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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLZ34NSTRR

Name: IRLZ34NSTRR
Brand: Infineon Technologies
SKU: IRLZ34NSTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ34NSTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRLZ34NSTRR.pdf

Description:: MOSFET N-CH 55V 30A D2PAK

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Inventory:9,750

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Product details

Overview

IRLZ34NSTRR from Infineon Technologies is a 55 V, 30 A, 0.04 Ω (typ) N-channel enhancement-mode MOSFET in TO-262 (D-Pak) package, optimized for low-voltage DC-DC conversion and motor control switching. It features logic-level gate drive (V_GS(th) = 1.0–2.0 V), 100% avalanche-rated operation, and R_DS(on) of 40 mΩ at V_GS = 10 V, enabling high-efficiency power switching in 12 V/24 V industrial motor drives.

For engineers reviewing the IRLZ34NSTRR datasheet, IRLZ34NSTRR pinout, IRLZ34NSTRR application, or IRLZ34NSTRR equivalent, key selection criteria include its 30 A continuous drain current rating, 55 V V_DSS, logic-compatible gate threshold, SOA-limited pulse capability, and TO-262 thermal performance under forced-air cooling.

Technical Context

This MOSFET employs planar vertical DMOS technology with optimized cell pitch and trench-assisted channel design to achieve low R_DS(on) while maintaining robust short-circuit withstand time (t_SC ≥ 10 µs at V_DD = 30 V). Its body diode exhibits 50 ns reverse recovery time (t_rr) and 1.3 V forward voltage (V_SD) at I_S = 30 A, supporting synchronous rectification in buck converters.

The device operates within a junction temperature range of –55 °C to +175 °C and supports gate drive voltages from 2.5 V to 15 V. Its transconductance (g_fs) is 18 S (min) at V_DS = 15 V, I_D = 16 A, ensuring stable gain across load conditions in linear-mode applications like hot-swap controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche breakdown; defines safe operating limit in 48 V nominal systems.
I_D (continuous)	30 A - Continuous drain current at T_C = 25 °C; derates to 19 A at T_C = 100 °C per SOA curve.
R_DS(on) (max)	50 mΩ at V_GS = 10 V - On-resistance directly determines conduction loss; 40 mΩ typical enables <1.2 W loss at 25 A.
V_GS(th)	1.0–2.0 V - Gate threshold compatible with 3.3 V and 5 V microcontrollers without level-shifting.
Q_g	35 nC - Total gate charge impacts switching speed and driver power; enables ~100 kHz PWM with 1 Ω gate resistor.
E_AS	120 mJ - Single-pulse avalanche energy rating ensures reliability during inductive turn-off transients in motor H-bridges.
t_r/t_f	20/30 ns - Rise/fall times define minimum controllable PWM duty cycle and EMI generation profile.

Pinout & Package

IRLZ34NSTRR is housed in a surface-mount TO-262 (D-Pak) package with exposed drain pad for enhanced thermal dissipation. The package measures 10.16 × 4.70 × 2.39 mm (0.400 × 0.185 × 0.094 in) and supports solder reflow per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current output terminal	Internally connected to exposed copper pad; must be thermally coupled to PCB ground plane for ≤ 1.5 °C/W θ_JC.
Gate (G)	Control input	High-impedance MOS gate requiring <100 pF Miller capacitance management; sensitive to ESD (HBM 2 kV).
Source (S)	Reference return path	Common node for gate drive reference and current sensing; layout must minimize L_GS to prevent oscillation.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V, eliminating need for dedicated gate drivers in 5 V MCU-based motor controllers.
100% avalanche tested	Each unit undergoes single-pulse avalanche stress test to 120 mJ, guaranteeing ruggedness in inductive load switching.
Low gate charge	Q_g = 35 nC reduces driver power loss and enables faster switching than comparable 30 A MOSFETs (e.g., IRFZ44N: Q_g = 67 nC).
Enhanced body diode	t_rr = 50 ns and Q_rr = 32 nC support efficient synchronous rectification in non-isolated DC-DC converters.

Applications

Brushless DC Motor Control

DC-DC Synchronous Buck Converter

Use Scenario: Half-bridge leg in 24 V BLDC inverter driving HVAC blowers or power tools.

IC Role / Device Role / Timing Role: Low-side switch handling 30 A peak phase current with 20 kHz PWM commutation.

Use Value: 40 mΩ R_DS(on) limits conduction loss to 0.9 W at 15 A RMS, reducing heatsink requirements by 35% vs. 60 mΩ alternatives.

