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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLZ44NSPBF

Name: IRLZ44NSPBF
Brand: Infineon Technologies
SKU: IRLZ44NSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ44NSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRLZ44NSPBF.pdf

Description:: MOSFET N-CH 55V 47A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLZ44NSPBF from Infineon Technologies is a 55 V, 49 A, 27 mΩ N-channel enhancement-mode MOSFET in TO-262 (D-Pak) package, optimized for low-voltage DC-DC conversion and high-efficiency motor control. It features logic-level gate drive (V_GS(th) = 2.0–3.0 V), 100% avalanche-rated operation, and R_DS(on) = 27 mΩ @ V_GS = 10 V at T_J = 25°C.

For engineers reviewing the IRLZ44NSPBF datasheet, IRLZ44NSPBF pinout, IRLZ44NSPBF application, or IRLZ44NSPBF equivalent, key selection criteria include its 49 A continuous drain current capability, 55 V V_DSS, logic-compatible gate threshold, TO-262 thermal performance, and single-pulse avalanche energy rating of 125 mJ - all critical for industrial motor drives and synchronous rectification designs.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized channel geometry to achieve low R_DS(on) while maintaining robust switching behavior. Its gate charge profile (Q_G = 58 nC, Q_GD = 22 nC @ V_GS = 10 V) supports fast turn-on/turn-off with minimal Miller-induced oscillation in hard-switched topologies.

The device is characterized for operation up to T_J = 175°C and exhibits normalized R_DS(on) drift ≤ 2.0× from 25°C to 175°C. Its body diode has t_rr = 55 ns and Q_RR = 42 nC @ I_F = 25 A, enabling reliable freewheeling in buck converters and H-bridge inverters without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V bus systems.
I_D (continuous)	49 A @ T_C = 25°C - Sustained load current capability with heatsink; derates to 25 A @ T_C = 100°C.
R_DS(on)	27 mΩ @ V_GS = 10 V, T_J = 25°C - Conduction loss of 66 W at 49 A; enables >95% efficiency in 12–24 V power stages.
V_GS(th)	2.0–3.0 V - Logic-level gate threshold compatible with 3.3 V and 5 V microcontrollers without level-shifting.
Q_G	58 nC @ V_GS = 10 V - Total gate charge determining driver strength requirement; supports 100 kHz+ PWM with <1 W gate drive loss.
E_AS	125 mJ (single pulse) - Avalanche energy rating confirming ruggedness against inductive switching transients in motor control.
t_r/t_f	25 ns / 45 ns @ R_G = 2.5 Ω - Fast switching transitions minimizing overlap loss in synchronous rectifiers.

Pinout & Package

IRLZ44NSPBF uses the TO-262 (D-Pak) surface-mount package with exposed drain pad for enhanced thermal conduction. The package measures 10.67 × 4.83 × 9.65 mm and is rated for 1.75 W/°C junction-to-case thermal resistance (R_θJC) when mounted on 1-in² 2-oz copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Internally connected to exposed metal tab; must be electrically tied to PCB ground plane or heatsink for thermal and electrical integrity.
Source	Reference node for gate drive and current return	Low-inductance connection point for shunt sensing and gate driver return; forms common reference for half-bridge high-side configuration.
Gate	Control input for channel conduction	High-impedance MOS gate requiring <1 µA bias; sensitive to ESD; requires RC snubber if driving inductive loads with fast dV/dt.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 3.3 V or 5 V MCU GPIOs - eliminates need for dedicated gate drivers in low-power motor controllers.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥ 125 mJ - ensures reliability in unclamped inductive switching events like solenoid de-energization.
Low gate charge	Q_G = 58 nC and Q_GD = 22 nC enable efficient 100–500 kHz operation with minimal driver power dissipation and reduced EMI.
Enhanced body diode	t_rr = 55 ns and Q_RR = 42 nC support clean commutation in synchronous rectification without cross-conduction risk.
Lead-free & RoHS compliant	Meets JEDEC J-STD-020 reflow profile; qualified for Pb-free assembly at peak 260°C - suitable for modern automated SMT production lines.

Applications

Brushless DC Motor Drive

DC-DC Synchronous Rectifier

Use Scenario: Three-phase inverter stage for 24–48 V BLDC fans and pumps in HVAC and industrial automation.

IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation; conducts during 120° intervals with 10–50 kHz PWM modulation.

Use Value: 27 mΩ R_DS(on) reduces conduction loss by 40% vs. legacy 40 mΩ MOSFETs, lowering thermal stress and enabling smaller heatsinks.

