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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLZ44NSTRR

Name: IRLZ44NSTRR
Brand: Infineon Technologies
SKU: IRLZ44NSTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ44NSTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRLZ44NSTRR.pdf

Description:: MOSFET N-CH 55V 47A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLZ44NSTRR from Infineon Technologies is a 55 V, 49 A, 27 mΩ N-channel enhancement-mode MOSFET in TO-262 (DPAK) package, optimized for low-voltage DC-DC conversion and motor control switching at 10 V gate drive. It delivers R_DS(on) = 27 mΩ @ V_GS = 10 V, Q_G = 38 nC, and operates up to T_J = 175 °C - used in high-efficiency synchronous buck converters and brushed DC motor H-bridge drivers.

For engineers reviewing the IRLZ44NSTRR datasheet, IRLZ44NSTRR pinout, IRLZ44NSTRR application, or IRLZ44NSTRR equivalent, key selection criteria include its 27 mΩ on-resistance at 10 V gate drive, 49 A continuous drain current rating, SOA-limited pulse capability, body diode reverse recovery performance, and TO-262 thermal profile under PCB-mounted conditions.

Technical Context

This logic-level MOSFET uses planar V-groove silicon technology with optimized channel geometry to achieve low R_DS(on) while maintaining robust avalanche energy rating (E_AS = 110 mJ). Its gate threshold voltage V_GS(th) ranges 1.0–2.0 V, enabling direct interface with 3.3 V and 5 V microcontrollers without level-shifting.

The device features an integrated body diode with t_rr = 60 ns and Q_rr = 32 nC at I_F = 25 A, V_DD = 25 V, and dI/dt = 100 A/µs - critical for freewheeling path integrity in inductive switching applications like solenoid drivers and power tool controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum blocking voltage before avalanche breakdown; defines safe operating range in 24 V and 48 V industrial bus systems.
R_DS(on) @ V_GS = 10 V	27 mΩ - conduction loss of 0.66 W at 5 A continuous drain current; enables high-efficiency operation below 100 kHz switching.
I_D (continuous)	49 A @ T_C = 25 °C - usable current limit with standard 2 oz copper PCB heatsinking; derates to ~28 A at T_C = 100 °C.
Q_G	38 nC - total gate charge determining driver strength requirement; supports 100 kHz PWM with ≤1 Ω gate resistor.
E_AS	110 mJ - single-pulse avalanche energy rating; allows safe operation during inductive turn-off transients without snubbers.
V_GS(th)	1.0–2.0 V - ensures full enhancement at 3.3 V logic levels; eliminates need for external gate bias in MCU-driven loads.
t_r/t_f	12/20 ns - fast switching transitions reduce overlap losses; enables efficient operation in hard-switched topologies.

Pinout & Package

IRLZ44NSTRR is housed in a TO-262 (DPAK) surface-mount package with exposed drain pad for thermal conduction. The package measures 10.16 × 4.57 × 2.39 mm (0.400 × 0.180 × 0.094 in) and requires solderable thermal pad connection to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal (connected to exposed pad)	Primary heat path to PCB; must be connected to large copper pour for thermal management below 1.5 °C/W junction-to-board.
Gate (G)	Control electrode for channel formation	High-impedance input requiring <100 pF layout; sensitive to ringing - needs local RC damping if driven by long traces.
Source (S)	Reference node for gate drive and current return	Must be low-inductance path to driver ground; shared source routing affects shoot-through immunity in half-bridge configurations.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at 3.3 V and 5 V MCU outputs - eliminates level shifters in battery-powered motor control.
Low R_DS(on) at 10 V	27 mΩ enables <0.7 W conduction loss at 5 A - reduces heatsink requirements in space-constrained 24 V industrial actuators.
Robust avalanche rating	110 mJ E_AS withstands unclamped inductive switching in relay drivers and solenoid valves without external protection.
Fast body diode recovery	t_rr = 60 ns and Q_rr = 32 nC minimize reverse recovery losses in synchronous rectification and bidirectional DC-DC stages.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 - suitable for standard reflow profiles without baking.

Applications

Brushed DC Motor Control

Synchronous Buck Converter

Use Scenario: Driving 24 V brushed motors in cordless power tools with PWM-based speed regulation.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration handling peak currents up to 40 A during stall conditions.

Use Value: 27 mΩ R_DS(on) limits conduction loss to <0.43 W at 40 A, reducing thermal stress during intermittent high-torque operation.

Use Scenario: High-efficiency 12 V → 5 V/3.3 V point-of-load converter in industrial PLC modules.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to improve light-load efficiency and reduce heat generation.