Use Scenario: High-current synchronous rectifier in 12 V → 5 V/20 A point-of-load converter for industrial PLCs.

IC Role / Device Role / Timing Role: Bottom-side FET conducting >90% of switching cycle with 100 ns dead-time margin.

Use Value: 1.3 V V_SD and 50 ns t_rr cut body-diode conduction loss by 42% versus standard Schottky solutions.

Hot-Swap Controller

LED Constant-Current Driver

Use Scenario: Inrush current limiter in 48 V telecom shelf power distribution units.

IC Role / Device Role / Timing Role: Linear-mode pass element regulating startup surge with active thermal foldback.

Use Value: 175 °C T_J(max) and 1.5 Ω·cm² R_θJC enable 5 A continuous linear operation without external heatsink.

Use Scenario: Dimmable constant-current switch for high-brightness LED arrays in street lighting.

IC Role / Device Role / Timing Role: PWM-controlled current sink modulating 2–10 A LED strings at 1–5 kHz.

Use Value: 2.0 V max V_GS(th) ensures full enhancement at 3.3 V MCU GPIO, simplifying dimming interface design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ (typ) at V_GS = 10 V but V_GS(th) = 2.0–4.0 V; higher Q_g = 67 nC.	Requires 10 V gate drive for full enhancement; less suitable for 3.3 V MCU direct drive.	Prefer when gate drive voltage ≥10 V and lower on-resistance outweighs switching loss penalty.
STP30NF20	V_DSS = 200 V, R_DS(on) = 45 mΩ (typ), V_GS(th) = 2.0–4.0 V; larger TO-220 package.	Higher voltage rating adds cost and capacitance; unsuitable for low-voltage efficiency-critical designs.	Select only if system requires >100 V blocking capability or legacy TO-220 footprint compatibility.

Compared with IRFZ44NPBF and STP30NF20, IRLZ34NSTRR uniquely balances logic-level drivability, low R_DS(on), and D-Pak thermal performance-making it optimal for space-constrained 12–48 V motor and power supply designs where gate drive simplicity and conduction efficiency are co-prioritized.

Availability

IRLZ34NSTRR is available at Aetrix Electronics and suitable for brushless DC motor control, DC-DC synchronous buck conversion, and hot-swap current limiting requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRLZ34NSTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The IRLZ34N belongs to Infineon's StrongIRFET™ family-designed specifically for high-current, low-voltage switching in motor drives, UPS systems, and industrial power supplies where logic-level gate drive and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current for IRLZ34NSTRR at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 19 A, as defined by the Safe Operating Area (SOA) curve in the datasheet. This derating accounts for thermal resistance (θ_JC = 1.5 °C/W) and power dissipation limits under steady-state conduction.

Can IRLZ34NSTRR be driven directly by a 3.3 V microcontroller GPIO?

Yes-its V_GS(th) range of 1.0–2.0 V ensures full enhancement at 3.3 V, delivering R_DS(on) ≤ 50 mΩ. However, gate drive strength should be verified: 3.3 V GPIO with ≥10 mA sink/source capability is recommended to achieve <100 ns switching transitions.

Does IRLZ34NSTRR have integrated ESD protection on the gate?

No-IRLZ34NSTRR has no integrated gate ESD protection diodes. It is rated for 2 kV HBM ESD per JEDEC JESD22-A114, meaning external gate protection (e.g., 10 Ω series resistor + 12 V TVS) is required in handling and PCB layout to prevent damage during assembly or operation.

What is the typical reverse recovery time of the body diode in IRLZ34NSTRR?

The typical reverse recovery time (t_rr) is 50 ns at I_F = 30 A, T_J = 25 °C, and di/dt = 100 A/µs. This value is measured with V_R = 25 V and ensures minimal tail current during synchronous rectification, reducing switching losses in buck converters.

IRLZ34NSTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 880 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRLZ34NSTRR FAQ

1.How can I place an order for IRLZ34NSTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ34NSTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ34NSTRR reliable?

The price and inventory of IRLZ34NSTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ34NSTRR is usually 5 days.

3.What payment methods are accepted for IRLZ34NSTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ34NSTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ34NSTRR?

IRLZ34NSTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ34NSTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ34NSTRR?

For technical support, including IRLZ34NSTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ34NSTRR requirements.

6.How does Aetrix verify that IRLZ34NSTRR is sourced from the original manufacturer or authorized distributors?

All IRLZ34NSTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ34NSTRR meets industry standards.

7.What is the process for return or replacement of IRLZ34NSTRR?

All IRLZ34NSTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ34NSTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ34NSTRR part is unused and in its original packaging.

Return procedure for IRLZ34NSTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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