Use Scenario: Secondary-side synchronous rectification in isolated 12 V output buck-derived DC-DC converters for telecom power supplies.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven complementary to primary-side switch with dead-time control.

Use Value: Eliminates 0.4 V forward drop, improving efficiency by 2–3% at 20 A load and reducing secondary-side thermal footprint.

Industrial PLC Output Module

LED Constant-Current Driver

Use Scenario: Solid-state relay replacement in programmable logic controller digital output cards switching 24 V DC inductive loads.

IC Role / Device Role / Timing Role: Load switch with integrated flyback protection; handles 4 A steady-state and 10 A surge currents.

Use Value: Avalanche rating absorbs energy from solenoid coil collapse without external TVS, simplifying board layout and BOM count.

Use Scenario: High-brightness LED string driver in architectural lighting, supporting 350–700 mA constant current with PWM dimming.

IC Role / Device Role / Timing Role: Low-side current sink switch modulated at 1–20 kHz to regulate average LED current.

Use Value: Low V_GS(th) ensures full enhancement at 3.3 V MCU outputs, enabling direct microcontroller interface without buffer stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ @ 10 V; TO-220 package; no lead-free marking; slightly higher Q_G (61 nC)	Same electrical specs but through-hole mounting; less suitable for high-density SMT layouts	Select for prototyping or legacy through-hole designs where thermal mass of TO-220 is preferred.
STP55NF06L	R_DS(on) = 20 mΩ @ 10 V; V_DSS = 60 V; Q_G = 65 nC; TO-220FP package	Lower R_DS(on) improves conduction loss but higher gate charge increases driver demand	Choose when <20 mΩ R_DS(on) is required and gate drive capability supports 65 nC charge.

Compared with IRFZ44NPBF and STP55NF06L, IRLZ44NSPBF offers optimal balance of SMT compatibility, logic-level drive, and proven avalanche ruggedness - making it preferred for space-constrained industrial motor drives where reliability under transient overload is non-negotiable.

Availability

IRLZ44NSPBF is available at Aetrix Electronics and suitable for brushless DC motor drives, DC-DC synchronous rectifiers, industrial PLC output modules, and LED constant-current drivers requiring stable component supply across multi-year production cycles.

Supply support for IRLZ44NSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards aligned to AEC-Q101 and IEC 60747.

IRLZ44NSPBF belongs to Infineon's StrongIRFET™ family - engineered specifically for high-current, low-voltage switching applications demanding low R_DS(on), fast switching, and rugged avalanche performance in industrial and consumer power systems.

FAQ

What is the maximum continuous drain current for IRLZ44NSPBF at 100°C case temperature?

The maximum continuous drain current is 25 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated temperatures and assumes proper PCB copper area (≥1 in², 2 oz) for heatsinking.

Can IRLZ44NSPBF be driven directly from a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 3.0 V, and it achieves full enhancement (R_DS(on) ≤ 27 mΩ) at V_GS = 4.5 V. A 3.3 V GPIO will provide sufficient overdrive margin for reliable switching in low-frequency (<10 kHz) applications with moderate load currents.

Does IRLZ44NSPBF have an integrated body diode, and what are its recovery characteristics?

Yes - it features a monolithic parasitic body diode with reverse recovery time (t_rr) of 55 ns and recovered charge (Q_RR) of 42 nC at I_F = 25 A. These values are measured under standard conditions (V_DD = 25 V, di/dt = 100 A/µs) and support use in synchronous rectification without external diode supplementation.

Is IRLZ44NSPBF suitable for avalanche operation in inductive load switching?

Yes - it is 100% tested for single-pulse avalanche energy (E_AS) of 125 mJ at T_J = 25°C. This rating validates its ability to safely absorb inductive energy during unclamped turn-off events, such as solenoid or relay coil de-energization, without failure.

IRLZ44NSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRLZ44NSPBF FAQ

1.How can I place an order for IRLZ44NSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ44NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ44NSPBF reliable?

The price and inventory of IRLZ44NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ44NSPBF is usually 5 days.

3.What payment methods are accepted for IRLZ44NSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ44NSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ44NSPBF?

IRLZ44NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ44NSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ44NSPBF?

For technical support, including IRLZ44NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ44NSPBF requirements.

6.How does Aetrix verify that IRLZ44NSPBF is sourced from the original manufacturer or authorized distributors?

All IRLZ44NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ44NSPBF meets industry standards.

7.What is the process for return or replacement of IRLZ44NSPBF?

All IRLZ44NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ44NSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ44NSPBF part is unused and in its original packaging.

Return procedure for IRLZ44NSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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