Use Value: Body diode Q_rr = 32 nC and t_rr = 60 ns enable clean commutation at 500 kHz, cutting diode conduction loss by >65% vs. discrete diode solution.

DC Power Distribution Switch

Solenoid & Relay Driver

Use Scenario: Hot-swap power switch for 48 V telecom backplane slots with inrush current limiting.

IC Role / Device Role / Timing Role: Main pass element controlled via gate resistor network to manage dV/dt during turn-on.

Use Value: Avalanche rating of 110 mJ absorbs energy from cable inductance during hot-plug events, eliminating need for TVS clamping.

Use Scenario: Driving 24 V DC solenoids in automated valve control systems with rapid on/off cycling.

IC Role / Device Role / Timing Role: Low-side switch managing 1.2 A steady-state coil current and 15 A turn-on surge.

Use Value: Fast 12 ns rise time and 20 ns fall time ensure precise timing control within 10 µs window, critical for closed-loop fluid flow regulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	Same die, through-hole TO-220 package; R_DS(on) = 28 mΩ @ 10 V; higher thermal resistance (R_θJC = 1.5 °C/W vs. 1.0 °C/W).	Preferred where manual assembly or prototyping on breadboard/perfboard is required.	Select when board-level rework or hand-soldering is needed; avoid in high-density SMT layouts.
STP55NF06L	60 V rating, R_DS(on) = 22 mΩ @ 10 V, but V_GS(th) = 1.0–2.5 V; slightly higher Q_G (42 nC).	Better conduction efficiency at same current, but marginally slower switching due to higher gate charge.	Choose for lower conduction loss priority over switching speed in <200 kHz applications.

Compared with IRLZ44NSTRR, IRFZ44NPBF trades thermal performance for assembly flexibility, while STP55NF06L improves R_DS(on) at the cost of increased gate drive demand - both require validation of SOA curves under identical PCB thermal conditions.

Availability

IRLZ44NSTRR is available at Aetrix Electronics and suitable for brushed DC motor control, synchronous buck conversion, DC power distribution switching, and solenoid/relay driver applications requiring stable component supply across industrial OEM production cycles.

Supply support for IRLZ44NSTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial MOSFETs, with global manufacturing and qualification standards aligned to AEC-Q101 and industrial reliability requirements.

The IRLZ series targets logic-level gate drive in industrial power switching - designed specifically for 3.3 V/5 V MCU interfacing in motor drives, power supplies, and solid-state relays without external level translation.

FAQ

What is the maximum continuous drain current for IRLZ44NSTRR at 100°C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 28 A. This value is derived from the device's thermal resistance (R_θJC = 1.0 °C/W) and maximum junction temperature (T_J(max) = 175 °C), assuming 10 V gate drive and adequate PCB copper area for heat dissipation.

Can IRLZ44NSTRR be used in a half-bridge configuration without external bootstrap components?

No - IRLZ44NSTRR is a single N-channel MOSFET and cannot self-drive its gate above the source potential in high-side position. For half-bridge use, it must be paired with a dedicated high-side gate driver IC (e.g., IRS21844) or used exclusively in low-side switching roles.

Does IRLZ44NSTRR have built-in ESD protection on the gate terminal?

Yes - the device incorporates gate oxide protection structures rated to ±2 kV HBM per JEDEC JS-001. However, this does not replace proper PCB-level ESD safeguards such as series gate resistors and TVS diodes in high-noise industrial environments.

How does the body diode forward voltage compare to discrete Schottky diodes in synchronous rectification?

The body diode V_SD is 1.3 V at 25 A, significantly higher than typical Schottky diodes (0.4–0.6 V). Its value is only relevant during dead-time conduction; in synchronous mode, the channel conducts instead - so V_SD matters only for transient behavior, not steady-state efficiency.

IRLZ44NSTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRLZ44NSTRR FAQ

1.How can I place an order for IRLZ44NSTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ44NSTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ44NSTRR reliable?

The price and inventory of IRLZ44NSTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ44NSTRR is usually 5 days.

3.What payment methods are accepted for IRLZ44NSTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ44NSTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ44NSTRR?

IRLZ44NSTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ44NSTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ44NSTRR?

For technical support, including IRLZ44NSTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ44NSTRR requirements.

6.How does Aetrix verify that IRLZ44NSTRR is sourced from the original manufacturer or authorized distributors?

All IRLZ44NSTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ44NSTRR meets industry standards.

7.What is the process for return or replacement of IRLZ44NSTRR?

All IRLZ44NSTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ44NSTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ44NSTRR part is unused and in its original packaging.

Return procedure for IRLZ44NSTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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