 3.3 V/5 V microcontroller drive.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for low conduction loss and controlled switching behavior. Its gate charge profile (Q_G = 27 nC, Q_GD = 9.5 nC) supports efficient PWM operation up to 100 kHz in hard-switched topologies, while the body diode exhibits t_rr = 55 ns and Q_RR = 28 nC under V_DD = 25 V, I_F = 16 A conditions.

Thermal design is enabled by a junction-to-case thermal resistance of 1.2°C/W and SOA compliance up to 10 ms single-pulse at T_J = 175°C. The device is fully specified for operation across –55°C to +175°C junction temperature range with guaranteed R_DS(on) stability over temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage in power-switching applications without avalanche breakdown
R_DS(on) @ V_GS=10 V	11 mΩ - Enables ≤0.99 W conduction loss at 30 A, critical for thermally constrained PCB layouts
I_D (continuous, T_C=100°C)	30 A - Sustains full-load current in industrial motor control and UPS output stages
V_GS(th)	1.0–2.0 V - Directly drivable by 3.3 V GPIOs without level-shifting circuitry
Q_G	27 nC - Determines gate driver power requirement and switching transition time in SMPS
E_AS	125 mJ - Withstands repetitive inductive energy spikes in relay replacement and solenoid driving
t_r/t_f	12 ns / 20 ns - Minimizes switching losses and EMI generation in high-frequency inverters

Pinout & Package

IRLZ34NSPBF uses a 3-pin TO-262 (D-Pak) surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin assignment is standardized: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives logic-level voltage to modulate channel conductivity; requires <27 nC charge for full enhancement
Drain (D)	High-side power path	Connected to load supply rail; electrically tied to metal tab for low-inductance heat sinking
Source (S)	Reference node	Serves as return path for load current and gate drive reference; defines common potential for driver IC

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, eliminating need for gate driver ICs in MCU-based systems
Low R_DS(on)	11 mΩ at 10 V ensures <1 W conduction loss at 30 A, reducing heatsink requirements
Avalanche-rated	125 mJ single-pulse E_AS enables reliable operation in inductive switching without external snubbers
Fast body diode	55 ns reverse recovery time supports synchronous rectification and freewheeling in buck converters
Lead-free & RoHS compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for standard reflow assembly

Applications

Motor Control

DC-DC Conversion

Use Scenario: Brushed DC motor H-bridge half-bridge leg in battery-powered tools and robotics.

IC Role / Device Role / Timing Role: High-side or low-side power switch enabling bidirectional torque control via PWM.

Use Value: 11 mΩ R_DS(on) reduces I²R heating during 20–30 A stall currents, extending runtime and thermal margin.

Use Scenario: Primary-side synchronous rectifier in 12 V → 5 V/3.3 V non-isolated buck converter for embedded controllers.

IC Role / Device Role / Timing Role: Low-loss power switch replacing Schottky diode to improve efficiency above 2 A load.

Use Value: Logic-level gate enables direct drive from PWM controller's gate output, eliminating auxiliary bias circuitry.

Solid-State Relay

Power Distribution

Use Scenario: Replacement for electromechanical relays in PLC I/O modules handling 24 V DC loads up to 20 A.

IC Role / Device Role / Timing Role: Isolation-free load switch with integrated avalanche protection for inductive load turn-off.

Use Value: 125 mJ E_AS safely clamps L·di/dt energy from solenoids and contactors without external TVS.

Use Scenario: Hot-swap and load-switching circuit in server backplane power rails.

IC Role / Device Role / Timing Role: Controlled inrush limiter and fault-isolating switch for 12 V/48 V distribution networks.

Use Value: Fast 12 ns rise time and low gate charge enable precise timing of soft-start sequences using RC gate control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ @ 10 V; V_GS(th) = 2–4 V; higher gate charge (Q_G = 67 nC)	Requires stronger gate drive; less suitable for 3.3 V logic; better for cost-sensitive 5 V systems	Choose when gate drive voltage ≥5 V and thermal budget allows higher conduction loss
STP30NF20	V_DS = 200 V; R_DS(on) = 42 mΩ @ 10 V; not logic-level (V_GS(th) = 2–4 V)	Higher voltage rating but significantly higher on-resistance and drive requirement	Prefer only if system requires >100 V blocking capability and gate driver is available

Compared with IRFZ44NPBF and STP30NF20, IRLZ34NSPBF delivers superior efficiency at low gate voltages and lower switching losses due to its 27 nC Q_G and 11 mΩ R_DS(on), making it optimal for space-constrained, thermally sensitive 3.3 V/5 V control environments.

Availability

IRLZ34NSPBF is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, solid-state relay, and power distribution applications requiring stable component supply and long-term industrial availability.

Supply support for IRLZ34NSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The StrongIRFET™ product line, which includes IRLZ34NSPBF, is engineered for high-current, low-voltage switching in industrial automation, renewable energy inverters, and consumer power supplies.

FAQ

Is IRLZ34NSPBF suitable for 3.3 V microcontroller gate drive?

Yes. With a guaranteed V_GS(th) of 1.0–2.0 V and full enhancement at V_GS ≥ 4.5 V, IRLZ34NSPBF switches reliably using 3.3 V GPIO outputs. Its 27 nC total gate charge ensures minimal driver loading, and typical R_DS(on) remains ≤22 mΩ even at V_GS = 4.5 V per datasheet Figure 4.

What is the maximum safe operating area (SOA) for single-pulse operation?

At T_J = 25°C, IRLZ34NSPBF supports 30 A at 55 V for ≤10 µs, or 10 A at 55 V for ≤10 ms. Derating is required above 25°C: at T_J = 100°C, the 10 ms limit drops to ~12 A. SOA curves are provided in Figure 11 of the official Infineon datasheet Rev. D.

Does IRLZ34NSPBF have integrated ESD protection?

No. IRLZ34NSPBF does not include on-die ESD protection structures. Per Infineon's handling guidelines, gate-source voltage must be limited to ±20 V, and static discharge paths must be implemented externally-e.g., via 10 kΩ series gate resistor and 12 V Zener clamp-to prevent damage during PCB assembly or handling.

Can IRLZ34NSPBF replace IRLZ34N in existing designs?

Yes. IRLZ34NSPBF is the lead-free, RoHS-compliant version of IRLZ34N, sharing identical electrical specifications, pinout, thermal performance, and package dimensions. The "SPBF" suffix denotes green packaging (no Pb, no Br), with MSL1 rating and compatible reflow profiles per J-STD-020.

IRLZ34NSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 880 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRLZ34NSPBF FAQ

1.How can I place an order for IRLZ34NSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ34NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ34NSPBF reliable?

The price and inventory of IRLZ34NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ34NSPBF is usually 5 days.

3.What payment methods are accepted for IRLZ34NSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ34NSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ34NSPBF?

IRLZ34NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ34NSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ34NSPBF?

For technical support, including IRLZ34NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ34NSPBF requirements.

6.How does Aetrix verify that IRLZ34NSPBF is sourced from the original manufacturer or authorized distributors?

All IRLZ34NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ34NSPBF meets industry standards.

7.What is the process for return or replacement of IRLZ34NSPBF?

All IRLZ34NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ34NSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ34NSPBF part is unused and in its original packaging.

Return procedure for IRLZ34NSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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